IW4081BD [IKSEMICON]

Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS; 四2输入与门高压硅栅CMOS
IW4081BD
型号: IW4081BD
厂家: IK SEMICON CO., LTD    IK SEMICON CO., LTD
描述:

Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS
四2输入与门高压硅栅CMOS

高压 栅
文件: 总5页 (文件大小:165K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TECHNICAL DATA  
IW4081B  
Quad 2-Input AND Gate  
High-Voltage Silicon-Gate CMOS  
The IW4081B AND gates provide the system designer with direct  
emplementation of the AND function.  
Operating Voltage Range: 3.0 to 18 V  
Maximum input current of 1 μA at 18 V over full package-temperature  
range; 100 nA at 18 V and 25°C  
Noise margin (over full package temperature range):  
1.0 V min @ 5.0 V supply  
2.0 V min @ 10.0 V supply  
2.5 V min @ 15.0 V supply  
ORDERING INFORMATION  
IW4081BN Plastic  
IW4081BD SOIC  
TA = -55° to 125° C for all packages  
LOGIC DIAGRAM  
PIN ASSIGNMENT  
FUNCTION TABLE  
Inputs  
Output  
PIN 14 =VCC  
PIN 7 = GND  
A
L
B
L
Y
L
L
L
H
L
H
L
H
H
H
Rev. 00  
IW4081B  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +20  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
±10  
Unit  
V
VCC  
VIN  
VOUT  
IIN  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
V
mA  
mW  
PD  
Power Dissipation in Still Air, Plastic DIP+  
SOIC Package+  
750  
500  
PD  
Tstg  
TL  
Power Dissipation per Output Transistor  
Storage Temperature  
100  
-65 to +150  
260  
mW  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
°C  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
Min  
3.0  
0
Max  
18  
Unit  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
VIN, VOUT  
TA  
VCC  
+125  
V
-55  
°C  
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.  
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this  
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or  
VOUT)VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused  
outputs must be left open.  
Rev. 00  
IW4081B  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
VCC  
V
Guaranteed Limit  
Symbol  
VIH  
Parameter  
Test Conditions  
Unit  
V
-55°C  
25°C  
125  
°C  
Minimum High-Level VOUT=0.5V or VCC - 0.5V  
Input Voltage  
5.0  
10  
15  
3.5  
7
3.5  
7
3.5  
7
VOUT=1.0V or VCC - 1.0V  
VOUT=1.5V or VCC - 1.5V  
11  
11  
11  
VIL  
VOH  
VOL  
Maximum Low -  
Level Input Voltage  
VOUT=0.5V  
VOUT=1.0V  
VOUT=1.5V  
5.0  
10  
15  
1.5  
3
4
1.5  
3
4
1.5  
3
4
V
V
V
Minimum High-Level VIN=VCC  
Output Voltage  
5.0  
10  
15  
4.95  
9.95  
14.95  
4.95  
9.95  
14.95 14.95  
4.95  
9.95  
Maximum Low-Level VIN=GND or VCC  
Output Voltage  
5.0  
10  
15  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
IIN  
Maximum Input  
Leakage Current  
VIN= GND or VCC  
VIN= GND or VCC  
18  
±0.1  
±0.1  
±1.0  
μA  
μA  
ICC  
Maximum Quiescent  
Supply Current  
(per Package)  
5.0  
10  
15  
20  
0.25  
0.5  
1.0  
0.25  
0.5  
1.0  
7.5  
15  
30  
5.0  
5.0  
150  
IOL  
Minimum Output  
Low (Sink) Current  
VIN= GND or VCC  
UOL=0.4 V  
UOL=0.5 V  
mA  
mA  
5.0  
10  
15  
0.64  
1.6  
4.2  
0.51  
1.3  
3.4  
0.36  
0.9  
2.4  
UOL=1.5 V  
IOH  
Minimum Output  
VIN= GND or VCC  
High (Source) Current UOH=2.5 V  
UOH=4.6 V  
5.0  
5.0  
10  
-2.0  
-0.64  
-1.6  
-1.6  
-0.51  
-1.3  
-1.15  
-0.36  
-0.9  
UOH=9.5 V  
UOH=13.5 V  
15  
-4.2  
-3.4  
-2.4  
Rev. 00  
IW4081B  
AC ELECTRICAL CHARACTERISTICS (CL=50pF, RL=200kΩ, Input tr=tf=20 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
Parameter  
Unit  
ns  
-55°C  
25°C  
125°C  
tPLH, tPHL Maximum Propagation Delay, Input A or B to  
Output Y (Figure 1)  
5.0  
10  
15  
250  
120  
90  
250  
120  
90  
500  
240  
180  
tTLH, tTHL Maximum Output Transition Time, Any Output  
(Figure 1)  
5.0  
10  
15  
200  
100  
80  
200  
100  
80  
400  
200  
160  
ns  
CIN  
Maximum Input Capacitance  
-
7.5  
pF  
Figure 1. Switching Waveforms  
EXPANDED LOGIC DIAGRAM  
(1/4 of the Device)  
Rev. 00  
IW4081B  
N SUFFIX PLASTIC DIP  
(MS - 001AA)  
A
Dimension, mm  
Symbol  
MIN  
18.67  
6.1  
MAX  
19.69  
7.11  
8
7
14  
1
B
A
B
C
D
F
5.33  
0.36  
1.14  
0.56  
F
L
1.78  
C
2.54  
7.62  
G
H
J
-T-  
SEATING  
PLANE  
N
0
°
10  
°
M
J
G
K
H
D
2.92  
7.62  
0.2  
3.81  
8.26  
0.36  
K
L
M
N
0.25 (0.010) M  
T
NOTES:  
1. Dimensions “A”, “B” do not include mold flash or protrusions.  
Maximum mold flash or protrusions 0.25 mm (0.010) per side.  
0.38  
D SUFFIX SOIC  
(MS - 012AB)  
Dimension, mm  
A
14  
8
Symbol  
MIN  
8.55  
3.8  
MAX  
8.75  
4
A
B
C
D
F
H
B
P
1.35  
0.33  
0.4  
1.75  
0.51  
1.27  
1
7
G
R x 45  
C
1.27  
5.27  
G
H
J
-T-  
SEATING  
PLANE  
K
M
D
J
F
0°  
8°  
0.25 (0.010) M  
T
M
C
0.1  
0.25  
0.25  
6.2  
K
M
P
NOTES:  
0.19  
5.8  
1. Dimensions A and B do not include mold flash or protrusion.  
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side  
0.25  
0.5  
R
for A; for B 0.25 mm (0.010) per side.  
Rev. 00  

相关型号:

IW4081BN

Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS
INTEGRAL

IW4081BN

Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4093B

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
INTEGRAL

IW4093B

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4093BD

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
INTEGRAL

IW4093BD

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4093BN

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
INTEGRAL

IW4093BN

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4098B

Two Multivibrators (flip-flop) High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4098BD

Two Multivibrators (flip-flop) High-Voltage Silicon-Gate CMOS
IKSEMICON

IW4098BN

Two Multivibrators (flip-flop) High-Voltage Silicon-Gate CMOS
IKSEMICON

IW416

Dual-band 1x1 Wi-Fi 4 and Bluetooth 5.1 Combo SoC
NXP