S8050-TO-92 [HDSEMI]
TO-92 Plastic-Encapsulate Transistors;
| 型号： | S8050-TO-92 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | TO-92 Plastic-Encapsulate Transistors |
| 文件： | 总4页 (文件大小：2666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S8050
HD-TO0.35
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
TO- 9 2
●
Complimentary to S8550
Collector current: I =0.5A
●
C
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
40
Unit
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
5
Collector Current
0.5
A
E B C
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
625
mW
℃/W
℃
PC
RΘJA
Tj
416
150
Storage Temperature
Tstg
-55～+150
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE= 100μA, IC=0
VCB= 40 V , IE=0
VCE= 20 V , IB=0
VEB= 5V, IC=0
V
V
0.1
0.1
0.1
400
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
VCE= 1V, IC= 50mA
VCE= 1V, IC= 500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
85
50
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.6
1.2
V
V
VCE= 6V, IC=20mA
f =30MHz
Transition frequency
fT
150
MHz
CLASSIFICATION OF hFE
Rank
B
C
D
D3
300-400
Range
85-160
120-200
160-300
1
H
igh Diode Semiconductor
Typical Characteristics
Static Characteristic
hFE —— IC
1000
100
10
100
80
60
40
20
0
COMMON EMITTER
VCE=1V
COMMON
EMITTER
480uA
420uA
Ta=25℃
Ta=100℃
360uA
300uA
240uA
Ta=25℃
180uA
120uA
IB=60uA
3
500
1
10
30
100
0
4
8
12
16
20
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC
VBEsat ——
VCEsat —— IC
500
300
2000
1000
Ta=25℃
100
Ta=100℃
Ta=100℃
Ta=25℃
30
10
β=10
β=10
100
30
500
3
1
3
10
30
100
1
10
100
500
100
150
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
fT —— IC
IC —— VBE
1000
100
COMMON EMITTER
VCE=1V
COMMON EMITTER
VCE=6V
Ta=25
℃
30
10
300
100
Ta=100℃
3
1
Ta=25℃
0.3
0.1
10
2
0.0
0.2
0.4
0.6
0.8
1.0
10
30
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (V)
VCB/ VEB
Cob/ Cib ——
PC —— Ta
750
625
500
375
250
125
0
100
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
30
10
Cob
3
1
0.1
0.3
1
3
10
20
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE Ta
(℃)
2
H
igh Diode Semiconductor
TO- 9 2
Package Outline Dimensions
SYMBOL
MIN
4.1
MAX
4.3
SYMBOL
MIN
0.36
MAX
0.56
1.45
12.5
1.3
A
B
C
D
E
F
G
H
I
K
L
R2.0
R2.2
1.35
4.1
M
N
O
P
12.00
1.24
1.1
3.13
Φ1.48
4.4
1.2
3.33
Φ1.52
4.6
5°
5°
Q
0.37
0.39
2.2
2.3
0.36
0.5
0.56
0.6
J
单位：mm
TO- 9 2
Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
TO-92 7DSHꢀDQGꢀ5HHO
mm
Nom
Inches
Nom
Symbol
Min
4.1
Max
4.3
Min
Max
0.180
0.192
0.139
0.022
—
A1
A
4.2
4.5
0.171
0.184
0.131
0.015
0.098
0.488
0.492
0.238
0.176
0.188
0.134
0.018
—
4.4
4.6
T
3.13
0.36
2.5
3.23
0.45
—
3.33
0.56
—
□d
L1
P
12.4
12.5
6.05
2.75
2.75
—
—
13
—
0.512
0.508
0.262
P0
12.7
6.35
3.00
3.00
—
12.9
6.65
3.25
3.25
0.4
0.5
P2
0.25
F1,F2
F3,F4
︱
︱
F1-F2
Box
Box Size(mm)
Carton
20000PCS
Carton Size(mm)
Packge
TO-92
2000PCS
343×158×42
470×358×180
4
H
igh Diode Semiconductor
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