HY1606U [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1606U |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：963K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1606D/U/V
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
60V/66A,
R
DS(ON)=10.4m(typ.) @ VGS=10V
•
•
•
Avalanche Rated
Reliable and Rugged
S
D
S
Lead Free and GreenDevicesAvailable
(RoHS Compliant)
G
D
G
S
D
G
TO-251-3L
TO-251-3L
TO-252-2L
Applications
Power Management for Inverter Systems.
N-ChannelMOSFET
Ordering and Marking Information
Package Code
D : TO-252-2L
V : TO-251-3S
U : TO-251-3L
D
U
V
HY1606
HY1606
HY1606
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
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V1.1
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HY1606D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
60
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
66
TC=25°C
Mounted on Large Heat Sink
IDM
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
250**
66
A
A
Pulsed Drain Current *
ID
Continuous Drain Current
45
64
PD
Maximum Power Dissipation
W
32
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
2.35
110
200***
°C/W
°C/W
mJ
RJC
RJA
EAS
L=0.5mH
Note：
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=48V
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
HY1606
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
60
-
-
-
-
1
V
VGS=0V, IDS=250A
VDS=60V, VGS=0V
IDSS Zero Gate Voltage Drain Current
A
TJ=85°C
-
-
10
4
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
2
-
3
-
V
VDS=VGS, IDS=250A
VGS=±25V, VDS=0V
±100
nA
m
*
RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=33A
-
10.4 12.5
Diode Characteristics
*
VSD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=33A, VGS=0V
-
-
-
0.8
33
61
1.2
V
trr
-
-
ns
nC
ISD=33A, dlSD/dt=100A/s
Qrr
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V1.1
2
HY1606D/U/V
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)
HY1606
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
0.9
2040
760
370
14
-
-
-
-
-
-
-
-
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
V =30V, R = ,
5
DD
G
13
I
DS=33A, V =10V,
ns
GS
20
7
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
51
11
17
-
-
-
VDS=48V, VGS=10V,
IDS=33A
nC
Note * : Pulse test ; pulse width 300s, duty cycle2%.
.
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V1.1
3
HY1606D/U/V
Typical Operating Characteristics
Power Dissipation
Drain Current
105
90
75
60
45
30
15
90
80
70
60
50
40
30
20
10
0
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc -
Temperature (°C)
Tc-Case Temperature (°C)
Case
Safe Operation Area
500
100
10us
100us
1ms
Rds(on) Limit
10
1
10ms
DC
TC=25OC
0.1
0.1
1
10
100
500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
1
D = 0.50
0.20
0.10
0.05
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthjc + Tc
0.1
0.02
0.01
Pdm
0.01
t1
t2
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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V1.1
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HY1606D/U/V
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
16
14
80
70
60
50
40
30
20
10
0
VGS= 6,7,8,9,10V
5.5V
12
10
V
GS =10V
5V
8.0
6.0
4.5V
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
18
17
IDS=33A
IDS =250A
15
13
11
9
7
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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V1.1
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HY1606D/U/V
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
170
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 10V
IDS = 33A
Tj=175oC
10
1
Tj=25oC
RON@T=j25o C:10.4m
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
6000
5400
4800
4200
3600
3000
2400
1800
1200
600
VDS= 48V
IDS= 33A
Frequency=1MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
5
10
15
20
7
14 21 28 35 42 49 56
0
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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V1.1
6
HY1606D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.1
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HY1606D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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V1.1
8
HY1606D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
9
HY1606D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
10
HY1606D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
3C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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V1.1
11
HY1606D/U/V
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 C
220 C
220 C
2.5 mm
220 C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
<350
Volume mm3
350-2000
260 C
Volume mm3
>2000
260 C
245 C
245 C
260 C
260 C
250 C
1.6 mm – 2.5 mm
2.5 mm
250 C
245 C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245C
HTRB
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
168Hrs/500Hrs/1000Hrs,Bias@125
96 Hrs, 100 RH, 2atm, 121C
500 Cycles, -55C~150C
C
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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