HMC482ST89ETR [HITTITE]

Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, ROHS COMPLIANT, PLASTIC, SMT, SOT-89, 4 PIN;
HMC482ST89ETR
型号: HMC482ST89ETR
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, ROHS COMPLIANT, PLASTIC, SMT, SOT-89, 4 PIN

射频 微波
文件: 总6页 (文件大小:238K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Typical Applications  
Features  
The HMC482ST89 / HMC482ST89E is an ideal RF/IF  
gain block & LO or PA driver for:  
P1dB Output Power: +22 dBm  
8
Gain: 20 dB  
• Cellular / PCS / 3G  
Output IP3: +36 dBm  
• Fixed Wireless, WLAN & WiMAX  
• CATV, Cable Modem & DBS  
• Microwave Radio & Test Equipment  
Cascadable 50 Ohm I/Os  
Single Supply: +6V to +12V  
Industry Standard SOT89 Package  
Included in the HMC-DK001 Designer’s Kit  
Functional Diagram  
General Description  
The HMC482ST89  
& HMC482ST89E are SiGe  
Heterojunction Bipolar Transistor (HBT) Gain Block  
MMIC SMT amplifiers covering DC to 5 GHz. Packaged  
in an industry standard SOT89, the amplifier can  
be used as a cascadable 50 Ohm RF/IF gain stage  
as well as a LO or PA driver with up to +24 dBm out-  
put power. The Darlington feedback pair results in  
reduced sensitivity to normal process variations and  
excellent gain stability over temperature while requiring  
a minimal number of external bias components.  
Electrical Specifications, Vs= 8.0 V, Rbias= 27 Ohm, TA = +25° C  
Parameter  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
17  
15  
12.5  
10  
19  
17  
14.5  
12  
dB  
dB  
dB  
dB  
dB  
Gain  
8
10  
Gain Variation Over Temperature  
Input Return Loss  
DC - 5 GHz  
0.008  
0.016  
dB/ °C  
DC - 1.0 GHz  
1.0 - 5.0 GHz  
15  
18  
dB  
dB  
DC - 1.0 GHz  
1.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
20  
14  
12  
8
dB  
dB  
dB  
dB  
Output Return Loss  
Reverse Isolation  
DC - 5 GHz  
16  
dB  
0.5 - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
19.5  
17  
14.5  
12.5  
10.5  
22.5  
20  
17.5  
15.5  
13.5  
dBm  
dBm  
dBm  
dBm  
dBm  
Output Power for 1 dB Compression (P1dB)  
0.5 - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
36  
35  
32  
30  
28  
dBm  
dBm  
dBm  
dBm  
dBm  
Output Third Order Intercept (IP3)  
(Pout= 0 dBm per tone, 1 MHz spacing)  
DC - 2.0 GHz  
2.0 - 4.0 GHz  
4.0 - 5.0 GHz  
4
5
5.5  
dB  
dB  
dB  
Noise Figure  
Supply Current (Icq)  
110  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 140  
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Broadband Gain & Return Loss  
Gain vs. Temperature  
25  
20  
15  
10  
5
24  
8
20  
16  
S21  
S11  
S22  
0
12  
-5  
+25C  
-10  
-15  
-20  
-25  
-30  
8
+85C  
-40C  
4
0
0
1
2
3
4
5
6
6
5
0
1
2
3
4
5
6
7
8
6
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
-5  
+25C  
+85C  
-10  
-40C  
-10  
-20  
-15  
-20  
-25  
-30  
+25C  
+85C  
-40C  
-30  
-40  
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs. Temperature  
Noise Figure vs. Temperature  
0
10  
-5  
+25C  
8
6
4
2
0
+85C  
-40C  
+25C  
+85C  
-40C  
-10  
-15  
-20  
-25  
-30  
0
1
2
3
4
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 141  
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
P1dB vs. Temperature  
Psat vs. Temperature  
30  
30  
8
+25C  
+85C  
-40C  
26  
22  
18  
14  
10  
26  
22  
18  
+25C  
+85C  
-40C  
14  
10  
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Gain, Power & OIP3 vs. Supply Voltage  
for Constant Icc= 110 mA @ 850 MHz  
Output IP3 vs. Temperature  
40  
38  
36  
34  
32  
30  
40  
32  
24  
16  
28  
Gain  
+25C  
P1dB  
8
+85C  
Psat  
IP3  
-40C  
26  
24  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
6
7
8
9
10  
11  
12  
FREQUENCY (GHz)  
Vs (Vdc)  
Vcc vs. Icc Over Temperature for  
Fixed Vs= 8V, RBIAS= 27 Ohms  
128  
126  
124  
122  
120  
118  
116  
114  
112  
110  
108  
+85C  
+25C  
-40C  
4.6  
4.7  
4.8  
4.9  
Vcc (Vdc)  
5
5.1  
5.2  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 142  
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc)  
RF Input Power (RFIN)(Vcc = +5 Vdc)  
Junction Temperature  
+6.0 Vdc  
8
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
+14 dBm  
150 °C  
0.94 W  
Continuous Pdiss (T = 85 °C)  
(derate 14.5 mW/°C above 85 °C)  
Thermal Resistance  
(junction to lead)  
69 °C/W  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL:  
MOLDING COMPOUND MP-180S OR EQUIVALENT.  
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.  
3. LEAD PLATING: 100% MATTE TIN.  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H482  
XXXX  
HMC482ST89  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H482  
XXXX  
MSL1 [2]  
HMC482ST89E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 143  
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
8
This pin is DC coupled.  
An off chip DC blocking capacitor is required.  
1
RFIN  
3
RFOUT  
GND  
RF output and DC Bias (Vcc) for the output stage.  
These pins and package bottom must be connected to RF/  
DC ground.  
2, 4  
Application Circuit  
Recommended Bias Resistor Values for  
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc  
Supply Voltage (Vs)  
6V  
8V  
10V  
47 Ω  
1 W  
12V  
62 Ω  
1.5 W  
Note:  
1. External blocking capacitors are required on  
RFIN and RFOUT.  
2. RBIAS provides DC bias stability over temperature.  
RBIAS VALUE  
9.1 Ω  
1/4 W  
27 Ω  
1/2 W  
RBIAS POWER RATING  
Recommended Component Values for Key Application Frequencies  
Frequency (MHz)  
Component  
50  
900  
1900  
18 nH  
100 pF  
2200  
18 nH  
100 pF  
2400  
15 nH  
100 pF  
3500  
8.2 nH  
100 pF  
5000  
6.8 nH  
100 pF  
L1  
270 nH  
0.01 μF  
56 nH  
100 pF  
C1, C2  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 144  
HMC482ST89 / 482ST89E  
v04.0710  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Evaluation PCB  
8
List of Materials for Evaluation PCB 109026 [1]  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 Ohm impedance while the  
package ground leads and package bottom should  
be connected directly to the ground plane similar to  
that shown. A sufficient number of via holes should  
be used to connect the top and bottom ground  
planes. The evaluation board should be mounted  
to an appropriate heat sink. The evaluation circuit  
board shown is available from Hittite upon request.  
Item  
J1 - J2  
J3 - J4  
C1, C2  
C3  
Description  
PCB Mount SMA Connector  
DC Pin  
Capacitor, 0402 Pkg.  
100 pF Capacitor, 0402 Pkg.  
1000 pF Capacitor, 0603 Pkg.  
2.2 μF Capacitor, Tantalum  
Resistor, 1210 Pkg.  
C4  
C5  
R1  
L1  
Inductor, 0603 Pkg.  
U1  
HMC482ST89 / HMC482ST89E  
107368 Evaluation PCB  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 145  

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