SFF80N10M [SSDI]
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET; 55 AMP （注1 ） / 100伏特， 12个月N沟道沟槽栅MOSFET
| 型号： | SFF80N10M |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF80N10M
SFF80N10Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
55 AMP (note 1) /100 Volts
12 mO
TO-254, TO254Z
N-Channel Trench Gate MOSFET
Note 1: maximum current limited by package
configuration
Features:
·
·
·
·
·
·
·
·
·
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Power Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRM150
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
TO-254 (SFF85N10M)
TO-254Z (SFF85N10Z)
Maximum Ratings
Symbol
Value
100
Units
Drain - Source Voltage
Gate – Source Voltage
VDSS
VGS
V
V
±20
@ TC = 25ºC
@ TC = 125ºC
55 (note 1)
55 (note 1)
ID1
ID2
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
A
A
@ TC = 25ºC
@ TC = 125ºC
110
70
ID3
ID4
75
280
Max. Avalanche current
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
EAR
A
mJ
W
ºC
Repetitive Avalanche Energy
Total Power Dissipation
250
PD
-55 to +200
Operating & Storage Temperature
Maximum Thermal Resistance
TOP & TSTG
0.7
(typ 0.55)
Junction to Case
ºC/W
R0JC
TO-254
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A
DOC
SFF80N10M
SFF80N10Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250µA
100
––
––
V
BVDSS
VGS = 10V, ID = 30A, Tj= 25oC
VGS = 10V, ID = 30A, Tj=125oC
VGS = 10V, ID = 30A, Tj= 200oC
VGS = 10V, ID = 85A, Tj= 25oC
––
––
––
––
9.5
16
22
10
12.0
––
––
Drain to Source On State Resistance
mO
RDS(on)
––
Gate Threshold Voltage
Gate to Source Leakage
VDS = VGS, ID = 250µA
2.0
––
––
––
4.0
V
VGS(th)
IGSS
IDSS
VGS = ±20V
±100
nA
VDS = 80V, VGS = 0V, Tj = 25oC
VDS = 80V, VGS = 0V, Tj = 125oC
VDS = 80V, VGS = 0V, Tj = 200oC
1
50
10
µA
µA
mA
––
––
––
––
Zero Gate Voltage Drain Current
Forward Transconductance
VDS = 15V, ID = 30A, Tj = 25oC
23
––
––
Mho
gfs
VGS = 10V
VDS = 50V
ID = 85A
––
––
––
140
40
40
220
––
––
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
nC
VGS = 10V
VDS = 50V
ID = 85A
––
––
––
––
25
115
75
35
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
185
110
160
nsec
V
RG = 2.5O
110
Diode Forward Voltage
IF = 50A, VGS = 0V
––
1.0
1.5
VSD
70
5.5
0.2
150
10
0.35
nsec
A
µC
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
IRM(rec)
Qrr
IF = 50A, di/dt = 100A/usec
––
VGS = 0V
VDS = 25V
f = 1 MHz
––
––
––
8700
750
450
––
––
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO254
TO254Z
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A
DOC
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