25TTS12S [INFINEON]
SURFACE MOUNTABLE PHASE CONTROL SCR; 表面贴装相位控制可控硅
| 型号： | 25TTS12S |
| 厂家： | 
Infineon |
| 描述： | SURFACE MOUNTABLE PHASE CONTROL SCR |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Bulletin I2117
25TTS..S SERIES
SURFACE MOUNTABLE
PHASE CONTROL SCR
VT
< 1.25V @ 16A
Description/Features
ITSM = 250A
The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
VR/ VD= 1200V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge Units
NEMAFR-4orG10glassfabric-basedepoxy
with4oz(140µm)copper
3.5
5.5
AluminumIMS, R
=15°C/W
8.5
13.5
25.0
A
thCA
AluminumIMSwithheatsink, R
=5°C/W
16.5
thCA
2
T =55°C, T =125°C, footprint300mm
A
J
Major Ratings and Characteristics
Characteristics
25TTS..S Units
IT(AV) Sinusoidal
waveform
IRMS
16
A
25
800and1200
250
A
V
VRRM
V
DRM
/
ITSM
VT
A
@ 16 A, TJ =25°C
1.25
V
dv/dt
di/dt
TJ
500
V/µs
A/µs
°C
150
D2 PAK (SMD-220)
-40to125
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25TTS.. S Series
Voltage Ratings
VRRM, maximum
peak reverse voltage
V
VDRM , maximum
peak direct voltage
V
IRRM/IDRM
125°C
mA
Part Number
25TTS08S
25TTS12S
800
800
5
1200
1200
Absolute Maximum Ratings
Parameters
25TTS..S Units
Conditions
IT(AV) Max.AverageOn-stateCurrent
16
25
A
50%dutycycle@TC =94°C,sinusoidalwaveform
IRMS Max. RMSOn-stateCurrent
ITSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
210
250
220
310
3100
1.25
12.0
1.0
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
@16A, TJ = 25°C
I2t
Max. I2tforfusing
A2s
I2√t Max. I2√tforfusing
A2√s
V
VTM Max.On-stateVoltageDrop
rt
On-state slope resistance
mΩ
V
TJ = 125°C
VT(TO) Threshold Voltage
IRM/IDMMax.Reverse and Direct
Leakage Current
0.5
mA
TJ = 25 °C
VR = rated VRRM/ VDRM
5.0
TJ = 125 °C
IH
IL
Max. Holding Current
Max.LatchingCurrent
100
200
500
150
mA
mA
Anode Supply = 6V, Resistive load, Initial IT=1A
AnodeSupply=6V,Resistiveload
dv/dt Max. rate of rise of off-state Voltage
di/dt Max. rate of rise of turned-on Current
V/µs
A/µs
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25TTS.. S Series
Triggering
Parameters
25TTS..S Units
Conditions
PGM Max. peak Gate Power
PG(AV) Max. average Gate Power
+ IGM Max. paek positive Gate Current
- VGM Max. paek negative Gate Voltage
IGT Max. required DC Gate Current
to trigger
8.0
2.0
1.5
10
W
A
V
60
mA
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
45
20
VGT Max. required DC Gate Voltage
to trigger
2.5
2.0
V
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
1.0
0.25
2.0
Anode supply = 6V, resistive load, TJ = 125°C
TJ = 125°C, VDRM = rated value
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
mA
TJ = 125°C, VDRM = rated value
Switching
Parameters
25TTS..S Units
Conditions
TJ = 25°C
tgt
trr
tq
Typical turn-on time
0.9
4
µs
Typical reverse recovery time
Typical turn-off time
TJ = 125°C
110
Thermal-MechanicalSpecifications
Parameters
25TTS..S Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
240
°C
°C
Tstg Max.StorageTemperatureRange
SolderingTemperature
°C
for10seconds(1.6mmfromcase)
DCoperation
RthJC Max.ThermalResistanceJunction
toCase
1.1
°C/W
RthJA Typ.ThermalResistanceJunction
40
°C/W
toAmbient(PCBMount)**
wt
T
ApproximateWeight
CaseStyle
2(0.07)
g(oz.)
D2 Pak(SMD-220)
**Whenmountedon1"square(650mm2)PCBofFR-4orG-10material4oz(140µm)copper40°C/W
Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994
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25TTS.. S Series
125
120
115
110
105
100
95
125
120
115
110
105
100
95
25TTS.. Series
(DC) = 1.1 K/W
25TTS.. Series
R
R
(DC) = 1.1 K/W
thJC
thJC
C onduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
90
120°
180°
180°
20
DC
25
90
85
0
2
4
6
8
10 12 14 16 18
0
5
10
15
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 1 - Current Rating Characteristics
30
25
20
15
10
5
35
30
25
20
15
10
5
DC
180°
120°
90°
180°
120°
90°
60°
30°
60°
30°
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
25TTS..
T = 125°C
25TTS..
T = 125°C
J
J
0
0
0
5
10
15
20
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
270
230
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 125°C
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T = 125°C
250
230
210
190
170
150
130
110
90
RRM
210
190
170
150
130
110
90
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
25TTS..Series
25TTS.. Series
0.1
70
0.01
1
10
1
10
100
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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25TTS.. S Series
1000
100
10
T = 25°C
J
T = 125°C
J
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 40 , tp = 1 ms
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
(3)
(2)
(4)
(1)
VGD
IGD
Frequency Limited by PG(AV)
10
25TTS..
0.1
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
10
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
1
0.1
0.01
Single Pulse
25TTS.. Series
0.1
0.0001
0.001
0.01
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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25TTS.. S Series
Marking Information
EXAMPLE: THIS IS AN 25TTS12S
(A)
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
25TTS12S
9G3A 9512
ASSEMBLY
LOT CODE
DATE CODE (YYWW)
YY = YEAR
WW = WEEK
(K)
(G)
Tape & Reel Information
TRR
1.60 (0.063)
1.50 (0.059)
1.60 (0.063)
1.50 (0.059)
4.10 (0.161)
3.90 (0.153)
DIA.
0.368 (0.0145)
0.342 (0.0135)
FEED DIRECTION
1.85 (0.073)
11.60 (0.457)
11.40 (0.449)
1.65 (0.065)
24.30 (0.957)
15.42 (0.609)
15.22 (0.601)
23.90 (0.941)
TRL
1.75 (0.069)
DIA.
10.90 (0.429)
10.70 (0.421)
1.25 (0.049)
16.10 (0.634)
15.90 (0.626)
4.72 (0.186)
4.52 (0.178)
FEED DIRECTION
Dimensionsinmillimetersandinches
13.50 (0.532)
26.40 (1.039)
DIA.
12.80 (0.504)
24.40 (0.961)
SMD-220 Tape & Reel
When ordering, indicate the part
number, part orientation, and the
quantity. Quantities are in multiples
of 800 pieces per reel for both
TRL and TRR.
60 (2.362)
DIA. MIN.
360 (14.173)
DIA. MAX.
To Order
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25TTS.. S Series
Outline Table
4.69 (0.18)
10.16 (0.40)
REF.
4.20 (0.16)
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
2.61 (0.10)
2.32 (0.09)
0.55 (0.02)
8.89 (0.35)
REF.
0.46 (0.02)
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
0.69 (0.27)
(K) (G)
1
3
4.57 (0.18)
1 (K) Cathode
2 (A) Anode
3 (G) Gate
8.89 (0.35)
4.32 (0.17)
17.78 (0.70)
2
0.61 (0.02) MAX.
(A)
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
2X
2.54 (0.10)
Dimensionsinmillimetersandinches
2X
Ordering Information Table
Device Code
2
(A)
25
T
T
S
12 S TRL
1
2
3
4
5
6
1
2
-
-
Current Rating, RMS value
Circuit Configuration
T = Single Thyristor
Package
1 (K)
(G) 3
3
4
-
-
T = TO-220AC
Type of Silicon
S = Converter Grade
08 = 800V
5
6
7
-
-
-
Voltage code: Code x 100 = V
RRM
S = TO-220 D2Pak (SMD 220) Version
12 = 1200V
Tape and Reel Option
TRL = Left Reel
TRR = Right Orientation Reel
To Order
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