S8050C-G [WEITRON]
Transistor;
| 型号： | S8050C-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor 晶体 小信号双极晶体管 光电二极管 |
| 文件： | 总4页 (文件大小：2061K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S8050
NPN General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
Unit
Vdc
Vdc
Vdc
mAdc
Value
25
40
5.0
500
V
CEO
V
V
CBO
EBO
I
C
P
D
0.625
150
Total Device Dissipation T =25 C
W
C
A
Junction Temperature
Storage, Temperature
T
j
Tstg
C
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = 0.1 mAdc, I =0)
V
25
Vdc
C
B
(BR)CEO
-
-
40
Vdc
Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)
V
V
C
E
(BR)CBO
Vdc
5.0
Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)
(BR)EBO
E
C
uAdc
I
I
CE0
0.1
0.1
0.1
Collector Cutoff Current (V = 20 Vdc, I =0)
-
-
CE
B
uAdc
uAdc
Collector Cutoff Current (V = 40 Vdc, I =0)
CB
CBO
EBO
E
-
I
d
Emitter Cutoff Current (V = 3.0V c, I =0)
EB
C
WEITRON
http://www.weitron.com.tw
S8050
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Max
Characteristics
Symbol
Min
TYP
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 50 Adc,V
-
-
-
-
(1)
(2)
h
85
50
-
300
-
FE
)
CE=1.0 Vdc
C
DC Current Gain
h
FE
(I = 500 mAdc,V = 1.0 Vdc)
CE
C
Collector-Emitter Saturation Voltage
(I = 500 Adc, I = 50 mAdc)
-
-
V
0.6
1.2
Vdc
Vdc
CE(sat)
C
B
Base-Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
-
V
BE(sat)
C
B
Current-Gain-Bandwidth Product
(I = 20 mAdc,V =6.0 Vdc, f=30MHz)
150
-
f
T
-
MHz
C
CE
Classification of h
FE(1)
B
D
Rank
C
Range
120-200
160-300
85-160
WEITRON
http://www.weitron.com.tw
S8050
WEITRON
http://www.weitron.com.tw
S8050
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
-
C
E
G
H
J
4.70
J
1.270TYP
K
K
L
2.44
14.10
2.64
14.50
G
WEITRON
http://www.weitron.com.tw
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