HY1310V [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1310V |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1310D/U/V
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
100V/ 33 A,
R
DS(ON)=19.5 m(typ.) @ VGS=10V
RDS(ON)=20.5m(typ.) @ VGS=4.5V
Avalanche Rated
•
•
•
S
S
Reliable and Rugged
D
D
G
G
Lead Free and GreenDevicesAvailable
(RoHS Compliant)
S
D
G
TO-251-3L
TO-251-3S
TO-252-2L
Applications
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
D : TO-252-2L
U : TO-251-3L
v
D
U
HY1310
HY1310 HY1310
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
YYXXXJWW G
YYXXXJWW G YYXXXJWW G
Note: Huayi lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
Huayi
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Huayi reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY1310D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
100
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
33
TC=25°C
Mounted on Large Heat Sink
IDM
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
130**
33
A
A
Pulsed Drain Current *
ID
Continuous Drain Current
22
54
PD
Maximum Power Dissipation
W
21.7
2.3
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
°C/W
°C/W
mJ
RJC
RJA
EAS
110
190***
L=0.5mH
Note：
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=80V
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
HY1310
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
100
-
-
1
V
VGS=0V, IDS=250A
VDS=100V, VGS=0V
-
-
-
A
TJ=85°C
-
30
1.0
-
2.0
-
3.0
±100
24
V
VDS=VGS, IDS=250A
VGS=±20V, VDS=0V
VGS=10V, IDS=16 A
VGS=4.5V, IDS=16 A
IGSS
Gate Leakage Current
nA
-
-
19.5
20.5
m
m
*
RDS(ON)
Drain-Source On-state Resistance
26
Diode Characteristics
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=16 A, VGS=0V
-
-
-
0.8
40
75
1.3
V
*
-
-
ns
nC
IDS=16 A, dlSD/dt=100A/s
Qrr
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HY1310D/U/V
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)
HY1310
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1.2
3900
115
102
36
-
-
-
-
-
-
-
-
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD=50V, RG=3 ,
15
I
DS=16A, V GS=10V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
79
20
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
90
10
19
-
-
-
VDS=80V, VGS=10V,
IDS=16 A
nC
Note * : Pulse test ; pulse width 300s, duty cycle2%.
.
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HY1310D/U/V
Typical Operating Characteristics
Drain Current
Power Dissipation
80
45
40
70
60
50
40
30
20
10
35
30
25
20
15
10
5
TA=25oC
TA=25oC,VG=10V
0
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (ꢀC)
Tj - Junction Temperature
Safe Operation Area
500
100
Limit
Rds(on)
10us
10
1
100us
1ms
10ms
DC
TC=25OC
0.1
0.1
1
10
100
500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
1
D = 0.50
0.20
0.10
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthjc + Tc
0.1
0.01
0.05
0.02
Pdm
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t1
t2
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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HY1310D/U/V
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
45
40
35
30
25
20
15
5
50
45
40
35
30
25
20
15
10
5
VGS=4.5,6,10V
VGS=4.5V
VGS=10V
3.5V
2.5V
0
0
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
45
IDS= 16A
IDS =250μA
40
35
30
25
20
15
5
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (ꢀC)
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HY1310D/U/V
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
30
10
VGS = 10V
IDS = 16A
Tj=150oC
Tj=25oC
1
RON@T =25oC:19.5mΩ
j
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (ꢀC)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
7200
6400
5600
4800
4000
3200
2400
1600
800
10
Frequency=1MHz
VDS= 80V
IDS= 16A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
8
16
24
32
40
0
20
40
60
80
100
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
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HY1310D/U/V
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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HY1310D/U/V
Package Information
TO-252-2L
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HY1310D/U/V
TO-251-3L(IPAK)
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HY1310D/U/V
TO-251-3S(SIPAK)
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HY1310D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Classification Profile
11
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HY1310D/U/V
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
3C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 C
220 C
220 C
2.5 mm
220 C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 C
Volume mm3
<350
260 C
260 C
250 C
>2000
260 C
245 C
245 C
1.6 mm – 2.5 mm
2.5 mm
250 C
245 C
Reliability Test Program
Test item
SOLDERABILITY
Method
Description
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168/500/1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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