HMC490LP5 [HITTITE]
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz; 的GaAs PHEMT MMIC低噪声高IP3放大器， 12 - 16 GHz的
| 型号： | HMC490LP5 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC490LP5
v00.0404
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Typical Applications
The HMC490LP5 is ideal for use as either a LNA
or driver amplifier for:
Features
8
Noise Figure: 2.5 dB
+25 dBm P1dB Output Power
Gain: 23 dB
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
+34 dBm Output IP3
+5V Supply
• Military EW, ECM & C3I
50 Ohm Matched Input/Output
25 mm2 Leadless QFN SMT Package
Functional Diagram
General Description
The HMC490LP5 is a high dynamic range
GaAs PHEMT MMIC Low Noise Amplifier
which operates between 12 and 16 GHz. The
HMC490LP5 provides 23 dB of gain, 2.5 dB
noise figure and an output IP3 of +34 dBm from
a +5.0 V supply voltage. This versatile amplifier
combines excellent, stable +25 dBm P1dB
output power with very low noise figure making
it ideal for receive and transmit applications.The
amplifier is packaged in a leadless 5 mm x 5 mm
QFN surface mount package.
Electrical Specifications,TA = +25° C, Vdd = 5V, Idd = 200 mA*
Parameter
Min.
Typ.
12 - 16
23
Max.
Units
GHz
dB
Frequency Range
Gain
20
Gain Variation Over Temperature
Noise Figure
0.03
2.5
8
0.04
3.5
dB/ °C
dB
Input Return Loss
Output Return Loss
dB
8
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
22
25
dBm
dBm
dBm
mA
27
Output Third Order Intercept (IP3)
34
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
* Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical.
200
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 318
HMC490LP5
v00.0404
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
GaAs MMIC SUB-HARMONICALLY GPaUinMvPs.ETDemMpeIrXaEtuRre 17 - 25 GHz
Broadband Gain & Return Loss
30
25
20
15
10
5
30
28
26
24
22
20
18
16
14
12
10
8
8
S21
S11
S22
0
-5
+25 C
+85 C
-40 C
-10
-15
-20
8
10
12
14
16
18
20
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
-2
-4
+25 C
+85 C
-40 C
-5
-6
-10
-8
-10
-12
-14
-15
-20
+25 C
+85 C
-40 C
10
11
12
13
14
15
16
17
18
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Output IP3 vs.Temperature
10
9
8
7
6
5
4
3
2
1
0
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
10
11
12
13
14
15
16
17
18
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 319
v00.0404
HMC490LP5
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
P1dB vs.Temperature
Psat vs.Temperature
8
32
30
28
26
24
22
20
18
16
14
12
10
8
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
+25 C
+85 C
-40 C
+25 C
+85 C
6
4
2
0
-40 C
10
11
12
13
14
15
16
17
18
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Noise Figure & OIP3 vs.
Supply Voltage @ 14 GHz, Idd= 200 mA
Power Compression @ 14 GHz
5
40
38
36
34
32
30
28
26
24
22
20
30
28
26
24
22
20
18
16
14
12
10
8
4.5
4
Gain
OIP3
Noise Figure
3.5
3
2.5
2
1.5
1
Pout (dBm)
Gain (dB)
PAE (%)
6
4
2
0
0.5
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8 10
3.5
3.75
4
4.25
4.5
4.75
5
5.25
5.5
INPUT POWER (dBm)
Vdd (Vdc)
Gain, Noise Figure & IP3 vs.
Supply Current @ 14 GHz, Vdd= 5V*
Reverse Isolation vs.Temperature
5
0
34
32
30
28
26
24
22
20
4.5
4
-10
-20
-30
-40
-50
-60
-70
+25 C
+85 C
-40 C
3.5
3
2.5
2
1.5
1
18
Gain
OIP3
0.5
0
16
14
Noise Figure
100
125
150
175
200
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Idd (mA)
* Idd is controlled by varying Vgg
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 320
v00.0404
HMC490LP5
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
8
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
+5.5 Vdc
Vdd (Vdc)
+3.0
Idd (mA)
140
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm
+3.5
154
Channel Temperature
175 °C
2.65 W
+4.0
168
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
+4.5
188
+5.0
200
Thermal Resistance
(channel to ground paddle)
34 °C/W
+5.5
208
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Note: Amplifier will operate over full voltage ranges shown above.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 321
HMC490LP5
v00.0404
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Pin Descriptions
8
Pin Number
Function
Description
Interface Schematic
1, 2, 6-12,
14-19, 23, 24,
26, 27, 29-31
No connection. These pins may be connected to RF ground.
Performance will not be affected.
N/C
3, 5, 20, 22
GND
Package bottom must also be connected to RF/DC ground.
This pad is AC coupled and matched to 50 Ohms from
12 - 16 GHz.
4
RF IN
Gate control for amplifier. Adjust to achieve Idd of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.01 µF are required.
13
Vgg
This pad is AC coupled and matched to 50 Ohms from
12 - 16 GHz.
21
RF OUT
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 µF are required.
25, 28, 32
Vdd3, 2, 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 322
HMC490LP5
v00.0404
MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Evaluation PCB
8
List of Materials for Evaluation PCB 108402*
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown.A sufficient number of
VIA holes should be used to connect the top and bottom
ground planes.The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
Description
J1 - J2
J3 - J8
C1 - C4
C5 - C8
U1
PC Mount SMA Connector
DC Pin
1000pF Capacitor, 0402 Pkg.
4.7 µF Capacitor, Tantalum
HMC490LP5
PCB**
108540 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 323
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