HMC326MS8G_07 [HITTITE]
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz; 砷化镓的InGaP HBT MMIC驱动放大器3.0 - 4.5 GHz的
| 型号： | HMC326MS8G_07 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz |
| 文件： | 总6页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Typical Applications
Features
The HMC326MS8G / HMC326MS8GE is ideal for:
Psat Output Power: +26 dBm
• Microwave Radios
> 40% PAE
• Broadband Radio Systems
Output IP3: +36 dBm
High Gain: 21 dB
• Wireless Local Loop Driver Amplifier
Vs: +5.0V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC driver amplifiers which operate
between 3.0 and 4.5 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal perfor-
mance. The amplifier provides 21 dB of gain and +26
dBm of saturated power from a +5.0V supply voltage.
Power down capability is available to conserve current
consumption when the amplifier is not in use. Internal
circuit matching was optimized to provide greater than
40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Units
GHz
dB
Frequency Range
3.0 - 4.5
Gain
18
21
Gain Variation Over Temperature
Input Return Loss
0.025
0.035
dB / °C
dB
12
Output Return Loss
7
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
32
23.5
dBm
dBm
dBm
dB
26
36
5
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Vpd = 0V / 5V
tOn/tOff
0.001 / 130
mA
7
mA
10
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 66
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
24
22
S21
S11
S22
20
0
+25C
+85C
-40C
-5
18
16
-10
-15
-20
3
3.25
3.5
3.75
4
4.25
4.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
30
30
28
26
24
22
20
28
26
24
22
20
+25C
+85C
-40C
+25C
+85C
-40C
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
Power Compression @ 3.5 GHz
40
45
40
35
30
25
20
15
10
38
36
34
+25C
+85C
32
Output Power (dBm)
Gain (dB)
PAE (%)
-40C
5
0
30
3
3.25
3.5
3.75
4
4.25
4.5
-8
-6
-4
-2
0
2
4
6
8
10
12
FREQUENCY (GHz)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 67
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-3
-6
-5
-10
-15
-20
-9
+25C
+85C
-40C
-12
-15
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-10
8
7
-20
6
+25C
+85C
-40C
-30
-40
-50
-60
5
4
3
2
+25C
+85C
1
0
-40C
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
150
130
110
90
70
50
P1dB
Psat
Gain
30
Icc
10
1.5
2
2.5
3
3.5
4
4.5
5
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 68
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
Junction Temperature
+5.5 Vdc
+5.5 Vdc
+15 dBm
150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
0.916 W
71 °C/W
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H326
XXXX
HMC326MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
H326
XXXX
MSL1 [2]
HMC326MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 69
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 104356 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA RF Connector
2mm DC Header
C1 - C2
330 pF Capacitor, 0603 Pkg.
C3
C4
C5
L1
0.7 pF Capacitor, 0603 Pkg.
3.0 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
3.3 nH Inductor, 0805 Pkg.
HMC326MS8G / HMC326MS8GE
Amplifier
U1
[2]
PCB
104106 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 70
HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Application Circuit
Recommended Component Values
L1
3.3 nH
330 pF
C1 - C2
C3
0.7 pF
C4
C5
3.0 pF
2.2 μF
Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc).
Note 2: C2 should be located < 0.1” (2.54 mm) from L1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 71
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