HMC460LC5_10 [HITTITE]
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz; 的GaAs PHEMT MMIC低噪声放大器， DC - 20 GHz的
| 型号： | HMC460LC5_10 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz |
| 文件： | 总6页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
Typical Applications
The HMC460LC5 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16.5 dBm @ 10 GHz
Supply Voltage: +8V @ 75 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5x5mm SMT Package: 25mm2
• Test Instrumentation
Functional Diagram
General Description
The HMC460LC5 is a GaAs MMIC pHEMT Low Noise
Distributed Amplifier in a leadless 5x5 mm ceramic
surface mount package which operates from DC to
20 GHz. The amplifier provides 14 dB of gain, 2.5 dB
noise figure and +16.5 dBm of output power at 1 dB
gain compression while requiring only 75 mA from a
Vdd = 8V supply. Gain flatness is excellent from DC
to 20 GHz making the HMC460LC5 ideal for EW,
ECM, Radar and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms.
Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 75 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6.0
14
Max.
Min.
Typ.
6.0 - 18.0
14
Max.
Min.
10
Typ.
18.0 - 20.0
13
Max.
Units
GHz
dB
Gain
11
11
Gain Flatness
0.5
0.15
0.01
2.5
0.25
0.01
3.5
dB
Gain Variation Over Temperature
Noise Figure
0.008
3.5
dB/ °C
dB
5.0
4.0
5
Input Return Loss
17
18
12
dB
Output Return Loss
17
15
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
14
17
13
16
12
15
dBm
dBm
dBm
18
18
17
29.5
29
28.5
Supply Current
75
75
75
mA
(Idd) (Vdd= 8V, Vgg= -0.9V Typ.)
* Adjust Vgg between -2 to 0V to achieve Idd= 75 mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 1
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
16
S11
S21
S22
0
12
-5
-10
-15
-20
-25
-30
-35
+25 C
+85 C
-40 C
8
4
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26
FREQUENCY (GHz)
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
-5
-10
-15
-20
-25
-30
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
-35
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
Noise Figure vs. Temperature
25
20
15
10
+25 C
+85 C
-40 C
8
6
4
2
0
10
S11
S21
S22
5
0
-5
-10
-15
-20
-25
-30
-35
-40
10-5
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 2
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
P1dB vs. Temperature
Psat vs. Temperature
25
25
+25 C
+85 C
-40 C
22
19
16
13
10
22
19
16
+25 C
+ 85 C
-40 C
13
10
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg
Output IP3 vs. Temperature
5
32
18
30
28
26
4
3
2
1
0
16
14
12
10
8
24
+25 C
+85 C
-40 C
22
NOISE FIGURE
GAIN
P1dB
20
18
7.5
7.75
8
8.25
8.5
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
Vdd (V)
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
+25 C
+85 C
-40 C
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 3
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
Gate Bias Voltage (Igg)
+9 Vdc
Vdd (V)
+7.5
Idd (mA)
-2 to 0 Vdc
74
75
76
2.5 mA
+18 dBm
175 °C
+8.0
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
+8.5
Continuous Pdiss (T = 85 °C)
(derate 23 mW/°C above 85 °C)
2 W
Thermal Resistance
(channel to package bottom)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
44.4 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING:
30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1 - 4, 7 - 12,
14, 16 - 20,
23 - 29, 31
No connection. These pins may be connected to RF ground.
Performance will not be affected.
N/C
This pin is DC coupled
and matched to 50 Ohms.
5
RFIN
GND
6, 21
Package bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 4
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Low frequency termination. Attach bypass capacitor per
application circuit herein.
13
ACG2
Gate control for amplifier.
Please follow”MMIC Amplifier Biasing Procedure”
application note
15
Vgg
This pin is DC coupled
and matched to 50 Ohms.
22
30
RFOUT
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
Power supply voltage for the amplifier.
External bypass capacitors are required
32
Vdd
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 5
HMC460LC5
v03.1010
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
7
Evaluation PCB
List of Materials for Evaluation PCB 117810 [1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and package bottom should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3 - J4
C4
Description
PCB Mount SMA Connector
2 mm Molex Header
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0402 Pkg.
4.7 µF Capacitor, Tantalum
0.1 uF Capacitor, 0603 Pkg.
0.01 uF Capacitor, 0603 Pkg.
2.2 uF Capacitor, 0603 Pkg.
HMC460LC5
C2, C3
C1
C5
C6
C7
U1
[2]
PCB
117808 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 6
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HITTITE
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