HMC592 [HITTITE]
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz; 的GaAs PHEMT MMIC 1瓦的功放， 10.0 - 13.0 GHz的
| 型号： | HMC592 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz |
| 文件： | 总8页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Typical Applications
Features
The HMC592 is ideal for use as a power amplifier for:
Saturated Output Power:
+31 dBm @ 21% PAE
• Point-to-Point Radios
Output IP3: +38 dBm
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
Gain: 19 dB
DC Supply: +7.0 V @ 750 mA
50 Ohm Matched Input/Output
Die Size: 2.47 mm x 1.17 mm x 0.1 mm
• Space
Functional Diagram
General Description
The HMC592 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from
10 to 13 GHz. This amplifier die provides 19 dB of
gain and +31 dBm of saturated power, at 21% PAE
from a +7.0V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test fixture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 400 mA, to yield +38 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 750 mA, to yield +31 dBm Output
P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 750 mA*
Parameter
Min.
Typ.
10 - 13
19
Max.
Units
GHz
dB
Frequency Range
Gain
16
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.05
10
dB/ °C
dB
12
dB
Output Power for 1 dB
Compression (P1dB)
28
31
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Supply Current (Idd)
31.2
38
dBm
dBm
mA
750
800
[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.
[2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Broadband Gain & Return Loss
Gain vs. Temperature
30
25
20
15
10
5
28
26
24
22
20
18
16
14
S21
S11
S22
0
-5
-10
-15
-20
-25
12
10
8
+25C
+85C
-55C
6
7
8
9
10
11
12
13
14
15
14
13
9
9.5
10
10.5
11
11.5
12
12.5
13
14
13
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
-10
-10
-15
-15
+25C
+85C
-55C
+25C
+85C
-20
-25
-20
-55C
-25
8
9
10
11
12
13
8
9
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
33
32
31
30
29
28
27
26
25
24
23
33
32
31
30
29
28
27
26
25
24
23
+25C
+85C
-55C
+25C
+85C
-55C
9
9.5
10
10.5
11
11.5
12
12.5
9
9.5
10
10.5
11
11.5
12
12.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 231
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
P1dB vs. Current
Psat vs. Current
33
32
31
30
29
28
27
26
25
24
23
33
32
31
30
29
28
400mA
500mA
600mA
700mA
750mA
27
26
25
24
23
400mA
500mA
600mA
700mA
750mA
9
9.5
10
10.5
11
11.5
12
12.5
13
13
8
9
9.5
10
10.5
11
11.5
12
12.5
13
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 400 mA, Pin/Tone = -15 dBm
Power Compression @ 8 GHz, 7V @ 750 mA
44
42
40
38
36
34
35
30
Pout
Gain
PAE
25
20
15
10
5
32
30
28
26
24
+25C
+85C
-55C
0
9
9.5
10
10.5
11
11.5
12
12.5
-14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IM3, 7V @ 400 mA
Output IM3, 7V @ 750 mA
90
80
70
60
50
90
80
70
60
50
40
30
20
10
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
40
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
30
20
10
0
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
Pin/Tone (dBm)
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 232
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
36
36
32
32
28
28
Gain
P1dB
Psat
Gain
P1dB
Psat
24
20
16
12
24
20
16
12
400
450
500
550
600
650
700
750
6.5
7
7.5
Idd SUPPLY CURRENT (mA)
Vdd SUPPLY VOLTAGE (Vdc)
Reverse Isolation vs. Temperature
Power Dissipation
0
6
5.75
5.5
-10
-20
5.25
5
+25C
+85C
-55C
-30
4.75
4.5
-40
-50
-60
-70
-80
4.25
9 GHz
4
3.75
3.5
10 GHz
11 GHz
12 GHz
13 GHz
3.25
3
9
9.5
10
10.5
11
11.5
12
12.5
13
-14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
FREQUENCY (GHz)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 233
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Vdd (V)
Idd (mA)
757
Drain Bias Voltage (Vdd)
+8 Vdc
+6.5
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
+7.0
+7.5
750
RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm
745
Channel Temperature
175 °C
5.64 W
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
15.94 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard
Alternate
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 234
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is AC coupled and
matched to 50 Ohms.
1
RFIN
Gate control for amplifier. Adjust to achieve Idd of 750 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
2, 4, 6
3, 5, 7
Vgg 1-3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
Vdd 1-3
This pad is AC coupled and
matched to 50 Ohms.
8
RFOUT
GND
Die Bottom
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 235
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 236
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 237
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