HMS8N50K [HMSEMI]
500V N-Channel MOSFET;
| 型号： | HMS8N50K |
| 厂家： | 
H&M Semiconductor |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：935K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMS8N50K/HMS8N50I
HMS8N50K/HMS8N50I
500V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using H&M Semi’s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V
- Low gate charge ( typical 25nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
D
D
I-PAK
D-PAK
G
G
S
G D S
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
HMS8N50K/HMS8N50I
Units
Drain-Source Voltage
500
V
VDSS
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
7.6*
A
A
ID
5*
10
IDM
(Note 1)
Drain Current
A
VGSS
Gate-Source Voltage
±30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
86
mJ
A
1.7
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
43
mJ
V/ns
W
dv/dt
4.5
57
PD
- Derate above 25℃
0.45
-55 to +150
W/℃
℃
TJ, TSTG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
TL
300
℃
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
HMS8N50K/HMS8N50I
Units
Thermal Resistance, Junction-to-Case
2.2
℃/W
RθJC
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.5
62
℃/W
℃/W
RθJS
RθJA
HMS8N50K/HMS8N50I
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
VGS = 0 V, ID = 250 uA, TJ=25℃
VGS = 0 V, ID = 250 uA, TJ=150℃
500
--
--
--
--
V
V
BVDSS
Drain-Source Breakdown Voltage
550
△BVDSS
/ △TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 uA, Referenced to 25℃
--
0.6
--
V/
℃
V
DS = 500 V, VGS = 0 V
--
--
--
--
--
--
--
--
1
uA
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
uA
nA
nA
IGSSF
IGSSR
V
GS = 30 V, VDS = 0 V
GS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
V
On Characteristics
VGS(th)
V
DS = VGS, ID = 250 uA
Gate Threshold Voltage
2.5
--
3.5
0.5
4.5
V
Static Drain-Source
On-Resistance
RDS(on)
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
0.55
Ω
(Note 4)
gFS
Forward Transconductance
--
16
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
360
25
--
--
--
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
--
--
--
--
--
--
--
25
55
70
40
8
ꢀ
--
--
--
--
--
--
--
ns
ns
VDD = 400 V, ID = 3.5 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 20 Ω
ns
(Note 4, 5)
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 480 V, ID = 7 A,
GS = 10 V
2.0
2.7
V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
7
18
1.5
--
A
A
VGS = 0 V, IS = 7 A
GS = 0 V, IS = 7 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
190
ns
(Note 4)
Qrr
dIF / dt = 100 A/us
Reverse Recovery Charge
--
2.3
--
uC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25 ℃
3. ISD≤7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
HMS8N50K/HMS8N50I
Typical Characteristics
Figure 1: Power Dissipation
Figure 2: Transient Thermal Impedance
Figure 3: Safe Operating Area@25℃
Figure 4: Safe Operating Area@80℃
Figure 5: Output Characteristics@25℃
Figure 6: Output Characteristics@125℃
HMS8N50K/HMS8N50I
Typical Characteristics
Figure 7: On-Resistance vs. Drain Current
Figure 8: On-Resistance vs. Temperatures
Figure 9: Transfer Characteristics
Figure 10: Gata Charge
Figure 12: Drain-Source Breakdown Voltage
Figure 11: Avalanche Energy
HMS8N50K/HMS8N50I
Typical Characteristics
Figure 13: Capacitances
Figure 14: Coss Stored Energy
Figure 15: Forward Characteristics Of Reverse Diode
HMS8N50K/HMS8N50I
Gate Charge Test Circuit & Waveform
Current Regulator
VGS
Same Type
as DUT
50KΩ
200nF
Qg
12V
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
3mA
R1
R2
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
( 0.5 rated VDS
Vin
)
RG
DUT
10%
Vin
10V
td(on)
tr
t on
td(off)
t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
1
LL
2
----
2
EAS
=
LL IAS
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
ID
RG
I
D (t)
C
VDD
DUT
VDD
VDS (t)
10V
Time
t p
t p
HMS8N50K/HMS8N50I
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
• dv/dt controlled by RG
VGS
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
IFM , Body Diode Forward Current
I S
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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