8SLVD1212NLGI/W [IDT]

1:12, LVDS Output Fanout Buffer;
8SLVD1212NLGI/W
型号: 8SLVD1212NLGI/W
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

1:12, LVDS Output Fanout Buffer

文件: 总21页 (文件大小:555K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1:12, LVDS Output Fanout Buffer  
8SLVD1212  
Datasheet  
General Description  
Features  
The 8SLVD1212 is a high-performance differential LVDS fanout  
buffer. The device is designed for the fanout of high-frequency, very  
low additive phase-noise clock and data signals. The 8SLVD1212 is  
characterized to operate from a 2.5V power supply. Guaranteed  
output-to-output and part-to-part skew characteristics make the  
8SLVD1212 ideal for those clock distribution applications demanding  
well-defined performance and repeatability. Two selectable  
differential inputs and twelve low skew outputs are available. The  
integrated bias voltage reference enables easy interfacing of  
single-ended signals to the device inputs. The device is optimized for  
low power consumption and low additive phase noise.  
• Twelve low skew, low additive jitter LVDS output pairs  
• Two selectable, differential clock input pairs  
• Differential PCLK, nPCLK pairs can accept the following  
differential input levels: LVDS, LVPECL, CML  
• Maximum input clock frequency: 2GHz (maximum)  
• LVCMOS/LVTTL interface levels for the control input select pins  
• Output skew: 45ps (max)  
• Propagation delay: 310ps (typical)  
• Low additive phase jitter, RMS; fREF = 156.25MHz,  
10kHz - 20MHz: 77fs (typical)  
• Maximum device current consumption (IDD): 213mA  
• 2.5V supply voltage  
• Lead-free (RoHS 6), 40-Lead VFQFN packaging  
• -40°C to 85°C ambient operating temperature  
Pin Assignment  
38 37 36 35 34 33 32 31  
39  
40  
1
2
SEL  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
GND  
nQ7  
PCLK1  
nPCLK1  
VREF1  
VDD  
3
Q7  
nQ6  
Q6  
4
5
8SLVD1212  
VDD  
nQ5  
Q5  
6
VREF0  
nPCLK0  
7
nQ4  
Q4  
8
PCLK0  
nc  
9
GND  
10  
11 12  
13 14  
16 17 18 19 20  
15  
40-Lead VFQFN  
6.0mm x 6.0mm x 0.9mm package body  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Block Diagram  
Q0  
nQ0  
Voltage  
Reference  
VREF0  
Q1  
nQ1  
VDD  
Q2  
nQ2  
PLCK0  
Q3  
nPLCK0  
nQ3  
Q4  
nQ4  
fREF  
GND  
VDD  
Q5  
nQ5  
Q6  
PLCK1  
nQ6  
nPLCK1  
VDD  
Q7  
nQ7  
GND  
SEL  
Q8  
nQ8  
Q9  
GND  
nQ9  
Q10  
nQ10  
Voltage  
Reference  
VREF1  
Q11  
nQ11  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Pin Descriptions and Characteristics  
1
Table 1. Pin Descriptions  
Number  
Name  
SEL  
Type  
Description  
Pullup/  
Pulldown  
Reference select control pin. See Table 3 for function. LVCMOS/LVTTL  
interface levels.  
1
2
3
Input  
Input  
Input  
PCLK1  
nPCLK1  
Pulldown  
Non-inverting differential clock/data input.  
Pullup/  
Pulldown  
Inverting differential clock/data input. VDD/2 default when left floating.  
4
5
6
7
VREF1  
VDD  
Output  
Power  
Power  
Output  
Bias voltage reference for the PCLK1, nPCLK1 inputs.  
Power supply pins.  
VDD  
Power supply pins.  
VREF0  
Bias voltage reference for the PCLK0, nPCLK0 inputs.  
Pullup/  
Pulldown  
8
nPCLK0  
Input  
Inverting differential clock/data input. VDD/2 default when left floating.  
9
PCLK0  
nc  
Input  
Unused  
Power  
Output  
Output  
Output  
Output  
Output  
Output  
Output  
Output  
Power  
Power  
Output  
Output  
Output  
Output  
Output  
Output  
Output  
Output  
Power  
Power  
Output  
Output  
Pulldown  
Non-inverting differential clock/data input.  
Do not connect.  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
VDD  
Q0  
Power supply pins.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
nQ0  
Q1  
nQ1  
Q2  
nQ2  
Q3  
nQ3  
VDD  
GND  
Q4  
Power supply pins.  
Power supply ground.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
nQ4  
Q5  
nQ5  
Q6  
nQ6  
Q7  
nQ7  
GND  
VDD  
Q8  
Power supply ground.  
Power supply pins.  
Differential output pair. LVDS interface levels.  
nQ8  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
1
Table 1. Pin Descriptions  
Number  
34  
Name  
Q9  
Type  
Description  
Output  
Output  
Output  
Output  
Output  
Output  
Power  
Power  
Differential output pair. LVDS interface levels.  
35  
nQ9  
36  
Q10  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
37  
nQ10  
Q11  
38,  
39  
nQ11  
VDD  
40  
Power supply pins.  
GND_EP  
Exposed pad of package. Connect to GND.  
NOTE 1: Pulldown and Pullup refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
CIN  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
pF  
Input Capacitance  
Input Pulldown Resistor  
Input Pullup Resistor  
2
RPULLDOWN  
RPULLUP  
50  
50  
k  
k  
Function Table  
Table 3. SEL Input Function Table  
SEL  
1
Operation  
0
1
PCLK0, nPCLK0 is the selected differential clock input.  
PCLK1, nPCLK1 is the selected differential clock input.  
Input buffers are disabled and outputs are static.  
Open  
NOTE 1: SEL is an asynchronous control.  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress  
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Electrical Characteristics  
or AC Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product  
reliability.  
Item  
Rating  
Supply Voltage, VDD  
Inputs, VI  
4.6V  
-0.5V to VDD + 0.5V  
Outputs, IO  
Continuous Current  
Surge Current  
10mA  
15mA  
Input Sink/Source, IREF  
±2mA  
Maximum Junction Temperature, TJ,MAX  
125°C  
Storage Temperature, TSTG  
-65°C to 150°C  
2000V  
ESD - Human Body Model1  
ESD - Charged Device Mode1  
500V  
NOTE 1: According to JEDEC/JS-001-2012/ 22-C101E.  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics, V = 2.5V ± 5%, T = -40°C to 85°C  
DD  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
VDD  
Power Supply Voltage  
2.375  
2.5V  
2.625  
V
Q0 to Q11 terminated 100  
IDD  
Power Supply Current  
184  
213  
mA  
between nQx, Qx  
Table 4B. LVCMOS/LVTTL DC Characteristics, V = 2.5V ± 5%, T = -40°C to 85°C  
DD  
A
Symbol  
VMID  
VIH  
Parameter  
Test Conditions  
Floating  
Minimum  
Typical  
Maximum  
Units  
V
Input voltage  
VDD / 2  
Input High Voltage  
Input Low Voltage  
Input High Current  
Input Low Current  
0.7 * VDD  
-0.3  
VDD + 0.3  
0.2 * VDD  
150  
V
VIL  
V
IIH  
SEL  
SEL  
VDD = VIN = 2.625V  
µA  
µA  
IIL  
VDD = 2.625V, VIN = 0V  
-150  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Table 4C. Differential Inputs Characteristics, V = 2.5V ± 5%, T = -40°C to 85°C  
DD  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
PCLK0,  
nPCLK0  
PCLK1,  
nPCLK1  
Input   
High Current  
IIH  
VIN = VDD = 2.625V  
150  
µA  
PCLK0,  
PCLK1  
V
IN = 0V, VDD = 2.625V  
IN = 0V, VDD = 2.625V  
-10  
-150  
µA  
µA  
V
Input   
Low Current  
IIL  
nPCLK0,  
nPCLK1  
V
Reference Voltage for   
VREF0, VREF1  
I
REFx = ±0.5mA  
(VDD/2) – 0.15  
VDD/2  
(VDD/2) + 0.15  
Input Bias  
fREF < 1.5GHz  
fREF > 1.5GHz  
0.1  
0.2  
1.5  
1.5  
V
V
VPP  
Peak-to-Peak Voltage1  
Common Mode Input  
Voltage1, 2  
VCMR  
1.0  
V
DD – (VPP/2)  
V
NOTE 1: VIL should not be less than -0.3V. VIH should not be greater than VDD  
NOTE 2: Common mode input voltage is defined at the crosspoint.  
.
Table 4D. LVDS DC Characteristics, V = 2.5V ± 5%, T = -40°C to 85°C  
DD  
A
Symbol  
VOD  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
454  
Units  
mV  
mV  
V
Differential Output Voltage  
VOD Magnitude Change  
Offset Voltage  
Outputs Loaded with 100  
247  
VOD  
VOS  
50  
1.125  
1.375  
50  
VOS  
VOS Magnitude Change  
mV  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
AC Electrical Characteristics  
1
Table 5. AC Electrical Characteristics, V = 2.5V ± 5%, T = -40°C to 85°C  
DD  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Input  
PCLK[0:1],  
fREF  
2
GHz  
Frequency nPCLK[0:1]  
InputPCLK[0:1],  
V/t  
1.5  
V/ns  
ps  
Edge Rate nPCLK[0:1]  
Propagation Delay2  
PCKx, nPCLKx to any Qx, nQx  
for VPP = 0.1V or 0.3V  
tPD  
200  
310  
500  
tsk(o)  
tsk(p)  
tsk(pp)  
Output Skew3, 4  
Pulse Skew5, 6  
45  
80  
ps  
ps  
ps  
fREF = 100MHz, 500MHz, 1GHz, 1.5GHz  
Part-to-Part Skew4, 7  
300  
Buffer Additive Phase  
Jitter, RMS; refer to  
Additive Phase Jitter  
Section  
f
REF = 156.25MHz, VPP = 1.0V, VCMR = 1V  
Integration Range: 10kHz – 20MHz  
tJIT  
77  
90  
fs  
20% to 80%  
tR / tF  
Output Rise/ Fall Time  
100  
75  
200  
ps  
Outputs Loaded with 100  
MUXISOLATION Mux Isolation8  
f
REF = 100MHz  
dB  
NOTE 1: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE 2: Measured from the differential input crosspoint to the differential output crosspoint.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crosspoint.  
NOTE 4: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 5: Output pulse skew tsk(p) is absolute difference of the propagation delay times: |tPLH - tPHL|.  
NOTE 6: Output duty cycle is frequency dependent: odc= input duty cycle +/- ((tsk(p)/2)*(1/output period))*100.  
NOTE 7: Defined as skew between outputs on different devices operating at the same supply voltage, same frequency, same temperature and  
with equal load conditions. Using the same type of inputs on each device, the outputs are measured at the differential cross point.  
NOTE 8: Qx, nQx outputs measured differentially. See MUX Isolation diagram in the Parameter Measurement Information section.  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Additive Phase Jitter  
The spectral purity in a band at a specific offset from the fundamental  
compared to the power of the fundamental is called the dBc Phase  
Noise. This value is normally expressed using a Phase noise plot  
and is most often the specified plot in many applications. Phase noise  
is defined as the ratio of the noise power present in a 1Hz band at a  
specified offset from the fundamental frequency to the power value of  
the fundamental. This ratio is expressed in decibels (dBm) or a ratio  
of the power in the 1Hz band to the power in the fundamental. When  
the required offset is specified, the phase noise is called a dBc value,  
which simply means dBm at a specified offset from the fundamental.  
By investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the entire  
time record of the signal. It is mathematically possible to calculate an  
expected bit error rate given a phase noise plot.  
Additive Phase Jitter 77fs (typical)  
Offset from Carrier Frequency (Hz)  
As with most timing specifications, phase noise measurements have  
issues relating to the limitations of the measurement equipment. The  
noise floor of the equipment can be higher or lower than the noise  
floor of the device. Additive phase noise is dependent on both the  
noise floor of the input source and measurement equipment.  
Measured using a Wenzel 156.25MHz Oscillator as the input source.  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Parameter Measurement Information  
V
DD  
nPCLK[0:1]  
PCLK[0:1]  
V
DD  
VPP  
Cross Points  
VCMR  
GND  
2.5V LVDS Output Load Test Circuit  
Differential Input Level  
nPCLK[0:1]  
PCLK[0:1]  
nQx  
Qx  
nQy  
nQy  
Qy  
Qy  
tPLH  
tPHL  
tsk(p)= |tPHL - tPLH  
|
Pulse Skew  
Output Skew  
Part 1  
nQx  
nQ[0:11]  
80%  
80%  
Qx  
VOD  
20%  
Part 2  
20%  
nQy  
Q[0:11]  
tF  
tR  
Qy  
tsk(pp)  
Part-to-Part Skew  
Output Rise/Fall Time  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Parameter Measurement Information, continued  
Spectrum of Output Signal Q  
MUX selects active  
input clock signal  
A0  
A1  
nPCLK[0:1]  
PCLK[0:1]  
MUX_ISOLATION = A0 – A1  
nQ[0:11]  
MUX selects other input  
Q[0:11]  
tPD  
ƒ
Frequency  
(fundamental)  
Propagation Delay  
MUX Isolation  
Differential Output Voltage Setup  
Offset Voltage Setup  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Applications Information  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
PCLK/nPCLK Inputs  
LVDS Outputs  
For applications not requiring the use of a differential input, both the  
PCLK and nPCLK pins can be left floating. Though not required, but  
for additional protection, a 1kresistor can be tied from PCLK to  
ground.  
All unused LVDS output pairs can be either left floating or terminated  
with 100across. If they are left floating, there should be no trace  
attached.  
Wiring the Differential Input to Accept Single-Ended Levels  
Figure 1 shows how a differential input can be wired to accept single  
ended levels. The reference voltage V1 = VDD/2 is generated by the  
bias resistors R1 and R2. The bypass capacitor (C1) is used to help  
filter noise on the DC bias. This bias circuit should be located as  
close to the input pin as possible. The ratio of R1 and R2 might need  
to be adjusted to position the V1 in the center of the input voltage  
swing. For example, if the input clock swing is 2.5V and VDD = 2.5V,  
R1 and R2 value should be adjusted to set V1 at 1.25V. The values  
below are for when both the single ended swing and VDD are at the  
same voltage. This configuration requires that the sum of the output  
impedance of the driver (Ro) and the series resistance (Rs) equals  
the transmission line impedance. In addition, matched termination at  
the input will attenuate the signal in half. This can be done in one of  
two ways. First, R3 and R4 in parallel should equal the transmission  
line impedance. For most 50applications, R3 and R4 can be 100.  
The values of the resistors can be increased to reduce the loading for  
slower and weaker LVCMOS driver. When using single-ended  
signaling, the noise rejection benefits of differential signaling are  
reduced. Even though the differential input can handle full rail  
LVCMOS signaling, it is recommended that the amplitude be  
reduced. The datasheet specifies a lower differential amplitude,  
however this only applies to differential signals. For single-ended  
applications, the swing can be larger, however VIL cannot be less  
than -0.3V and VIH cannot be more than VDD + 0.3V. Suggested edge  
rate faster than 1V/ns. Though some of the recommended  
components might not be used, the pads should be placed in the  
layout. They can be utilized for debugging purposes. The datasheet  
specifications are characterized and guaranteed by using a  
differential signal.  
Figure 1. Recommended Schematic for Wiring a Differential Input to Accept Single-ended Levels  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
2.5V LVPECL Clock Input Interface  
The PCLK /nPCLK accepts LVPECL, LVDS, CML and other  
differential signals. Both signals must meet the VPP and VCMR input  
requirements. Figure 2A to Figure 2E show interface examples for  
the PCLK/ nPCLK input driven by the most common driver types. The  
input interfaces suggested here are examples only. If the driver is  
from another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the driver  
termination requirements.  
2.5V  
2.5V  
2.5V  
PCLK  
nPCLK  
LVPECL  
Input  
CML  
Figure 2A. PCLK/nPCLK Input Driven by a CML Driver  
Figure 2D. PCLK/nPCLK Input Driven by a  
2.5V LVPECL Driver with AC Couple  
2.5V  
2.5V  
PCLK  
PCLK  
nPCLK  
nPCLK  
LVPECL  
CML Built-In Pullup  
Input  
Figure 2B. Figure 2C.PCLK/nPCLK Input Driven by a  
Figure 2E. PCLK/nPCLK Input Driven by a  
Built-In Pullup CML Driver  
2.5V LVDS Driver  
2.5V  
2.5V  
2.5V  
PCLK  
nPCLK  
LVPECL  
Input  
LVPECL  
Figure 2C. PCLK/nPCLK Input Driven by a   
2.5V LVPECL Driver  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
LVDS Driver Termination  
For a general LVDS interface, the recommended value for the  
termination impedance (ZT) is between 90and 132. The actual  
value should be selected to match the differential impedance (Z0) of  
your transmission line. A typical point-to-point LVDS design uses a  
100parallel resistor at the receiver and a 100differential  
transmission-line environment. In order to avoid any  
transmission-line reflection issues, the components should be  
surface mounted and must be placed as close to the receiver as  
possible. IDT offers a full line of LVDS compliant devices with two  
types of output structures: current source and voltage source. The  
standard termination schematic as shown in Figure 3A can be used  
with either type of output structure. Figure 3B, which can also be  
used with both output types, is an optional termination with center tap  
capacitance to help filter common mode noise. The capacitor value  
should be approximately 50pF. If using a non-standard termination, it  
is recommended to contact IDT and confirm if the output structure is  
current source or voltage source type. In addition, since these  
outputs are LVDS compatible, the input receiver’s amplitude and  
common-mode input range should be verified for compatibility with  
the output.  
ZO ZT  
LVDS  
Driver  
LVDS  
ZT  
Receiver  
Figure 3A. Standard LVDS Termination  
Z
T
2
ZO ZT  
LVDS  
LVDS  
Driver  
Receiver  
C
Z
T
2
Figure 3B. Optional LVDS Termination  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package and  
the electrical performance, a land pattern must be incorporated on  
the Printed Circuit Board (PCB) within the footprint of the package  
corresponding to the exposed metal pad or exposed heat slug on the  
package, as shown in Figure 4. The solderable area on the PCB, as  
defined by the solder mask, should be at least the same size/shape  
as the exposed pad/slug area on the package to maximize the  
thermal/electrical performance. Sufficient clearance should be  
designed on the PCB between the outer edges of the land pattern  
and the inner edges of pad pattern for the leads to avoid any shorts.  
and dependent upon the package power dissipation as well as  
electrical conductivity requirements. Thus, thermal and electrical  
analysis and/or testing are recommended to determine the minimum  
number needed. Maximum thermal and electrical performance is  
achieved when an array of vias is incorporated in the land pattern. It  
is recommended to use as many vias connected to ground as  
possible. It is also recommended that the via diameter should be 12  
to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is  
desirable to avoid any solder wicking inside the via during the  
soldering process which may result in voids in solder between the  
exposed pad/slug and the thermal land. Precautions should be taken  
to eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the Application  
Note on the Surface Mount Assembly of Amkor’s Thermally/  
Electrically Enhance Leadframe Base Package, Amkor Technology.  
While the land pattern on the PCB provides a means of heat transfer  
and electrical grounding from the package to the board through a  
solder joint, thermal vias are necessary to effectively conduct from  
the surface of the PCB to the ground plane(s). The land pattern must  
be connected to ground through these vias. The vias act as “heat  
pipes”. The number of vias (i.e. “heat pipes”) are application specific  
SOLDER  
PIN  
SOLDER  
EXPOSED HEAT SLUG  
PIN  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 8SLVD1212I. Equations and example calculations are  
also provided.  
1. Power Dissipation.  
The total power dissipation for the 8SLVD1212I is the sum of the core power plus the output power dissipation due to the load. The following  
is the power dissipation for VDD = 2.5V + 5% = 2.625V, which gives worst case results.  
The maximum current at 85°C is as follows:  
IDD_MAX = 213mA  
Power (core)MAX = VDD_MAX * IDD_MAX = 2.625V * 213mA = 559.125mW  
Total Power_MAX = 559.125mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 33°C/W per Table 6 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.559W * 33°C/W = 103.5°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 6. Thermal Resistance for 40-Lead VFQFN, Forced Convection  
JA  
JA (°C/W) vs. Air Flow (m/s)  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
33°C/W  
26.3°C/W  
24°C/W  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
Reliability Information  
Table 7. vs. Air Flow Table for a 40-Lead VFQFN, Forced Convection  
JA  
JA (°C/W) vs. Air Flow (m/s)  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
33°C/W  
26.3°C/W  
24°C/W  
Transistor Count  
The transistor count for the 8SLVD1212 is: 8301  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
40-Lead VFQFN Package Outline and Package Dimensions  
Table 8. Package Dimensions for 40-Lead Package  
DIMENSIONS  
NOTES:  
The drawing and dimension data originates from IDT Package  
Outline Drawing PSC-4115, Rev 07.  
1. Dimensions and tolerances conform to ASME Y14.5M-1994.  
SYMBOL  
MIN  
NOM  
MAX  
NOTE  
2. N is the number of terminals.  
b
0.18  
0.25  
0.3  
4
Nd is the number of terminals in X-direction.  
Ne is the number of terminals in Y-direction.  
D
6.00 BSC  
6.00 BSC  
4.65  
3. All dimensions are in millimeters.  
E
4. Dimension b applies to plated terminal and is measured  
between 0.20 and 0.30mm from terminal tip.  
D2  
4.50  
4.50  
0.30  
4.75  
4.75  
0.50  
5. The Pin #1 identifier must exist on the top surface of the  
package by using indentation mark or other feature of package  
body.  
E2  
4.65  
L
0.40  
6. Exact shape and size of this feature is optional.  
7. Applied to exposed pad and terminals. Exclude embedded part  
of exposed pad from measuring.  
e
0.50 BSC  
40  
N
2
7
2
8. Applied only for terminals.  
9. This outline conforms to JEDEC Publication 95, Registration  
MO-220, Variation VJJD-5 with exception of D2 & E2.  
A
A1  
0.80  
0.00  
0.90  
1.00  
0.05  
0.02  
A3  
0.2 REF  
10  
Nd and Ne  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
Recommended Land Pattern  
NOTES:  
The Recommended Land Pattern originates from IDT Package  
Outline Drawing PSC-4115, Rev 07.  
1. All dimensions are in millimeters. Angles in degrees.  
2. Top down view, as viewed on PCB.  
3. Component outline shows for reference in green.  
4. Land pattern in blue, NSMD pattern assumed.  
5. Land pattern recommendation per IPC-7351B generic  
requirement for surface mount design and land pattern.  
©2016 Integrated Device Technology, Inc.  
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8SLVD1212 Datasheet  
Ordering Information  
Table 9. Ordering Information  
Part/Order Number  
Marking  
Package  
Shipping Packaging  
Temperature  
8SLVD1212NLGI  
IDT8SLVD1212NLGI  
40-Lead VFQFN, Lead-Free  
Tray  
-40°C to 85°C  
Tape & Reel,  
pin 1 orientation:  
EIA-481-C  
8SLVD1212NLGI8  
IDT8SLVD1212NLGI  
40-Lead VFQFN, Lead-Free  
40-Lead VFQFN, Lead-Free  
-40°C to 85°C  
-40°C to 85°C  
Tape & Reel,  
pin 1 orientation:  
EIA-481-D  
8SLVD1212NLGI/W  
IDT8SLVD1212NLGI  
Table 10. Pin 1 Orientation in Tape and Reel Packaging  
Part Number Suffix  
Pin 1 Orientation  
Illustration  
CARRIER TAPE TOPSIDE  
(Round Sprocket Holes)  
Correct Pin 1 ORIENTATION  
8
Quadrant 1 (EIA-481-C)  
USER DIRECTION OF FEED  
CARRIER TAPE TOPSIDE  
(Round Sprocket Holes)  
Correct Pin 1 ORIENTATION  
/W  
Quadrant 2 (EIA-481-D)  
USER DIRECTION OF FEED  
©2016 Integrated Device Technology, Inc.  
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Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
Revision History Sheet  
Rev  
Table  
Page  
17 - 18  
15  
Description of Change  
Date  
2
Corrected package drawings.  
08/21/15  
T6  
T7  
Thermal Resistance table description, corrected the word “Convection”, updated table  
header.  
3
7/5/16  
16  
Reliability table description, added “Forced Convection”, updated table header.  
Updated datasheet header/footer.  
©2016 Integrated Device Technology, Inc.  
20  
Revision 3, July 5, 2016  
8SLVD1212 Datasheet  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.idt.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications  
and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein  
is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability,  
or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of  
IDT or their respective third party owners.  
For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary.  
Copyright ©2016 Integrated Device Technology, Inc. All rights reserved.  

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