HA13152 [HITACHI]
14 W X 4-Channel BTL Power IC; 14瓦×4通道BTL电源IC
| 型号： | HA13152 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | 14 W X 4-Channel BTL Power IC |
| 文件： | 总24页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA13151, HA13152
14 W ´ 4-Channel BTL Power IC
ADE-207-116
1st. Edition
Description
The HA13151/HA13152 are high output and low distortion 4 ch BTL power IC designed for digital car
audio.
At 13.2 V to 4 Wload, this power IC provides output power 14 W with 10% distortion.
Functions
·
·
·
·
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Features
·
·
·
·
Few external parts lead to compact set-area possibility
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
HA13151, HA13152
Block Diagram
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Remarks
2
HA13151, HA13152
Operating supply voltage
Supply voltage when no signal*1
Peak supply voltage*2
Output current*3
VCC
18
V
VCC (DC)
VCC (PEAK)
IO (PEAK)
PT
26
V
50
V
3
A
Power dissipation*4
83
W
°C
°C
°C
Junction temperature
Operating temperature
Storage temperature
Tj
150
Topr
–30 to +85
–55 to +125
Tstg
Notes: 1. Tolerance within 30 seconds
2. Tolerance in surge pulse waveform
3. Value per 1 channel
4. Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.
3
HA13151, HA13152
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 W, Rg = 600 W, Ta =
25°C)
HA13151
Item
Symbol
IQ1
Min
—
Typ
270
0
Max
—
Unit
mA
mV
dB
Test Conditions
Quiescent current
Output offset voltage
Gain
Vin = 0
DVQ
GV
–300
30.5
–1.5
+300
33.5
+1.5
32
0
Gain difference between
channels
DGV
dB
Rated output power
Po
—
—
14
22
—
—
W
W
VCC = 13.2 V
THD = 10%, RL = 4 W
Max output power
Pomax
VCC = 13.7 V
THD = Max, RL = 4 W
Total harmonic distortion
Output noise voltage
T.H.D.
WBN
—
—
0.05
0.15
—
—
%
Po = 3 W
mVrms
Rg = 0 W
BW = 20 to 20 kHz
Ripple rejection
SVR
C.T.
—
—
55
70
—
—
dB
dB
Rg = 600 W, f = 120 Hz
Channel cross talk
Rg = 600 W
Vout = 0 dBm
Input impedance
Standby current
Rin
IQ2
—
25
—
—
—
kW
µA
V
—
200
VCC
Standby control voltage
(high)
VSTH
3.5
Standby control voltage
(low)
VSTL
VMH
0
—
—
—
70
1.5
VCC
1.5
—
V
Muting control voltage
(high)
3.5
0
V
Muting control voltage
(low)
VML
V
Muting attenuation
ATTM
—
dB
Vout = 0 dBm
4
HA13151, HA13152
HA13152
Item
Symbol
IQ1
Min
—
Typ
270
0
Max
—
Unit
Test Conditions
Quiescent current
Output offset voltage
Gain
mA
mV
dB
Vin = 0
DVQ
GV
–300
38.5
–1.5
+300
41.5
+1.5
40
0
Gain difference between
channels
DGV
dB
Rated output power
Po
—
—
14
22
—
—
W
W
VCC = 13.2 V
THD = 10%, RL = 4 W
Max output power
Pomax
VCC = 13.7 V
THD = Max, RL = 4 W
Total harmonic distortion
Output noise voltage
T.H.D.
WBN
—
—
0.05
0.25
—
—
%
Po = 3%
mVrms
Rg = 0 W
BW = 20 to 20 kHz
Ripple rejection
SVR
C.T.
—
—
45
60
—
—
dB
dB
Rg = 600 W, f = 120 Hz
Channel cross talk
Rg = 600 W
Vout = 0 dBm
Input impedance
Standby current
Rin
IQ2
—
25
—
—
—
kW
µA
V
—
200
VCC
Standby control voltage
(high)
VSTH
3.5
Standby control voltage
(low)
VSTL
VMH
0
—
—
—
60
1.5
VCC
1.5
—
V
Muting control voltage
(high)
3.5
0
V
Muting control voltage
(low)
VML
V
Muting attenuation
ATTM
—
dB
Vout = 0 dBm
5
HA13151, HA13152
Pin Explanation
Pin
Input
DC
No.
Symbol
Functions
Impedance
Voltage
Equivalence Circuit
1
IN1
CH1 INPUT
25 kW(Typ)
0 V
11
13
23
2
IN2
CH2 INPUT
CH3 INPUT
CH4 INPUT
Standby control
IN3
IN4
STBY
90 kW
—
(at Trs. cutoff)
3
OUT1 +
CH1 OUTPUT
—
VCC/2
5
OUT1 –
OUT2 +
OUT2 –
OUT3 +
OUT3 –
OUT4 +
OUT4 –
MUTE
7
CH2 OUTPUT
CH3 OUTPUT
CH4 OUTPUT
Muting control
9
15
17
19
21
10
25 kW(Typ)
—
6
HA13151, HA13152
Pin Explanation (cont)
Pin
Input
DC
No.
Symbol
Functions
Impedance
Voltage
Equivalence Circuit
22
RIPPLE
Bias stability
—
VCC/2
6
PVCC1
PVCC2
INVCC
Power of output stage
Power of input stage
—
VCC
—
18
14
4
—
—
VCC
—
—
—
CH1 GND CH1 power GND
CH2 GND CH2 power GND
CH3 GND CH3 power GND
CH4 GND CH4 power GND
8
16
20
12
IN GND
Input signal GND
—
—
—
7
HA13151, HA13152
Point of Application Board Design
1. Notes on Application Board’s Pattern Design
·
·
·
·
For increasing stability, the connected line of VCC and OUTGND is better to be made wider and
lower impedance.
For increasing stability, it is better to place the capacitor between VCC and GND (0.1 µF) close to
IC.
For increasing stability, it is better to place C1 to C8 and R1 to R8, which are for stopping
oscillation, close to IC.
It is better to place the grounding of resistor (Rg), between input line and ground, close to INGND
(Pin 12) because if OUTGND is connected to the line between Rg and INGND, THD will become
worse due to current from OUTGND.
Figure 1 Notes on Application Board’s Pattern Design
8
HA13151, HA13152
2. How to Reduce the Popping Noise by Muting Circuit
At normal operating circuit, Muting circuit operates at high speed under 1 µs.
In case popping noise becomes a problem, it is possible to reduce the popping noise by connecting
capacitor, which determines the switching time constant, between pin 10 and GND. (Following
figure 2)
We recommend value of capacitor greater then 1 µF.
Also transitional popping noise can be reduced sharply by muting before VCC and Standby are
ON/OFF.
Figure 2 How to use Muting Circuit
Table 1
Muting ON/OFF Time
C (µF)
nothing
0.47
ON Time
OFF Time
under 1 µs
2 ms
under 1 µs
2 ms
4.7
19 ms
19 ms
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HA13151, HA13152
10
HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
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HA13151, HA13152
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
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