HJ649A [HSMC]

PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
HJ649A
型号: HJ649A
厂家: HI-SINCERITY MOCROELECTRONICS    HI-SINCERITY MOCROELECTRONICS
描述:

PNP EPITAXIAL PLANAR TRANSISTOR
PNP外延平面晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:30K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : HE6830  
Issued Date : 1994.01.25  
Revised Date : 2002.04.03  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HJ649A  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HJ649A is designed for low frequency power amplifier.  
TO-252  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W  
Maximum Voltages and Currents  
BVCBO Collector to Base Voltage.................................................................................... -180 V  
BVCEO Collector to Emitter Voltage................................................................................. -160 V  
BVEBO Emitter to Base Voltage........................................................................................... -5 V  
IC Collector Current........................................................................................................... -1.5 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
*VCE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
fT  
-180  
-160  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA  
V
V
IC=-1mA  
IC=-10mA  
IE=-1mA  
-10  
-1  
-1.5  
200  
-
VCB=-160V  
IC=-500mA, IB=-50mA  
VCE=-5V,IC=-150mA  
VCE=-5V,IC=-150mA  
VCE=-5V,IC=-500mA  
VCE=-5V, IC=-150mA  
VCB=-10V, f=1MHz, IE=0  
-
60  
30  
-
-
140  
27  
-
-
MHz  
pF  
Cob  
-
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification Of hFE1  
Rank  
B
C
Range  
60-120  
100-200  
HJ649A  
HSMC Product Specification  
Spec. No. : HE6830  
Issued Date : 1994.01.25  
Revised Date : 2002.04.03  
Page No. : 2/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
Characteristics Curve  
Current Gain & Collector Current  
Saturation Voltage & Collector Current  
1000  
100  
10  
10000  
1000  
100  
CE(sat)  
V
C
B
@ I =10I  
125oC  
25oC  
75oC  
125oC  
75oC  
CE  
hFE @ V =5V  
25oC  
1
10  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
C
C
Collector Current-I (mA)  
Collector Current-I (mA)  
ON Voltage & Collector Current  
10000  
1000  
100  
BE(ON)  
CE  
@ V =5V  
V
75oC  
25oC  
125oC  
1
10  
100  
1000  
10000  
C
Collector Current-I (mA)  
HJ649A  
HSMC Product Specification  
Spec. No. : HE6830  
Issued Date : 1994.01.25  
Revised Date : 2002.04.03  
Page No. : 3/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
TO-252 Dimension  
Marking:  
A
C
H
J
6 4 9 A  
D
B
Rank  
Date Code  
Control Code  
L
F
G
Style: Pin 1.Base 2.Collector 3.Emitter  
3
2
H
E
K
I
1
J
3-Lead TO-252 Plastic Surface Mount Package  
HSMC Package Code: J  
*: Typical  
Inches  
Min. Max.  
Millimeters  
Inches  
Min. Max.  
0.0866 0.1102  
Millimeters  
DIM  
DIM  
Min.  
Max.  
0.55  
1.95  
1.50  
0.60  
6.80  
5.80  
Min.  
Max.  
2.80  
*2.30  
0.90  
0.80  
5.50  
1.60  
A
B
C
D
E
F
0.0177 0.0217  
0.0650 0.0768  
0.0354 0.0591  
0.0177 0.0236  
0.2520 0.2677  
0.2125 0.2283  
0.45  
1.65  
0.90  
0.45  
6.40  
5.40  
G
H
I
J
K
L
2.20  
-
-
-
*0.0906  
0.0354  
0.0315  
-
-
-
0.2047 0.2165  
0.0551 0.0630  
5.20  
1.40  
Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.  
2.Controlling dimension: millimeters.  
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.  
HSMC reserves the right to make changes to its products without notice.  
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.  
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454  
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C  
Tel: 886-3-5983621~5 Fax: 886-3-5982931  
HJ649A  
HSMC Product Specification  

相关型号:

HJ664HLP

Boîte de jonction en acier doux de types 4 et 12
HAMMOND

HJ6668

PNP EPITAXIAL PLANAR TRANSISTOR
HSMC

HJ667A

PNP EPITAXIAL PLANAR TRANSISTOR
HSMC

HJ669A

NPN EPITAXIAL PLANAR TRANSISTOR
HSMC

HJ6718

NPN EPITAXIAL PLANAR TRANSISTOR
HSMC

HJ683HLP

Boîte de jonction en acier doux de types 4 et 12
HAMMOND

HJ6ABK

Ascent Category 6A Jack
HUBBELL

HJ6ABK25

Ascent Category 6A Jack
HUBBELL

HJ772

PNP EPITAXIAL PLANAR TRANSISTOR
HSMC

HJ810-250MHZ

Analog IC
ETC

HJ810-65MHZ

Analog IC
ETC

HJ810-SERIES

Analog IC
ETC