HMC474MP86_09 [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 6 GHz的
| 型号： | HMC474MP86_09 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
| 文件： | 总6页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
The HMC474MP86 & HMC474MP86E is an ideal
RF/IF gain block for:
Gain: 15.5 dB
9
P1dB Output Power: +8 dBm
Output IP3: +22 dBm
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Included in the HMC-DK001 Designer’s Kit
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC474MP86 & HMC474MP86E are general
purpose SiGe Heterojunction Bipolar Transistor (HBT)
Gain Block MMIC SMT amplifiers covering DC to 6
GHz. This Micro-P packaged amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage with up to
+10 dBm output power. The HMC474MP86(E) offer
15.5 dB of gain with a +22 dBm output IP3 at 850
MHz while requiring only 25 mA from a single positive
supply. The Darlington feedback pair used results in
reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
Electrical Specifications, Vs= 5V, Rbias= 110 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
13
12
10
9
8
7
15.5
14
12
11
10
9
dB
dB
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 6 GHz
0.01
0.015
dB/ °C
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
15
16
19
16
dB
dB
dB
dB
DC - 5 GHz
5.0 - 6.0 GHz
17
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 4 GHz
17
dB
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
5
4
3
8
7
6
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
22
20
17
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5 GHz
5.0 - 6.0 GHz
3
3.4
dB
dB
Noise Figure
Supply Current (Icq)
25
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 60
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
18
16
14
12
10
8
9
0
S21
S11
S22
-5
6
4
2
0
+25 C
+85 C
-40 C
-10
-15
-20
0
1
2
3
4
5
6
7
8
6
6
0
1
2
3
4
5
6
6
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
-5
-10
-15
-20
-25
-5
+85 C
-40 C
+25 C
+85 C
-40 C
-10
-15
-20
-25
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
6
+25 C
+85 C
-40 C
5
4
3
2
1
0
-5
+25 C
+85 C
-40 C
-10
-15
-20
-25
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 61
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
P1dB vs. Temperature
Psat vs. Temperature
12
12
9
10
8
10
8
6
6
+25 C
+85 C
-40 C
4
4
2
0
+25 C
+85 C
-40 C
2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 25 mA @ 850 MHz
Output IP3 vs. Temperature
32
30
Gain
P1dB
Psat
OIP3
28
24
20
16
12
8
25
20
15
+25 C
+85 C
-40 C
10
5
4
0
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
Vs (Vdc)
FREQUENCY (GHz)
Icc vs. Vcc Over Temperature for
Gain, Power & OIP3 vs. Supply Voltage
Fixed Vs= 5V, RBIAS= 110 Ohms
for Rs = 110 Ohms @ 850 MHz
28
32
Gain
P1dB
Psat
OIP3
27
28
24
20
16
12
8
26
+85 C
25
+25 C
24
23
22
21
20
-40 C
4
0
2
2.1
2.2
2.3
Vcc (Vdc)
2.4
2.5
2.6
4.75
5
5.25
Vs (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 62
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
+6.0 Vdc
9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
35 mA
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
0.280 W
Thermal Resistance
(junction to lead)
232 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1B
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
474
HMC474MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC474MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
474
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 63
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
9
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V
5V
6V
8V
10V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
30 Ω
1/8 W
110 Ω
1/8 W
150 Ω
1/4 W
240 Ω
1/2 W
300 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5500
3.3 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 64
HMC474MP86 / 474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
9
List of Materials for Evaluation PCB 107179 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC474MP86 / HMC474MP86E
107087 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 65
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