UML6N [HTSEMI]
General purpose transistors (Isolated transistor and diode); 通用晶体管（隔离的晶体管和二极管）
| 型号： | UML6N |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | General purpose transistors (Isolated transistor and diode) |
| 文件： | 总2页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UML6N
General purpose transistors(Isolated transistor and diode)
FEATURES
2SC5585 and RB521S-30 chips in a package
SOT-353
APPLICATIONS
DC / DC converter
Motor driver
FEATURES
1
1) Tr : Low VCE(sat)
Di : Low VF
2) Small package
STRUCTURE
Silicon epitaxial planar transistor
Schottky barrier diode
Marking: L6
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
DI
Parameter
Symbol
VR
Limits
30
Unit
V
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
IO
200
mA
A
IFSM
Tj
1
125
℃
Tstg
-55~+150
℃
TR
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Limits
Unit
15
12
V
V
6
V
Collector Current -Continuous
Collector Dissipation
500
mA
mW
℃
PC
150
Tj
Junction temperature
Storage Temperature
150
Tstg
-55~+150
℃
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
UML6N
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
DI
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
Reverse current
VF
IR
0.5
30
V
IF=200mA
VR=10V
μA
TR
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
15
12
6
V
V
VCB=15V,IE=0
0.1
0.1
uA
uA
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
hFE
VCE=2V,IC=10mA
270
680
0.25
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=200mA,IB=10mA
VCE=2V,IE=-10mA, f=100MHz
VCB=10V,IE=0mA, f=1MHz
V
320
7.5
MHz
pF
Collector output capacitance
Cob
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
©2020 ICPDF网 联系我们和版权申明