BST52 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BST52 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BST52
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z
z
z
Low Voltage
1. BASE
High Current
2. COLLECTOR
3. EMITTER
Integrated Diode and Resistor
APPLICATIONS
z
Industrial Switching Applications: Print Hammer,
Solenoid, Relay and Lamp Driving
MARKING:AS3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
IC
Parameter
Collector-Base Voltage
Value
90
Unit
V
Collector-Emitter Voltage
Collector Current
80
V
500
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
VCES
Test
conditions
Min
90
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter sustain voltage
Collector cut-off current
IC=100µA,IE=0
VBE=0,IC=100µA
80
V
ICES
VBE=0, VCE=80V
50
50
nA
nA
Emitter cut-off current
IEBO
VEB=4V,IC=0
VCE=10V, IC=150mA
VCE=10V, IC=500mA
IC=500mA,IB=0.5mA
IC=500mA,IB=0.5mA
VCE=5V,IC=500mA, f=100MHz
1000
2000
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
1.3
1.9
V
V
200
MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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