HVD144 [HITACHI]
Pin Diode, 30V V(BR), Silicon, SFP, 2 PIN;型号: | HVD144 |
厂家: | HITACHI SEMICONDUCTOR |
描述: | Pin Diode, 30V V(BR), Silicon, SFP, 2 PIN 开关 测试 光电二极管 |
文件: | 总6页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVD144
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-1413 (Z)
Rev.0
Sep. 2001
Features
•
•
•
•
Adopting the trench structure improves low capacitance.(C = 0.45 pF max)
Low forward resistance. (rf = 2.0 Ω max)
Low operation current.
Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVD144
T4
SFP
Outline
Cathode mark
Mark
1
2
T4
1. Cathode
2. Anode
HVD144
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
30
Unit
V
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
VR
IF
100
mA
mW
°C
Pd
Tj
150
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Reverse current
Forward voltage
Capacitance
IR
—
—
—
—
—
—
100
0.9
nA
V
VR = 30 V
VF
C
—
IF = 2 mA
—
0.45 pF
VR = 1 V, f = 1 MHz
Forward resistance rf
ESD-Capability *1
—
2.0
—
Ω
IF = 2 mA, f = 100 MHz
—
100
V
C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse.
Notes : 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Sep. 2001, page 2 of 6
HVD144
Main Characteristic
10-2
10-8
10-9
10-10
10-11
10-4
10-6
10-8
Ta = 75 C
Ta = 50 C
Ta = 75 C
Ta = 50 C
Ta = 25 C
Ta = 25 C
10-12
10-13
10-10
10-12
10-14
0
0.2
0.4
0.6
0.8
1.0
0
10
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
20
30
40
50
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
f = 1MHz
f = 100MHz
101
10
100
1.0
0.1
10-1
10-4
10-3
Forward current IF (A)
10-2
10-1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Fig.4 Forward resistance vs. Forward current
Rev.0, Sep. 2001, page 3 of 6
HVD144
106
105
104
103
102
101
100
10-1
f=100MHz
0
0.2
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) vs. Forward voltage
0.4
0.6
0.8
Rev.0, Sep. 2001, page 4 of 6
HVD144
Package Dimensions
As of January, 2001
Unit: mm
1.0 0.10
1.4 0.10
Hitachi Code
JEDEC
SFP
—
EIAJ
—
Mass (reference value)
0.0010 g
Rev.0, Sep. 2001, page 5 of 6
HVD144
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Sep. 2001, page 6 of 6
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