HSB278S [HITACHI]
Silicon Schottky Barrier Diode for High Speed Switching; 硅肖特基二极管，高速开关
| 型号： | HSB278S |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Schottky Barrier Diode for High Speed Switching |
| 文件： | 总5页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSB278S
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-1383 (Z)
Rev.0
Mar. 2001
Features
•
•
Low forward voltage, Low capacitance.
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSB278S
S2
CMPAK
Outline
3
1
2
(Top View)
1
Cathode 2
2
3
Anode 1
Cathode 1
Anode 2
HSB278S
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VRRM
Value
Unit
V
Repetitive peak reverse voltage
Reverse voltage
30
VR
30
V
Non-Repetitive peak forward surge current
Peak forward current
Average rectified current
Junction temperature
Storage temperature
I
FSM *1 *2
200
mA
mA
mA
°C
°C
2
IFM
IO *2
*
150
30
Tj
125
Tstg
−55 to +125
Notes: 1. 10 msec sine wave 1 pulse
2. Per one device.
Electrical Characteristics (Ta = 25°C) *1
Item
Symbol Min
Typ Max Unit Test Condition
Forward voltage
VF1
VF2
IR
—
—
—
—
—
—
0.30
0.95
700
V
IF = 1 mA
—
IF = 30 mA
Reverse current
Capacitance
ESD-Capability *1
—
nA
VR = 10 V
C
—
1.50 pF
VR = 1 V, f = 1 MHz
—
100
—
V
C = 200 pF, RL = 0 Ω, Both forward and
reverse direction 1 pulse.
Notes: 1. Per one device.
2. Failure criterion ; IR > 1.4 µA at VR = 10 V
2
HSB278S
Main Characteristic
101
100
10−4
10−5
10−6
10−7
10−8
10−1
Ta = 75°C
Ta = 25°C
10−2
Ta = 75°C
10−3
Ta = 25°C
10−4
10−5
10−6
10−7
10−8
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
10
1.0
0.1
0.1
10
1.0
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
3
HSB278S
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
(0.65) (0.65)
1.3 ± 0.2
Hitachi Code
JEDEC
CMPAK
—
EIAJ
Conforms
0.006 g
Mass (reference value)
4
HSB278S
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
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For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Whitebrook Park
Hitachi Europe Ltd.
Electronic Components Group.
Hitachi Asia Ltd.
Hitachi Tower
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Singapore 049318
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Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
Lower Cookham Road
World Finance Centre,
Tel: <1> (408) 433-1990 Maidenhead
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Tel: <44> (1628) 585000
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 3.0
5
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