SFF805 [HY]
SUPER FAST RECTIFIERS; 超快速整流器型号: | SFF805 |
厂家: | HY ELECTRONIC CORP. |
描述: | SUPER FAST RECTIFIERS |
文件: | 总2页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFF801 thru SFF808
REVERSE VOLTAGE - 50 to 600Volts
FORWARD CURRENT - 8.0 Amperes
SUPER FAST RECTIFIERS
ITO-220AC
FEATURES
● Super fast switching time for high efficiency
.138(3.5)
.189(4.8)
● Low forward voltage drop
High current capabiltiy
.122(3.1)
.173(4.4)
.406(10.3)
.386(9.8)
.118(3.0)
.102(2.6)
.118(3.0)
.106(2.7)
● Low reverse leakage current
● Plastic material has UL flammability
classification 94V-0
.610(15.5)
.571(14.5)
.04 MAX
(1.0)
MECHANICAL DATA
●Case: ITO-220AC molded plastic
●Epoxy: UL94V-0 rate flame retadant
●Mounting position :Any
.157(4.0)
.142(3.6)
.114(2.9)
.098(2.5)
.059(1.5)
.571(14.5)
.531(13.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
●Weight: 2.24 grams
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL SFF801 SFF802 SFF803 SFF804 SFF805 SFF806 SFF808
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
100
I(AV)
8.0
A
Rectified Current
@TA =75 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
300
A
Super Imposed on Rated Load(JEDEC Method)
Peak Instantaneous Forward Voltage at 8.0A DC
1.0
35
1.25
40
VF
IR
1.3
50
V
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
μA
150
@TJ=100℃
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
TRR
CJ
nS
pF
40
5
RθJA
℃/W
℃
-55 to + 150
Operating and Storage Temperature Range
TJ,TSTG
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
~ 168 ~
RATING AND CHARACTERTIC CURVES
SFF801 thru SFF808
FIG.1- TYPICAL FORWARD CURRENT DERATING CURVE
10
FIG.2-TYPICAL REVERSE
CHARACTERISTICS
1000
8
TJ=100°C
6
SINGLE PHASE HALF
WAVE 60HZ
4
RESISTIVE OR
100
10
INDUCTIVE LOAD
2
0
0
150
50
100
AMBIENT TEMPERATURE ℃
TJ=25°C
FIG.3-MAXIMUM NON-REPETITVE FORWARD SURGE CURRENT
1.0
0.1
350
300
250
200
150
100
120 140
20
40
60
80 100
PERCENT OF RATED PEAK
REVERSE VOLTAGE(%)
8.3 ms Single Half-Sine-Wave
(JEDEC METOD)
50
1
2
10
20
5
50
100
NUMBER OF CYCLES AT 60HZ
FIG.4-TYPICAL INSTANTAEOUS
FORWARD CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
40
200
SFF801 -
20
10
100
40
SFF804
SFF808
4
20
10
2
SFF805 - SFF806
TJ=25°C
1.0
0.4
4
2
TJ=25°C
PULSE WIDTH 300uS
1% DUTY CYCLE
0.2
0.1
1
0.1 0.2
0.4 1.0
2
4
10 20
40 100
0.6 0.8
1.6
1.8
2.0
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
REVERSE VOLTAGE,(V)
~ 169 ~
相关型号:
SFF80N20MDB
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
SFF80N20MTXV
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
©2020 ICPDF网 联系我们和版权申明