4GBU [INFINEON]

4.0 Amps Single Phase Full Wave; 4.0安培单相全波
4GBU
型号: 4GBU
厂家: Infineon    Infineon
描述:

4.0 Amps Single Phase Full Wave
4.0安培单相全波

文件: 总5页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PART OBSOLETE - EOL18  
Bulletin I2717 rev. G 05/02  
4GBU Series  
4.0 Amps Single Phase Full Wave  
Bridge Rectifier  
Features  
Diode chips are glass passivated  
Suitable for Universal hole mounting  
Easy to assemble & install on P.C.B.  
High Surge Current Capability  
IO(AV) = 4A  
VRRM = 50/ 800V  
High Isolation between terminals and molded case (1500 VRMS  
Lead free terminals solderable as per MIL-STD-750 Method 2026  
Terminals suitable for high temperature soldering at 260°C for 8-10 secs  
UL E160375 approved  
)
Description  
These GBU Series of Single Phase Bridges consist  
of four glass passivated silicon junction connected  
as a Full Wave Bridge. These four junctions are  
encapsulated by plastic molding technique. These  
Bridges are mainly used in Switch Mode power  
supply and in industrial and consumer equipment.  
Major Ratings and Characteristics  
Parameters  
4GBU  
Units  
IO  
4
A
@TC  
100  
150  
°C  
A
IFSM  
@50Hz  
@60Hz  
@50Hz  
@60Hz  
158  
113  
A
A2s  
A2s  
V
I2t  
104  
4GBU  
VRRM range  
TJ  
50 to 800  
- 55 to150  
oC  
www.irf.com  
1
4GBU Series  
Bulletin I2717 rev. G 05/02  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Type number Code  
VRRM , max repetitive  
peak rev. voltage  
TJ = TJ max.  
V
VRMS , max RMS  
voltage  
TJ = TJ max.  
V
IRRM max.  
@ rated VRRM  
TJ = 25°C  
µA  
IRRM max.  
@ rated VRRM  
TJ = 150°C  
µA  
4GBU  
4GBU...F  
005  
01  
02  
04  
06  
08  
50  
35  
70  
140  
280  
420  
560  
5
5
5
5
5
5
400  
400  
400  
400  
400  
400  
100  
200  
400  
600  
800  
Forward Conduction  
Parameters  
4GBU  
Unit  
Conditions  
IO  
Maximum DC output current  
4
3.2  
150  
A
TC =100°C,Resistive& inductiveload  
TC =100°C,Capacitiveload  
t =10ms  
IFSM  
Maximumpeak,one-cycle  
non-repetitive surge current,  
following any rated load condition  
and with rated VRRM reapplied  
Maximum I2t for fusing,  
initial TJ =TJ max  
158  
t =8.3ms  
TJ =150°C  
I2t  
113  
104  
A2s  
t =10ms  
t =8.3ms  
VFM  
IRM  
Maximumpeakforwardvoltage  
per diode  
Typicalpeakreverseleakage  
current per diode  
1.0  
V
TJ =25oC,IFM =4A  
5
µA  
TJ =25oC, 100%VRRM  
VRRM Maximumrepetitivepeak  
reversevoltagerange  
50 to 800  
V
Thermal and Mechanical Specifications  
Parameters  
4GBU  
Unit  
Conditions  
TJ  
Tstg  
Operatingandstorage  
temperaturerange  
-55 to150  
oC  
RthJC  
Max.thermalresistance  
junction tocase  
Thermal resistance,  
junction toambient  
Approximateweight  
4.2  
22  
°C/ W  
°C/ W  
g(oz)  
DC rated current through bridge (1)  
DC rated current through bridge (1)  
RthJA  
W
T
4(0.14)  
1.0  
9.0  
MountingTorque  
Nm  
Lb.in  
BridgetoHeatsink  
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum  
heat transfer and bolt down using 3mm screw  
www.irf.com  
2
4GBU Series  
Bulletin I2717 rev. G 05/02  
Ordering Information Table  
Device Code  
4
GBU  
08  
F
4
1
2
3
1
2
3
4
-
Bridge current  
-
-
-
Basic Part Number  
Voltage Code: code x 100 = VRRM  
Lead Forming: 7.5 mm  
Outline Table  
Add suffix "F" for 7.5 mm equal space lead forming  
All dimensions are in millimetres  
3
www.irf.com  
4GBU Series  
Bulletin I2717 rev. G 05/02  
1000  
100  
10  
160  
150  
140  
130  
120  
110  
100  
90  
4GBU Series  
180˚  
(Rect)  
T = 25˚C  
J
T = 150˚C  
J
180˚  
(Sine)  
1
4GBU Series  
0.1  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
5
Average Forward Current (A)  
Instantaneous Forward Voltage (V)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Forward Voltage Drop Characteristics  
7
6
5
4
3
2
1
0
160  
At Any Rated Load Condition And With  
Rated Vrrm Applied Following Surge.  
180˚  
(Sine)  
180˚  
Initial Tj = 150˚C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
140  
120  
100  
80  
(Rect)  
4GBU Series  
T
= 150˚C  
J
60  
4GBU Series  
40  
0
0.5  
Average Forward Current (A)  
Fig. 3 - Total Power Loss Characteristics  
1
1.5  
2
2.5  
3
3.5  
4
1
10  
100  
Number of Equal Amplitude Half Cycle Current Pulses (N)  
Fig. 4 - Maximum Non-Repetitive Surge Current  
www.irf.com  
4
4GBU Series  
Bulletin I2717 rev. G 05/02  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Multiple Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 05/02  
5
www.irf.com  

相关型号:

4GBU005

50V Bridge in a GBU package
ETC

4GBU005F

4.0 Amps Single Phase Full Wave
INFINEON

4GBU01

100V Bridge in a GBU package
ETC

4GBU01F

4.0 Amps Single Phase Full Wave
INFINEON

4GBU02

200V Bridge in a GBU package
ETC

4GBU02F

4.0 Amps Single Phase Full Wave
INFINEON

4GBU02LS

暂无描述
INFINEON

4GBU02LS

DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, GBU, 4 PIN, Bridge Rectifier Diode
VISHAY

4GBU02LSF

DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, GBU, 4 PIN, Bridge Rectifier Diode
VISHAY

4GBU02LSF

Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon, GBU, 4 PIN
INFINEON

4GBU04

400V Bridge in a GBU package
ETC

4GBU04F

4.0 Amps Single Phase Full Wave
INFINEON