BSR43 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BSR43 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRS43
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z
z
z
Low Voltage
1. BASE
High Current
Complement to BSR33
2. COLLECTOR
3. EMITTER
AAPLICATIONS
z
z
Thick and Thin-Film Circuits
Telephony and General Industrial Applications
MARKING:AR4
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
90
80
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
250
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
90
80
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100µA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100µA,IC=0
V
V
ICBO
IEBO
VCB=60V,IE=0
100
100
nA
nA
Emitter cut-off current
VEB=5V,IC=0
hFE(1)
hFE(2)
hFE(3)
*
*
*
VCE=5V, IC=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
30
100
50
DC current gain
300
0.25
0.5
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
*
V
VBE(sat)
*
1.2
V
fT
100
MHz
pF
pF
Transition frequency
Collector output capacitance
Cob
Cib
12
90
Emitter input capacitance
*Pulse test
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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