IDTQS3R862Q [IDT]

QUICKSWITCH-R PRODUCTS HIGH-SPEED CMOS 10-BIT LOW RESISTANCE BUS SWITCH WITH ACTIVE HIGH AND LOW ENABLES; 快速切换- R产品高速CMOS 10位低电阻总线,高电平有效,低电平使能开关
IDTQS3R862Q
型号: IDTQS3R862Q
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

QUICKSWITCH-R PRODUCTS HIGH-SPEED CMOS 10-BIT LOW RESISTANCE BUS SWITCH WITH ACTIVE HIGH AND LOW ENABLES
快速切换- R产品高速CMOS 10位低电阻总线,高电平有效,低电平使能开关

开关
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中文:  中文翻译
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QUICKSWITCH® PRODUCTS  
IDTQS3R862  
HIGH-SPEED CMOS 10-BIT LOW  
RESISTANCE BUS SWITCH WITH  
ACTIVE HIGH AND LOW ENABLES  
FEATURES:  
DESCRIPTION:  
• Enhanced N channel FET with no inherent diode to Vcc  
• 2.5bidirectional switches connect inputs to outputs  
• Zero propagation delay, zero ground bounce  
• Undershoot clamp diodes on all switch and control inputs  
• Active high and low enable controls  
TheQS3R862providesasetoftenhigh-speedCMOSTTL-compatible  
bus switches. The very low ON resistance (2.5) of the QS3R862 allows  
inputs to be connected to outputs without adding propagation delay and  
without generating additional ground bounce noise. The switches are  
controlledbyactiveLowEnable(BE)andactiveHighEnable(BE)controls.  
The QS3R862 with 2.5RON resistance is ideal for switching digital  
busesaswellasforhot-plugging, hot-swapping, andhot-dockingapplica-  
tions. The low RON resistance of the QS3R862 makes it ideal for PCI,  
Compact PCI, and VME hot-plugging applications.  
• Bidirectional signal flow  
• Available in SOIC and QSOP packages  
APPLICATIONS:  
The QS3R862 is characterized for operation at -40°C to +85°C.  
• Hot-swapping, hot-docking (low resistance for PCI and  
Compact PCI applications)  
• Voltage translation (5V to 3.3V)  
• Power Conservation  
• Capacitance reduction and isloation  
• Applications requiring low RON resistance and active high  
enabling  
• Bus Isolation  
• Clock Gating  
FUNCTIONALBLOCKDIAGRAM  
A0  
B0  
B9  
A9  
BE  
BE  
TheIDTlogoisaregisteredtrademarkofIntegratedDeviceTechnology,Inc.  
INDUSTRIAL TEMPERATURE RANGE  
NOVEMBER 1999  
1
c
1999 Integrated Device Technology, Inc.  
DSC-5541/1  
IDTQS3R862  
INDUSTRIALTEMPERATURERANGE  
HIGH-SPEEDCMOS10-BITLOWRESISTANCEBUSSWITCH  
PINCONFIGURATION  
ABSOLUTEMAXIMUMRATINGS(1)  
Symbol  
Description  
Supply Voltage to Ground  
DC Switch Voltage VS  
Max  
–0.5 to +7  
–0.5 to +7  
–0.5 to +7  
–3  
Unit  
V
(2)  
VTERM  
1
2
3
4
5
6
7
24  
23  
22  
21  
20  
19  
18  
Vcc  
BE  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
(3)  
VTERM  
V
(3)  
BE  
B0  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
B9  
VTERM  
DC Input Voltage VIN  
V
VAC  
AC Input Voltage (pulse width 20ns)  
DC Output Current  
V
IOUT  
PMAX  
TSTG  
120  
mA  
W
Maximum Power Dissipation  
Storage Temperature  
0.5  
–65 to +150  
°C  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
2. VCC terminals.  
3. All terminals except VCC .  
8
9
17  
16  
10  
11  
12  
15  
14  
13  
A9  
CAPACITANCE (TA = +25°C, f = 1MHz, VIN = 0V, VOUT = 0V)  
GND  
Pins  
Typ.  
Max.(1)  
Unit  
ControlInputs  
3
5
4
6
pF  
Quickswitch Channels (Switch OFF)  
pF  
SOIC/ QSOP  
TOP VIEW  
NOTE:  
1. This parameter is guaranteed but not production tested.  
PINDESCRIPTION  
Pin Names  
A0 - A9  
B0 - B9  
BE  
I/O  
I/O  
I/O  
I
Description  
Bus A  
Bus B  
Active LOW Bus Enable  
Active HIGH Bus Enable  
BE  
I
FUNCTIONTABLE(1)  
BE  
BE  
A0 - A9  
Function  
L
L
Z
Disconnect  
Disconnect  
Connect  
L
H
Z
B0 - B9  
Z
H
H
L
H
Disconnect  
NOTE:  
1. H = HIGH Voltage Level  
L = LOW Voltage Level  
Z = High-Impedance  
2
IDTQS3R862  
INDUSTRIALTEMPERATURERANGE  
HIGH-SPEEDCMOS10-BITLOWRESISTANCEBUSSWITCH  
DCELECTRICALCHARACTERISTICSOVEROPERATINGRANGE  
FollowingConditionsApplyUnlessOtherwiseSpecified:  
Industrial: TA = –40°C to +85°C, VCC = 5V ± 10%  
Symbol  
VIH  
Parameter  
Input HIGH Voltage  
Test Conditions  
Guaranteed Logic HIGH for Control Pins  
GuaranteedLogicLOWforControlPins  
0V VIN VCC  
Min.  
2
Typ.(1) Max.  
Unit  
V
0.8  
±1  
±1  
5
VIL  
InputLOWVoltage  
V
IIN  
InputLeakageCurrent(ControlInputs)  
Off-StateCurrent(Hi-Z)  
SwitchONResistance(2)  
0.01  
0.01  
2.5  
4
µA  
µA  
IOZ  
0V VOUT VCC, Switches OFF  
VCC = Min., VIN = 0V, ION = 30mA  
VCC = Min., VIN = 2.4V, ION = 15mA  
VIN = VCC = 5V, IOUT = -5µA  
RON  
8.5  
4.3  
VP  
PassVoltage(3)  
3.7  
4
V
NOTES:  
1. Typical values are at VCC = 5V and TA = 25°C.  
2. Max value of RON is guaranteed but not production tested.  
3. Pass voltage is guaranteed but not production tested.  
IN  
CC  
TYPICAL ON RESISTANCE vs V AT V = 5V  
16  
14  
RON  
(ohms)  
12  
10  
8
6
4
2
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VIN  
(Volts)  
3
IDTQS3R862  
INDUSTRIALTEMPERATURERANGE  
HIGH-SPEEDCMOS10-BITLOWRESISTANCEBUSSWITCH  
POWERSUPPLYCHARACTERISTICS  
Symbol  
ICCQ  
Parameter  
TestConditions(1)  
VCC = Max., VIN = GND or VCC, f = 0  
VCC = Max., VIN = 3.4V, f = 0  
Typ.(2)  
0.2  
Max.  
3
Unit  
µA  
Quiescent Power Supply Current  
Power Supply Current per Input HIGH(3)  
Dynamic Power Supply Current per MHz(4)  
ICC  
2.5  
mA  
ICCD  
VCC = Max., A and B Pins Open,  
BE or BE Input Toggling @ 50% Duty Cycle  
0.25  
mA/MHz  
NOTES:  
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.  
2. Typical values are at VCC = 5V and TA = 25°C.  
3. Per TTL-driven input (VIN = 3.4V, control inputs only). A and B pins do not contribute to Icc.  
3. This current applies to the control inputs only and represents the current required to switch internal capacitance at the specified frequency. The A and B inputs generate no significant  
AC or DC currents as they transition. This parameter is guaranteed but not production tested.  
SWITCHINGCHARACTERISTICSOVEROPERATINGRANGE  
TA = -40°C to +85°C, VCC = 5V ± 10%  
CLOAD = 50pF, RLOAD = 500unless otherwise noted.  
(1)  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
tPLH  
tPHL  
DataPropagationDelay(2)  
A to B, B to A  
0.12(3)  
ns  
tPZL  
tPZH  
SwitchTurn-OnDelay  
BE or BE to A or B  
SwitchTurn-OffDelay(2)  
BE or BE to A or B  
1.5  
1.5  
5.6  
4.5  
ns  
ns  
tPLZ  
tPHZ  
NOTES:  
1. Minimums are guaranteed but not production tested.  
2. This parameter is guaranteed but not production tested.  
3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone  
is of the order of 0.12ns at CL = 50pF. Since this time constant is much smaller than the rise and fall times of typical driving signals, it adds very little propagation delay to the  
system. Propagation delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interaction with the load on  
the driven side.  
4
IDTQS3R862  
INDUSTRIALTEMPERATURERANGE  
HIGH-SPEEDCMOS10-BITLOWRESISTANCEBUSSWITCH  
ORDERINGINFORMATION  
XX  
IDTQS  
XXXXX  
X
Package  
Process  
Device Type  
Industrial (-40°C to +85°C)  
Blank  
Small Outline IC  
Quarter Size Outline Package  
SO  
Q
High Speed CMOS 10-Bit Low Resistance Bus Switch  
with Active High and Low Enables  
3R862  
CORPORATE HEADQUARTERS  
2975StenderWay  
Santa Clara, CA 95054  
for SALES:  
800-345-7015 or 408-727-6116  
fax: 408-492-8674  
for Tech Support:  
logichelp@idt.com  
(408) 654-6459  
www.idt.com  
5

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