HMC314_10 [HITTITE]

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz; 砷化镓的InGaP HBT MMIC驱动放大器0.7 - 4.0 GHz的
HMC314_10
型号: HMC314_10
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz
砷化镓的InGaP HBT MMIC驱动放大器0.7 - 4.0 GHz的

放大器 驱动
文件: 总6页 (文件大小:188K)
中文:  中文翻译
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HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
Typical Applications  
Ideal Broadband Gain Stage for:  
• 2.2 - 2.7 GHz MMDS  
Features  
P1dB Output Power: +18 dBm  
Output IP3: +29 dBm  
Gain: 12 dB  
• 3.5 GHz Wireless Local Loop  
• Low Profile Portable Wireless Devices  
• WLAN Systems  
Single Supply: 5V  
Ultra Small Package: SOT26  
Functional Diagram  
General Description  
The HMC314 is a GaAs InGaP Heterojunction  
Bipolar Transistor (HBT) MMIC amplifier that oper-  
ates from a single positive supply. This amplifier  
also incorporates a power down feature. When  
the “Vpd” pin is held low, the amplifier will shut  
down. The surface mount SOT26 amplifier can be  
used as a broadband gain stage for wideband  
applications. The amplifier provides 12 dB of gain  
and +22 dBm of saturated power while operating  
from a single positive +5v supply. The HMC314 is  
packaged in an ultra small SOT26 package at a  
height of only 1.45mm.  
Electrical Specifications, TA = +25° C  
Vs = +5V, Rbias = 10 Ohm  
Units  
Parameter  
Min.  
7
Typ.  
0.7 - 4.0  
12  
Max.  
Frequency Range  
GHz  
dB  
Gain  
16  
Gain Variation Over Temperature  
Input Return Loss  
0.015  
12  
0.025  
dB/°C  
dB  
6
Output Return Loss  
2
6
dB  
Reverse Isolation  
22  
15  
19  
26  
30  
dB  
Output Power for 1 dB Compression (P1dB) @ 1 GHz  
Saturated Output Power (Psat) @ 1 GHz  
Output Third Order Intercept (IP3) @ 1 GHz  
18  
dBm  
dBm  
dBm  
ns  
22  
29  
Switching Speed  
On/Off  
60  
Supply Current (Icc)  
Control Voltage (Vpd)  
Control Current (Ipd)  
150  
0/5  
mA  
Volts  
mA  
.001/12  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 1  
HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
Gain & Return Loss  
Gain vs. Temperature  
20  
15  
10  
5
20  
15  
0
10  
-5  
-10  
-15  
-20  
-25  
S11  
S21  
S22  
+ 25 C  
5
+ 65 C  
- 40 C  
0
0.5  
0
1
2
3
4
5
6
7
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
-5  
-10  
-15  
-20  
-25  
-4  
-8  
+ 25 C  
+ 65 C  
- 40 C  
-12  
-16  
-20  
+ 25 C  
+ 65 C  
- 40 C  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs. Temperature  
0
-10  
-20  
-30  
-40  
-50  
+ 25 C  
+ 65 C  
- 40 C  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 2  
HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
P1dB vs. Temperature  
Psat vs. Temperature  
25  
25  
20  
15  
10  
5
20  
15  
+ 25 C  
+ 65 C  
- 40 C  
+ 25 C  
+ 65 C  
- 40 C  
10  
5
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Power Compression @ 1 GHz  
Power Compression @ 3 GHz  
25  
25  
Pout (dBm)  
20  
15  
10  
5
20  
15  
10  
5
Gain (dB)  
PAE (%)  
Pout (dBm)  
Gain (dB)  
PAE (%)  
0
0
-5  
-5  
-8 -6 -4 -2  
0
2
4
6
8
10 12 14 16  
-8 -6 -4 -2  
0
2
4
6
8
10 12 14 16  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
Output IP3 vs. Temperature  
40  
35  
30  
25  
20  
15  
10  
5
+ 25 C  
+ 65 C  
- 40 C  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 3  
HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
Absolute Maximum Ratings  
Truth Table  
Collector Bias Voltage (Vcc)  
Control Voltage Range (Vpd)  
RF Input Power (RFin)(Vs = +5.0 Vdc)  
Junction Temperature  
+5.0 Vdc  
Vs  
5V  
5V  
Vctl  
Is  
Ictl  
State  
On  
-0.2 to 3.5 Vdc  
+20 dBm  
5V  
150 mA  
<1 μA  
12 mA  
<1 μA  
0V  
Power Down  
150 °C  
Continuous Pdiss (T = 65 °C)  
(derate 6.57 mW/°C above 65 °C)  
0.558 W  
Thermal Resistance  
(junction to lead)  
152 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +65 °C  
%,%#42/34!4)# 3%.3)4)6% $%6)#%  
/"3%26% (!.$,).' 02%#!54)/.3  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED  
PLASTIC SILICA AND SILICON IMPREGNATED.  
2. LEADFRAME MATERIAL: COPPER ALLOY  
3. LEADFRAME PLATING: Sn/Pb SOLDER  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 4  
HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
Application Circuit  
Note:  
1. Requires a 10 Ohm resistor (Rbias) in series with the Vcc line and a 160 Ohm resistor in series with the Vpd line.  
2. Requires Blocking Capacitors on Pins 1 & 3.  
3. Requires bypass capacitors on Vcc and Vpd line as shown.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 5  
HMC314  
v02.0802  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 0.7 - 4.0 GHz  
8
Evaluation PCB  
List of Material  
Item  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 ohm impedance while the  
package ground leads should be connected  
directly to the ground plane similar to that shown.  
A sufficient number of via holes should be used to  
connect the top and bottom ground planes. The  
evaluation circuit board shown is available from  
Hittite upon request.  
Description  
J1, J2  
J3, J4, J5  
U1  
PC Mount SMA Connector  
DC Pins  
HMC314  
PCB*  
104198 Evaluation PCB 1.5” x 1.5”  
*Circuit Board Material: Roger 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 6  

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