HVD147 [RENESAS]

Silicon Epitaxial Trench Pin Diode for Antenna Switching; 硅外延海沟PIN二极管的天线切换
HVD147
型号: HVD147
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Trench Pin Diode for Antenna Switching
硅外延海沟PIN二极管的天线切换

二极管
文件: 总5页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVD147  
Silicon Epitaxial Trench Pin Diode for Antenna Switching  
REJ03G0392-0200  
Rev.2.00  
Oct 20, 2004  
Features  
Adopting the trench structure improves low capacitance.(C = 0.31 pF max)  
Low forward resistance. (rf = 1.5 max)  
Low operation current.  
Super small Flat Package (SFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
SFP  
HVD147  
L1  
Pin Arrangement  
Cathode mark  
Mark  
1
2
L1  
1. Cathode  
2. Anode  
Rev.2.00 Oct 20, 2004 page 1 of 4  
HVD147  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Symbol  
Value  
30  
Reverse voltage  
VR  
IF  
V
mA  
mW  
°C  
Forward current  
100  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
Item  
Symbol  
IR  
Min  
Typ  
Max  
100  
1.00  
0.31  
Unit  
Reverse current  
Forward voltage  
Capacitance  
nA  
V
VR = 30 V  
IF = 10 mA  
VF  
C
rf  
pF  
VR = 1 V, f = 1 MHz  
Forward resistance  
2.5  
IF = 2 mA, f = 100 MHz  
IF = 10 mA, f = 100 MHz  
1.5  
ESD-Capability *1  
100  
V
C = 200 pF, R = 0 , Both forward  
and reverse direction 1 pulse.  
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V  
2. Please do not use the soldering iron due to avoid high stress to the SFP package.  
Rev.2.00 Oct 20, 2004 page 2 of 4  
HVD147  
Main Characteristic  
10-2  
10-8  
Ta = 75°C  
10-9  
10-10  
10-11  
10-4  
10-6  
10-8  
Ta = 25°C  
10-12  
10-10  
10-13  
10-12  
10-14  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
10  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
20  
30  
40  
50  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
f = 1MHz  
f = 100MHz  
100  
10  
1.0  
10  
1.0  
0.1  
0.1  
0
2
4
6
8
10  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Forward current IF (mA)  
Fig.4 Forward resistance vs. Forward current  
Rev.2.00 Oct 20, 2004 page 3 of 4  
HVD147  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.0 ± 0.10  
1.4 ± 0.10  
Package Code  
JEDEC  
SFP  
JEITA  
Mass (reference value)  
0.0010 g  
Rev.2.00 Oct 20, 2004 page 4 of 4  
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
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