709149S8PFGI [IDT]

HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM;
709149S8PFGI
型号: 709149S8PFGI
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM

静态存储器
文件: 总10页 (文件大小:618K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IDT709149S  
HIGH-SPEED 36K (4K x 9-BIT)  
SYNCHRONOUS PIPELINED  
DUAL-PORT SRAM  
Features  
Architecture based on Dual-Port SRAM cells  
Synchronous operation  
– Allows full simultaneous access from both ports  
High-speed clock-to-data output times  
– Commercial:8/10/12ns(max.)  
– Industrial: 10ns (max.)  
– 4ns setup to clock, 1ns hold on all control, data, and  
address inputs  
– Data input, address, and control registers  
– Fast 8ns clock to data out  
Low-power operation  
TTL-compatible, single 5V (±10%) power supply  
Clock Enable feature  
– IDT709149S  
Active: 1500mW (typ.)  
Guaranteed data output hold times  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Standby:75mW(typ.)  
4K X 9 bits  
13ns cycle time, 76MHz operation in pipeline mode  
– Self-timed write allows for fast cycle times  
Green parts available, see ordering information  
Functional Block Diagram  
I/O0-8L  
I/O0-8R  
WRITE  
WRITE  
MEMORY  
LOGIC  
LOGIC  
FT/PIPED  
R
ARRAY  
0/1  
0
SENSE  
AMPS  
SENSE  
AMPS  
1
DECODERDECODER  
REG  
en  
REG  
en  
OE  
CLK  
CLKEN  
L
OE  
CLK  
CLKEN  
R
L
R
L
R
Self-  
Self-  
timed  
Write  
Logic  
timed  
Write  
Logic  
R/WR  
R/W  
L
REG  
REG  
CEL  
CER  
A0L-A11L  
A0R-A11R  
3494 drw 01  
APRIL 2015  
1
DSC-3494/7  
©2015 Integrated Device Technology, Inc.  
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
TheIDT709149utilizesa9-bitwidedatapathtoallowforparityatthe  
user's option. This feature is especially useful in data communication  
applications where it is necessary to use a parity bit for transmission/  
receptionerrorchecking.  
Description  
The IDT709149 is a high-speed 4K x 9 bit synchronous Dual-Port  
SRAM.ThememoryarrayisbasedonDual-Portmemorycells toallow  
simultaneous access from both ports. Registers on control, data, and  
address inputs provide low set-up and hold times. The timing latitude  
providedbythisapproachwillallowsystemstobedesignedwithveryshort  
cycle times. This device has been optimized for applications having  
unidirectionaldatafloworbi-directionaldataflowinbursts,byutilizinginput  
dataregisters.  
FabricatedusingCMOShigh-performancetechnology,theseDual-  
Portstypicallyoperateononly800mWofpowerat maximumhigh-speed  
clock-to-data output times as fast as 8ns. An automatic power down  
feature,controlledby CE,permitstheon-chipcircuitryofeachporttoenter  
a very low standby power mode.  
The IDT709149 is packaged in an 80-pin TQFP.  
Pin Configurations(1,2,3)  
Reference  
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61  
N/C  
1
2
60  
N/C  
59  
A
A
A
A
6L  
7L  
8L  
9L  
A
A
A
7R  
8R  
9R  
3
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
4
5
A
A
10R  
6
A
A
10L  
11R  
7
11L  
N/C  
IDT709149PF  
8
N/C  
OE  
OE  
R
(4)  
PN80  
9
L
FT/PIPED  
R
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
V
CC  
CC  
GND  
80-Pin TQFP  
GND  
V
(5)  
Top View  
R/W  
L
N/C R  
R/W  
N/  
N/C  
C
N/C  
CE  
L
CER  
GND  
I/O8L  
I/O7L  
I/O6L  
N/C  
GND  
I/O8R  
I/O7R  
I/O6R  
N/C  
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40  
3494 drw 02  
NOTES:  
1. All VCC pins must be connected to power supply.  
2. All ground pins must be connected to ground supply.  
3. Package body is approximately 14mm x 14mm x 1.4mm.  
4, This package code is used to reference the package diagram.  
5. This text does not indicate the orientaion of the actual part-marking.  
6.42  
2
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Absolute Maximum Ratings(1)  
Maximum OperatingTemperature  
andSupplyVoltage(1)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
Grade  
GND  
Vcc  
(2)  
Ambient Temperature  
0OC to +70OC  
V
TERM  
Terminal Voltage  
with Respect  
to GND  
-0.5 to +7.0  
V
Commercial  
Industrial  
0V  
0V  
5.0V  
5.0V  
+
+
10%  
(2)  
TERM  
V
Terminal Voltage  
-0.5 to VCC  
-55 to +125  
V
oC  
-40OC to +85OC  
10%  
3494 tbl 02  
Temperature  
Under Bias  
T
BIAS  
NOTES:  
1. This is the parameter TA. This is the "instant on" case temperature.  
Storage  
-65 to +150  
50  
oC  
T
STG  
Temperature  
IOUT  
DC Output Current  
mA  
3494 tbl 01  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the  
operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
Recommended DC Operating  
Conditions  
Symbol  
Parameter  
Supply Voltage  
Min.  
4.5  
Typ.  
Max. Unit  
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns  
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.  
V
CC  
5.0  
5.5  
V
V
V
GND  
Ground  
0
0
____  
0
V
IH  
Input High Voltage  
Input Low Voltage  
2.2  
-0.5(1)  
6.0(2)  
0.8  
____  
V
IL  
V
3494 tbl 03  
Capacitance (TA = +25°C, f = 1.0MHz)  
NOTES:  
1. VIL > -1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 10%.  
Symbol  
Parameter  
Conditions  
IN = 3dV  
OUT = 3dV  
Max. Unit  
C
IN  
Input Capacitance  
Output Capacitance  
V
8
9
pF  
COUT  
V
pF  
3494 tbl 04  
NOTES:  
1. These parameters are determined by device characterization, but are not produc-  
tion tested.  
2. 3dV references the interpolated capacitance when the input and output switch from  
0V to 3V or from 3V to 0V.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)  
709149S  
Symbol  
|ILI  
|ILO  
Parameter  
Input Leakage Current(1)  
Test Conditions  
CC = 5.5V, VIN = 0V to VCC  
OUT = 0V to VCC  
Min.  
Max.  
Unit  
µA  
µA  
V
___  
___  
___  
|
V
V
10  
10  
|
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
V
OL  
I
OL = +4mA  
0.4  
___  
V
OH  
I
OH = -4mA  
2.4  
V
3494 tbl 05  
NOTE:  
1. At VCC < 2.0V, input leakages are undefined  
6.342  
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(4) (VCC = 5V ± 10%)  
709149S8  
709149S10  
709149S12  
Com'l Only  
Com'l Only  
Com'l  
& Ind  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
IND  
Typ.  
200  
Max.  
320  
Typ.  
Max.  
310  
340  
150  
175  
220  
250  
Typ.  
180  
Max.  
300  
Unit  
ICC  
Dynamic Operating  
Current  
mA  
190  
190  
90  
CE  
L
and CE = VIL,  
R
Outputs(1D) isabled  
____  
____  
____  
____  
(Both Ports Active)  
f = fMAX  
ISB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
IND  
100  
____  
150  
____  
85  
____  
140  
____  
mA  
mA  
mA  
CE and CE = VIH  
R
f = LfMAX  
(1)  
90  
(3)  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
180  
230  
170  
170  
160  
210  
CE"A" = V and CE = VIH  
Active PoIrLt Outputs"BD"isabled,  
(1)  
____  
____  
____  
____  
f=fMAX  
ISB3  
Full Standby Current  
(Both Ports - All  
CEL and  
COM'L  
IND  
5
15  
5
5
15  
20  
5
15  
CE > V - 0.2V,  
CMOS Level Inputs)  
V
R> VCCCC- 0.2V or  
VIN < 0.2V, f = 0(2)  
____  
____  
____  
____  
ISB4  
Full Standby Current  
(One Port - All  
mA  
COM'L  
IND  
170  
220  
160  
160  
210  
240  
150  
200  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(3)  
____  
____  
____  
____  
CMOS Level Inputs)  
V
IN > VCC - 0.2V or V < 0.2V  
Active Port Outputs DIiNsabled,  
(1)  
f = fMAX  
3494 tbl 06  
NOTES:  
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCLK, using "AC TEST CONDITIONS" at input levels of  
GND to 3V.  
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.  
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".  
4. Vcc = 5V, TA = 25°C for Typ, and are not production tested. ICC DC = 150mA (Typ).  
AC Test Conditions  
Input Pulse Levels  
GND to 3.0V  
3ns Max.  
Input Rise/Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
Output Load  
1.5V  
1.5V  
Figures 1,2 and 3  
8
7
6
9pF is the I/O capacitance  
of this device, and 30pF is the  
AC Test Load Capacitance  
3494 tbl 07  
5V  
5V  
5
4
3
2
1
tCD  
(Typical, ns)  
893  
893Ω  
DATAOUT  
DATAOUT  
30pF  
5pF*  
347Ω  
347Ω  
0
,
20 40 60 80 100 120 140 160 180 200  
Capacitance (pF)  
,
3494 drw 04  
-1  
3494 drw 03  
Figure 1. AC Output Test load.  
Figure 2. Output Test Load  
(For tCKLZ, tCKHZ, tOLZ, and tOHZ).  
*Including scope and jig.  
3494 drw 05  
Figure 3. Typical Output Derating (Lumped Capacitive Load).  
6.42  
4
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the Operating Temperature Range—  
(Read and Write Cycle Timing)  
709149S8  
709149S10  
Com'l  
709149S12  
Com'l Only  
Com'l Only  
& Ind  
Symbol  
Parameter  
Clock Cycle Time (Flow-Through)(3)  
Clock Cycle Time (Pipelined)(3)  
Clock High Time (Flow-Through)(3)  
Clock Low Time (Flow-Through)(3)  
Clock High Time (Pipelined)(3)  
Clock Low Time (Pipelined)(3)  
Clock to Data Valid (Flow-Through)(3)  
Clock to Data Valid (Pipelined)(3)  
Registered Signal Set-up Time  
Registered Signal Hold Time  
Min.  
16  
13  
6
Max.  
Min.  
20  
15  
7
Max.  
Min.  
20  
16  
8
Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
CYC1  
CYC2  
CH1  
CL1  
CH2  
CL2  
CD1  
CD2  
t
t
t
6
7
8
t
6
6
6
t
6
____  
6
____  
6
____  
t
12  
15  
20  
____  
____  
____  
t
8
____  
10  
____  
12  
____  
tS  
4
1
1
4
1
1
5
1
1
____  
____  
____  
____  
____  
____  
____  
____  
____  
tH  
t
DC  
CKLZ  
CKHZ  
OE  
OLZ  
OHZ  
SCK  
HCK  
CWDD  
Data Output Hold After Clock High  
(1,2)  
t
Clock High to Output Low-Z  
2
____  
2
____  
2
____  
(1,2)  
t
Clock High to Output High-Z  
7
7
9
____  
____  
____  
t
Output Enable to Output Valid  
Output Enable to Output Low-Z(1,2)  
8
____  
8
____  
10  
____  
t
0
____  
0
____  
0
____  
(1,2)  
t
Output Disable to Output High-Z  
7
____  
7
____  
9
____  
t
Clock Enable, Disable Set-Up Time  
Clock Enable, Disable Hold Time  
4
4
5
____  
____  
____  
t
1
____  
1
____  
1
____  
t
Write Port Clock High to Read Data Delay  
25  
30  
35  
ns  
3494 tbl 08  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. This parameter is guaranteed by device characterization, but is not production tested.  
3. The Pipelined output parameters (tCYC2, tCD2) always apply to the Left Port. The Right Port uses the Pipelined tCYC2 and tCD2 when FT/PIPEDR = VIH and the Flow-  
Through parameters (tCYC1, tCD1) when FT/PIPEDR = VIL.  
6.542  
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Read Cycle for Flow-Through Output on Right Port  
(FT/PipedR = VIL)  
t
CYC1  
t
CH1  
tCL1  
CLK  
CLKEN  
CE  
tSCK  
t
HCK  
tSCK  
tS  
t
H
R/W  
ADDRESS  
DATAOUT  
An  
An + 1  
An + 2  
An + 3  
(1)  
tDC  
tCKHZ  
t
CD1  
Qn  
Qn + 1  
Qn + 1  
(1)  
tCKLZ  
(1)  
(1)  
tOHZ  
tOLZ  
tOE  
OE  
3494 drw 06  
Timing Waveform of Left Port Write to Flow-Through Right Port Read  
(FT/PipedR = VIL)(2,3)  
CLK "L"  
R/W "L"  
NO  
ADDR "L"  
DATA IN "L"  
CLK "R"  
MATCH  
VALID  
MATCH  
VALID  
t
CCS  
R/W "R"  
NO  
MATCH  
ADDR "R"  
DATA OUT "R"  
NOTES:  
MATCH  
tCWDD  
tCD1  
VALID  
VALID  
tDC  
3494 drw 07  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. CEL = CER = VIL, CLKENL = CLKENR = VIL  
3. OE = VIL for the reading port, port 'R'.  
6.42  
6
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Read Cycle for Pipelined Operation  
(Left Port; Right Port when FT/PipedR = VIH)(3)  
tCYC2  
tCH2  
tCL2  
CLK  
tS  
tH  
tH  
tS  
CE  
R/W  
tH  
tS  
An  
An + 1  
An + 2  
Qn  
An + 3  
ADDRESS  
(1 Latency)  
tDC  
tCD2  
tCD2  
DATAOUT  
Qn + 1  
Qn + 2  
(1)  
(1)  
tCKLZ  
(1)  
t
OHZ  
tOLZ  
OE (2)  
tOE  
3494 drw 08  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.  
3. CLKENL and CLKENR = VIL.  
6.742  
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)  
tCYC2  
tCH2  
tCL2  
CLK  
CE  
t
S
tH  
t
S
tH  
R/W  
tS  
tH  
An + 4  
An + 3  
An  
S
An +1  
An + 2  
An + 2  
ADDRESS  
t
tH  
tS  
t
H
DATAIN  
Dn + 2  
(1)  
(1)  
tCKLZ  
tCD2  
tCD2  
(2)  
t
CKHZ  
Qn + 3  
Qn  
DATAOUT  
READ  
NOP(3)  
WRITE  
READ  
3494 drw 09  
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)  
t
CYC2  
tCH2  
tCL2  
CLK  
tS  
tH  
CE  
t
S
tH  
R/W  
t
S
tH  
An + 4  
An  
An +1  
An + 2  
An + 3  
Dn + 3  
An + 5  
ADDRESS  
DATAIN  
tS  
tH  
t
S
tH  
Dn + 2  
(1)  
tCKLZ  
tCD2  
tCD2  
(2)  
Qn  
Qn + 4  
DATAOUT  
(1)  
t
OHZ  
OE  
WRITE  
READ  
READ  
3494 drw 10  
NOTES:  
1. Transitionismeasured0mVfromLoworHigh-impedancevoltagewiththeOutputTestLoad(Figure2).  
2. Outputstate(High,Low,orHigh-impedance)isdeterminedbythepreviouscyclecontrolsignals.  
3. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.  
6.42  
8
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Functional Description  
possible realized cycle times. Clock enable inputs are provided to stall  
the operation of the address and data input registers without introduc-  
ing clock skew for very fast interleaved memory applications.  
A HIGH on the CE input for one clock cycle will power down the  
internal circuitry to reduce static power consumption.  
TheIDT709149providesatruesynchronousDual-PortStaticRAM  
interface. Registered inputs provide very short set-up and hold times  
onaddress, data, andallcriticalcontrolinputs. Allinternalregistersare  
clockedontherisingedgeoftheclock signal. Anasynchronousoutput  
enable is provided to ease asynchronous bus interfacing.  
When piplelined mode is enabled, two cycles are required with  
CE LOW to reactivate the outputs.  
The internal write pulse width is dependent only on the low to high  
transitions of the clock signal to initiate a write allowing the shortest  
Truth Table I: Read/Write Control(1)  
Inputs  
Synchronous(3)  
Outputs  
Asynchronous  
Mode  
CLK  
R/W  
X
I/O0-8  
High-Z  
DATAIN  
DATAOUT  
High-Z  
CE  
H
L
OE  
X
Deselected—Power Down  
L
X
Selected and Write Enable  
L
H
L
Read Selected and Data Output Enabled Read (1 Latency)  
Data I/O Disabled  
X
X
H
3494 tbl 09  
Truth Table II: Clock Enable Function Table(1)  
Inputs  
Register Inputs  
Register Outputs(4)  
ADDR DATAOUT  
Operating Mode  
Load "1"  
CLK(3)  
ADDR  
DATAIN  
CLKEN(2)  
L
L
H
L
H
L
H
L
H
L
X
Load "0"  
Hold (do nothing)  
H
H
X
X
X
X
NC  
NC  
NC  
NC  
3494 tbl 10  
NOTES:  
1. 'H' = HIGH voltage level steady state, 'h' = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition, 'L' = LOW voltage level steady state 'l' = LOW voltage  
level one set-up time prior to the LOW-to-HIGH clock transition, 'X' = Don't care, 'NC' = No change  
2. CLKEN = VIL must be clocked in during Power-Up.  
3. Control signals are initialted and terminated on the rising edge of the CLK, depending on their input level. When R/W and CE are LOW, a write cycle is initiated on the LOW-  
to-HIGH transition of the CLK. Termination of a write cycle is done on the next LOW-to-HIGH transistion of the CLK.  
4. The register outputs are internal signals from the register inputs being clocked in or disabled by CLKEN.  
6.942  
IDT709149S  
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Ordering Information  
XXXX  
A
999  
A
A
A
A
Device  
Type  
Power Speed  
Package  
Process/  
Temperature  
Range  
Blank  
8
Tube or Tray  
Tape and Reel  
Blank  
I(1)  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)  
G(2)  
PF  
Green  
80-pin TQFP (PN80)  
Commercial Only  
Commercial & Industrial  
Commercial Only  
8
10  
12  
Speed in nanoseconds  
Standard Power  
S
709149  
36K (4K x 9-Bit) Synchronous  
Pipelined Dual-Port RAM  
3494 drw 11  
NOTE:  
1. Contactyourlocalsalesofficeforindustrialtemprangeforotherspeeds,packagesandpowers.  
2. Greenpartsavailable.Forspecificspeeds,packagesandpowerscontactyourlocalsalesoffice.  
Datasheet Document History  
3/8/99:  
Initiated datasheet document history  
Converted to new format  
Cosmetic and typographical corrections  
Added additional notes to pin configurations  
Changed drawing format  
6/3/99:  
9/1/99:  
RemovedPreliminary  
11/10/99:  
5/24/00:  
Replaced IDT logo  
Page 3 Increasedstoragetemperatureparameter  
ClarifiedTA parameter  
Page 5 DCElectricalparameters–changedwordingfrom"open"to"disabled"  
Changed±200mVto0mVinnotes  
01/24/02:  
Page 2 Added date revision for pin configuration  
Page 3, 4 & 5 Removed Industrial temp footnote from all tables  
Page4AddedIndustrialtempto10nsspeedinthecolumnheadingandvaluesofDCElectricalCharacteristics  
Page5CorrectedatypointhecolumnheadingofACElectricalCharacteristics  
Page5AddedIndustrialtempto10nsspeedinthecolumnheadingofACElectricalCharacteristics  
Page10AddedIndustrialtempto10nsofferinginorderinginformation  
Pages 1& 10 Replaced TM logo with ® logo  
01/29/09:  
04/08/15:  
Page 10 Removed "IDT" from orderable part number  
Page 2 RemovedIDTinreferencetofabrication  
Page 2 &10 The package code PN80-1 changed to PN80 to match standard package codes  
Page 4 CorrectedtypointheTypicalOutputDerating(LumpedCapitiveLoad)diagram  
Page 10 AddedTapeandReelandGreenindicatorswiththeirfootnoteannotationstotheOrderingInformation  
CORPORATE HEADQUARTERS  
6024 Silver Creek Valley Road  
San Jose, CA 95138  
for SALES:  
for Tech Support:  
800-345-7015 or 408-284-8200  
fax: 408-284-2775  
www.idt.com  
408-284-2794  
DualPortHelp@idt.com  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
6.42  
10  

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