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7014S20JI [IDT]

PLCC-52, Tube;
7014S20JI
型号： 7014S20JI
厂家： INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述：

PLCC-52, Tube

静态存储器 内存集成电路
文件： 总9页 (文件大小：78K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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IDT7014S  
HIGH-SPEED  
4K x 9DUAL-PORT  
STATIC RAM  
Description:  
Features:  
◆
TheIDT7014is ahigh-speed4Kx9Dual-PortStaticRAMdesigned  
to be used in systems where on-chip hardware port arbitration is not  
needed.Thispart lendsitselftohigh-speedapplicationswhichdonotrely  
onBUSYsignalstomanagesimultaneousaccess.  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
◆
– Commercial: 12/15/20/25ns (max.)  
– Industrial:20ns (max.)  
Standard-power operation  
TheIDT7014provides twoindependentports withseparatecontrol,  
address,andI/Opinsthatpermitindependent,asynchronousaccessfor  
readsorwritestoanylocationinmemory.Seefunctionaldescription.  
The IDT7014 utilitizes a 9-bit wide data path to allow for parity at the  
user's option. This feature is especially useful in data communication  
applications where it is necessary to use a parity bit for transmission/  
receptionerrorchecking.  
Fabricated using IDT’s high-performance technology, these Dual-  
Portstypicallyoperateononly750mWofpoweratmaximumaccesstimes  
asfastas12ns.  
◆
– IDT7014S  
Active: 750mW (typ.)  
Fully asynchronous operation from either port  
TTL-compatible; single 5V (±10%) power supply  
Available in 52-pin PLCC and a 64-pin TQFP  
◆
◆
◆
◆
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
◆
The IDT7014 is packaged in a 52-pin PLCC and a 64-pin thin quad  
flatpack,(TQFP).  
FunctionalBlockDiagram  
R/WR  
R/W  
L
OE  
R
OEL  
I/O  
CONTROL  
I/O  
CONTROL  
I/O0R- I/O8R  
I/O0L- I/O8L  
ADDRESS  
DECODER  
ADDRESS  
DECODER  
MEMORY  
ARRAY  
A0R- A11R  
A0L- A11L  
2528 drw 01  
DECEMBER 2008  
1
DSC 2528/16  
©2008IntegratedDeviceTechnology,Inc.  
IDT7014S  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
PinConfiguration(1,2,3)  
11/16/01  
INDEX  
7
6 5 4 3 2  
5251 50 49 48 47  
46  
A
A
6L  
7L  
1
8
9
A
7R  
8R  
9R  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
A
A
A
A
A
A
8L  
9L  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
10R  
11R  
A
A
10L  
11L  
IDT 7014J  
J52-1(4)  
OE  
GND  
R/W  
R
OE  
L
VCC  
R
52-Pin PLCC  
Top View(5)  
R/W  
L
GND  
I/O8R  
I/O7R  
I/O6R  
I/O5R  
GND  
I/O8L  
I/O7L  
I/O6L  
21 2223 24 2526 27 2829 30 3132 33  
,
2528 drw 02  
11/16/01  
INDEX  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
A
A
A
A
6L  
7L  
8L  
9L  
48  
47  
46  
A
A
A
A
A
A
6R  
7R  
8R  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
9R  
A10L  
10R  
11R  
A11L  
IDT7014PF  
PN64-1(4)  
OE  
N/C  
L
OE  
R
N/C  
GND  
N/C  
R/W  
N/C  
GND  
I/O8R  
I/O7R  
I/O6R  
VCC  
64-Pin TQFP  
Top View(5)  
N/C  
R/W  
L
R
N/C  
GND  
I/O8L  
I/O7L  
I/O6L  
16  
,
2528 drw 03  
NOTES:  
1. All VCC pins must be connected to power supply.  
2. All GND pins must be connected to ground supply.  
3. J52-1 package body is approximately .75 in x .75 in. x .17 in.  
PN64-1 package body is approximately 14mm x 14mm x 1.4mm.  
4. This package code is used to reference the package diagram.  
5. This text does not indicate the orientation of the actual part-marking  
2
IDT7014S/L  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AbsoluteMaximumRatings(1)  
MaximumOperatingTemperature  
andSupplyVoltage(1,2)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
Grade  
Ambient  
GND  
Vcc  
(2)  
Temperature  
V
TERM  
Terminal Voltage  
with Respect  
to GND  
-0.5 to +7.0  
V
Commercial  
Industrial  
0OC to +70OC  
0V  
0V  
5.0V  
5.0V  
+
+
10%  
10%  
-40OC to +85OC  
(2)  
TERM  
V
Terminal Voltage  
-0.5 to +VCC  
-55 to +125  
V
2528 tbl 02  
Temperature  
Under Bias  
oC  
TBIAS  
NOTES:  
1. This is the parameter TA. This is the "instant on" case temperature.  
Storage  
-65 to +150  
50  
oC  
T
STG  
Temperature  
DC Output  
Current  
mA  
IOUT  
RecommendedDCOperating  
Conditions  
2528 tbl 01  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns  
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.  
Symbol  
Parameter  
Supply Voltage  
GND Ground  
Min.  
Typ.  
Max. Unit  
VCC  
4.5  
5.0  
5.5  
0
V
V
V
0
0
V
IH  
Input High Voltage  
Input Low Voltage  
2.2  
6.0(2)  
0.8  
____  
-0.5(1)  
V
____  
VIL  
2528 tbl 03  
NOTES:  
1. VIL > -1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 10%.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1) (VCC = 5.0V ± 10%)  
7014S  
Symbol  
Parameter  
Input Leakage Current  
Test Conditions  
CC = 5.5V, VIN = 0V to VCC  
OUT = 0V to VCC  
OL = +4mA  
OH = -4mA  
Min.  
Max.  
Unit  
µA  
µA  
V
___  
|ILI|  
V
10  
10  
___  
___  
|ILO  
|
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
V
VOL  
I
0.4  
___  
VOH  
I
2.4  
V
2528 tbl 04  
NOTE:  
1. At VCC < 2.0V input leakages are undefined.  
3
6.42  
IDT7014S  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(VCC = 5V ± 10%)  
7014S12  
Com'l Only  
7014S15  
Com'l Only  
Symbol  
Parameter  
Dynamic Operating  
Current  
(Both Ports Active)  
Test Condition  
Outputs Open  
Version  
COM'L  
IND  
Typ. Max  
160 250  
Typ.  
160  
Max  
250  
Unit  
ICC  
mA  
S
S
(1)  
f = fMAX  
____  
____  
____  
____  
2528 tbl 05a  
7014S20  
Com'l & Ind  
7014S25  
Com'l Only  
Symbol  
Parameter  
Test Condition  
Outputs Open  
Version  
Typ.  
155  
155  
Max  
Typ.  
Max.  
Unit  
ICC  
Dynamic Operating  
Current  
(Both Ports Active)  
mA  
COM'L  
IND  
S
S
245  
260  
150  
240  
(1)  
f = fMAX  
____  
____  
2528 tbl 05b  
NOTES:  
1. At f = fmax, address inputs are cycling at the maximum read cycle of 1/tRC using the "AC Test Conditions" input levels of GND to 3V.  
5V  
AC Test Conditions  
5V  
Input Pulse Levels  
GND to 3.0V  
3ns Max.  
893Ω  
893Ω  
5pF*  
Input Rise/Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
Output Load  
1.5V  
DATAOUT  
DATAOUT  
1.5V  
30pF  
347Ω  
347Ω  
Figures 1,2 and 3  
,
2528 tbl 06  
2528 drw 04  
2528 drw 05  
Figure 1. AC Output Test Load.  
Figure 2. Output Test Load  
(for tHZ, tWZ, and tOW)  
Capacitance(1)  
*Includingscopeandjig.  
(TA = +25°C, f = 1.0MHz) TQFP Package Only  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
IN = 3dV  
OUT = 3dV  
Max. Unit  
8
CIN  
V
9
pF  
- 10pF is the I/O capacitance  
of this device, and 30pF is the  
AC Test Load Capacitance  
7
6
COUT  
V
10  
pF  
2528 tbl 07  
NOTES:  
5
4
3
t
AA  
1. This parameter is determined by device characteristics but is not production  
tested.  
2. 3dv references the interpolated capacitance when the input and output signals  
swith from 0V to 3V or from 3V to 0V.  
(Typical, ns)  
2
1
0
20 40 60 80 100 120 140 160 180 200  
Capacitance (pF)  
-1  
,
2528 drw 06  
Figure 3. Typical Output Derating (Lumped Capacitive Load).  
4
IDT7014S/L  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltage  
7014S12  
Com'l Only  
7014S15  
Com'l Only  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
____  
____  
t
RC  
AA  
AOE  
OH  
LZ  
HZ  
Read Cycle Time  
12  
15  
ns  
ns  
ns  
ns  
ns  
____  
____  
t
Address Access Time  
Output Enable Access Time  
Output Hold from Address Change  
Output Low-Z Time(1,2)  
12  
15  
____  
____  
t
8
8
____  
____  
t
3
3
____  
____  
t
3
3
Output High-Z Time(1,2)  
7
7
ns  
____  
____  
t
2528 tbl 08a  
7014S20  
Com'l & Ind  
7014S25  
Com'l Only  
Symbol  
READ CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
t
RC  
AA  
AOE  
OH  
LZ  
HZ  
Read Cycle Time  
20  
25  
ns  
ns  
ns  
ns  
ns  
____  
____  
t
Address Access Time  
Output Enable Access Time  
Output Hold from Address Change  
Output Low-Z Time(1,2)  
20  
25  
____  
____  
t
10  
12  
____  
____  
t
3
3
____  
____  
t
3
3
Output High-Z Time(1,2)  
9
11  
ns  
____  
____  
t
2528 tbl 08b  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).  
2. This parameter is determined by device characterization, but is not production tested.  
5
6.42  
IDT7014S  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Read Cycle No. 1, Either Side(1,2)  
tRC  
ADDRESS  
tAA  
tOH  
tOH  
DATAOUT  
PREVIOUS DATA VALID  
DATA VALID  
2528 drw 07  
Timing Waveform of Read Cycle No. 2, Either Side(1, 3)  
t
AOE  
OE  
t
HZ  
tLZ  
VALID DATA  
DATAOUT  
2528 drw 08  
NOTES:  
1. R/W = VIH for Read Cycles.  
2. OE = VIL.  
3. Addresses valid prior to OE transition LOW.  
Timing Waveform of Write with Port-to-Port Read(1,2)  
tWC  
ADDR"A"  
MATCH  
tWP  
R/W"A"  
tDW  
tDH  
DATAIN "A"  
ADDR"B"  
VALID  
MATCH  
tWDD  
DATAOUT "B"  
VALID  
tDDD  
2528 drw 09  
NOTES:  
1. R/W"B" = VIH, read cycle pass through.  
2. All timing is the same for left and right ports. Port "A" may be either left or right port. Port "B" is opposite from port "A".  
6
IDT7014S/L  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltage  
7014S12  
Com'l Only  
7014S15  
Com'l Only  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
WDD  
DDD  
Write Cycle Time  
12  
10  
0
15  
14  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Address Valid to End-of-Write  
Address Set-up Time  
Write Pulse Width  
t
t
10  
1
12  
1
t
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(3)  
t
8
10  
____  
____  
t
7
7
____  
____  
t
0
0
(1,2)  
____  
____  
t
Write Enable to Output in High-Z  
Output Active from End-of-Write(1,2,3)  
7
7
____  
____  
t
0
0
(4)  
____  
____  
t
Write Pulse to Data Delay  
25  
22  
30  
25  
Write Data Valid to Read Data Delay(4)  
ns  
____  
____  
t
2528 tbl 09a  
7014S20  
Com'l & Ind  
7014S25  
Com'l Only  
Symbol  
WRITE CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
WDD  
DDD  
Write Cycle Time  
20  
15  
0
25  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Address Valid to End-of-Write  
Address Set-up Time  
Write Pulse Width  
t
t
15  
2
20  
2
t
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(3)  
t
12  
15  
____  
____  
t
9
11  
____  
____  
t
0
0
(1,2)  
____  
____  
t
Write Enable to Output in High-Z  
Output Active from End-of-Write(1, 2,3)  
9
11  
____  
____  
t
0
0
(4)  
____  
____  
t
Write Pulse to Data Delay  
40  
30  
45  
35  
Write Data Valid to Read Data Delay(4)  
ns  
____  
____  
t
2528 tbl 09b  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).  
2. This parameter is guaranteed by device characterization, but is not production tested.  
3. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage  
and temperature, the actual tDH will always be smaller than the actual tOW.  
4. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write With Port-to-Port Read”.  
7
6.42  
IDT7014S  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Write Cycle(1,2,3,4,5)  
ADDRESS  
OE  
tAW  
(5)  
t
AS  
tWP  
tWR  
R/W  
(4)  
(4)  
tWZ  
tOW  
t
HZ  
DATAOUT  
(3)  
(3)  
t
DW  
tDH  
DATAIN  
2528 drw 10  
NOTES:  
1. R/W must be HIGH during all address transitions.  
2. tWR is measured from R/W going HIGH to the end of write cycle.  
3. During this period, the I/O pins are in the output state, and input signals must not be applied.  
4. Transition is measured 0mV from the Low or High-impedance voltage with the Output Test Load (Figure 2).  
5. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be  
placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as  
the specified tWP.  
Truth Table I – Read/Write Control  
FunctionalDescription  
The IDT7014 provides two ports with separate control, address,  
and I/O pins that permit independent access for reads or writes to  
any location in memory. It lacks the chip enable feature of CMOS Dual  
Ports,thusitoperatesinactivemodeassoonaspowerisapplied.Each  
porthasitsownOutputEnablecontrol(OE).Inthereadmode,theport’s  
OEturnsontheoutputdriverswhensetLOW. Theuserapplicationshould  
avoidsimultaneouswriteoperationstothesamememorylocation.There  
isnoon-chiparbitrationcircuitrytoresolvewritepriorityandpartialdata  
frombothportsmaybewritten.READ/WRITEconditionsareillustrated  
in Table 1.  
Left or Right Port(1)  
R/W OE  
D0-8  
Function  
L
H
X
X
L
DATAIN Data written into memory  
DATAOUT Data in memory output on port  
H
Z
High-impedance outputs  
2528 tbl 10  
NOTE:  
1. AOL - A11L is not equal to AOR - A11R.  
'H' = HIGH,'L' = LOW, 'X' = Don’t Care, and 'Z' = HIGH Impedance.  
8
IDT7014S/L  
High-Speed 4K x 9 Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
OrderingInformation  
999  
A
A
A
XXXX  
A
Device Type Power Speed Package  
Process/  
Temperature  
Range  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)  
Blank  
I(1)  
G(2)  
Green  
PF  
J
64-pin TQFP (PN64-1)  
52-pin PLCC (J52-1)  
12  
15  
20  
25  
Commercial Only  
Commercial Only  
Commercial & Industrial  
Commercial Only  
Speed in nanoseconds  
S
Standard Power  
36K (4K x 9-Bit) Dual-Port RAM  
7014  
2528 drw 11  
NOTES:  
1. Industrial temperature: for other speeds, packages and powers contact your sales office.  
2. Green parts avaliable. For specific speeds, packages and powers contact your local sales office.  
DatasheetDocumentHistory  
01/06/99:  
Initiateddatasheetdocumenthistory  
Convertedtonewformat  
Cosmeticandtypographicalcorrections  
Addedadditionalnotestopinconfigurations  
Changeddrawingformat  
CorrectedDSCnumber  
AddedIndustrialTemperatureRangesanddeletedcorrespondingnotes  
Replaced IDT logo  
Page 2  
Page 1  
06/03/99:  
03/10/00:  
Page 1  
Made corrections todrawing  
Changed±200mVto0mVinnotes  
Page 6  
Page 3  
Madechanges todrawings  
Increasedstoragetemperatureparameter  
ClarifiedTAparameter  
Addeddaterevisionforpinconfiguration  
RemovedIndustrialtempvalues andcolumnheadings for15& 25ns speeds from  
DCandACElectricalCharacteristics  
05/19/00:  
10/16/01:  
Page 2  
Pages 4, 5 & 7  
Page 9  
RemovedIndustrialtempofferingfrom15& 25nsorderinginformation  
AddedIndustrialtempfootnotetoorderinginformation  
Replaced TM logo with ® logo  
Pages 1 & 9  
Page 1  
04/04/06:  
12/11/08:  
Addedgreenavailabilitytofeatures  
Page 9  
Page 9  
Addedgreenindicatortoorderinginformation  
Removed "IDT" from orderable part number  
CORPORATE HEADQUARTERS  
6024 Silver Creek Valley Road  
San Jose, CA 95138  
for SALES:  
for Tech Support:  
408-284-2794  
DualPortHelp@idt.com  
800-345-7015 or 408-284-8200  
fax: 408-284-2775  
www.idt.com  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
9
6.42  

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 HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM
IDT

7014S25JGI8

 HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM
IDT

7014S25JI

 Dual-Port SRAM, 4KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
IDT
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