HMC-VVD102 [HITTITE]
GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz; 砷化镓MMIC PIN可变电压衰减器， 17 - 27 GHz的
| 型号： | HMC-VVD102 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz |
| 文件： | 总6页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
Typical Applications
Features
Low Insertion Loss: 1.5 dB
Wide Dynamic Range: 18 dB
High Input IP3: +17 dBm
This HMC-VVD102 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military Radios, Radar & ECM
• Test Equipment & Sensors
• Space
Analog Control Voltage: -4 to +4V
Die Size: 1.01 x 1.175 x 0.1 mm
General Description
Functional Diagram
The HMC-VVD102 is a monolithic GaAs PIN diode
based Voltage Variable Attenuator (VVA) which
exhibits low insertion loss, high IP3 and wide dynamic
range. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. This wideband
MMIC VVA is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes
Electrical Specifications*, TA = +25 °C, 50 Ohm System
Parameter
Min.
Typ.
17 - 27
1.5
Max.
2
Units
GHz
dB
Frequency Range
Insertion Loss
Attenuation Range
18
dB
Return Loss (Min. Attenuation)
Return Loss (Max. Attenuation)
Input IP3
12
dB
15
dB
17
dBm
dBc
IM3 @ Pin = 0 dBm / Tone
30
*Unless otherwise indicated, all measurements are from probed die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 28
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
Maximum Attenuation vs. Frequency
Minimum Attenuation vs. Frequency
0
-19
-20
-21
-22
-23
-24
-25
-1
-2
-3
-4
13
15
17
19
21
23
25
27
13
15
17
19
21
23
25
27
FREQUENCY (GHz)
FREQUENCY (GHz)
Input & Output Return Loss vs.
Input & Output Return Loss vs.
Frequency @ Minimum Attenuation
Frequency @ Maximum Attenuation
0
0
INPUT (dB)
OUTPUT (dB)
INPUT (dB)
OUTPUT (dB)
-3
-6
-5
-10
-15
-20
-25
-9
-12
-15
-18
13
15
17
19
21
23
25
27
13
15
17
19
21
23
25
27
FREQUENCY (GHz)
FREQUENCY (GHz)
IM3 vs. Vdd2 (Vdd1= 4V) @ 17.5 GHz
IM3 vs. Frequency (0 dBm Tones)
(0 dBm Tones)
70
80
70
60
60
50
40
30
20
50
40
30
20
Vdd1 = 4V Vdd2 = 0.5V (Best Case)
Vdd1 = 4V Vdd2 = 0.5V (Worst Case)
-4
-2
0
2
4
17
19
21
23
25
27
VD2 (V)
FREQUENCY (GHz)
Note: Measured Performance Characteristics (Typical Performance at 25°C) Two-Tone measurement @ 0 dBm / tone
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 29
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
Absolute Maximum Ratings
Control Voltage Range (Vdd)
-6 to +6 Vdc
-65 to +150 °C
-55 to +85 °C
20 mA
Storage Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Operating Temperature
Total Bias Current (Idd)
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE .002”
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 30
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC blocked
and matched to 50 Ohms.
1
RFIN
2, 3
Vdd1, Vdd2
Control Input
This pad is DC blocked
and matched to 50 Ohms.
4
RFOUT
GND
Die Bottom
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 31
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Assembly Diagram
1
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the attenuator.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 32
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
1
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bond
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 33
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