85EPF08J [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 85A, 800V V(RRM), Silicon, TO-247AC, POWIRTAB-1;
| 型号： | 85EPF08J |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 85A, 800V V(RRM), Silicon, TO-247AC, POWIRTAB-1 整流二极管 局域网 软恢复二极管 快速软恢复二极管 |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I2153 rev. B 11/98
QUIETIR Series
85EPF..HV
FAST SOFT RECOVERY
RECTIFIER DIODE
IF(RMS) = 160A
VF
trr
< 1.4V @ 100A
= 95ns
VRRM 800 to 1200V
Description/Features
The 85EPF.. fast soft recoveryQUIETIRrectifier series
has been optimized for combined short reverse recovery
time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling
conditions.
AvailableinthenewPowIRtabTMpackage,thisnewseries
is suitable for a large range of applications combining
excellent die to footprint ratio and sturdeness connectivity
for use in high current environments.
Typical applications are both:
Output rectification and freewheeling in
inverters, choppers and converters
Input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Package Outline
Characteristics
85EPF.. Units
I
Rect.Conduction
50%dutyCycle
@ TC = 85°C
85
A
F(AV)
I
160
800to1200
1100
A
V
F(RMS)
V
I
range
RRM
A
FSM
V
@100A,T =25°C
J
1.4
V
F
t
@1A,-100A/µs
range
95
ns
°C
rr
PowIR tabTM
T
-40to150
J
1
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
85EPF08
85EPF10
800
900
1000
1100
15
85EPF12
1200
1300
Absolute Maximum Ratings
Parameters
85EPF..
85
Units
A
Conditions
IF(AV) Max.AverageForwardCurrent
@TC=85°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
1100
1250
5000
7000
70000
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A
I2t
Max.I2tforfusing
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
85EPF..
1.36
Units
V
Conditions
VFM Max. ForwardVoltageDrop
@ 85A, TJ = 25°C
rt
Forwardsloperesistance
4.03
0.87
0.1
mΩ
TJ = 150°C
VF(TO) Thresholdvoltage
V
IRM Max.ReverseLeakageCurrent
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
mA
15
Recovery Characteristics
Parameters
85EPF..
480
Units
ns
Conditions
IF @ 85Apk
@ 25A/ µs
trr
Irr
ReverseRecoveryTime
ReverseRecoveryCurrent
ReverseRecoveryCharge
SnapFactor
7.1
A
Qrr
S
2.1
µC
@25°C
0.5
2
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
Thermal-Mechanical Specifications
Parameters
85EPF.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W
DCoperation
RthJA Max.ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance,Caseto
Heatsink
0.2
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-247AC
JEDEC
150
150
85EPF.. Se rie s
85EPF.. Se rie s
R
(DC ) = 0.35 K/W
R
(DC ) = 0.35 K/ W
th JC
thJC
140
130
120
110
100
90
140
130
120
110
100
90
C o nd uc tio n Ang le
C o nd u c tio n Pe rio d
180°
120°
90°
DC
80
80
90°
30°
180°
30°
60°
60°
120°
80
70
70
0
10 20 30 40 50 60 70 80 90
0
20
40
60
100 120 140
Ave ra g e Fo rwa rd C urre nt (A)
Ave ra g e Fo rwa rd C urre nt (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
160
140
120
100
80
200
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
C o nd u ctio n Pe rio d
C o nd u ctio n Ang le
85EPF.. Se rie s
60
40
40
85EPF.. Se rie s
T = 150°C
J
20
T
= 150°C
20
J
0
0
0
10 20 30 40 50 60 70 80 90
Ave ra g e Forwa rd C urre n t (A)
0
20
40
60
80 100 120 140
Ave ra g e Fo rwa rd Curre n t (A)
Fig.4-ForwardPowerLossCharacteristics
Fig.3-ForwardPowerLossCharacteristics
3
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
1200
1400
1300
1200
1100
1000
900
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n.
At Any Ra te d Lo a d Cond itio n And With
Ra te d V
Ap plie d Fo llowing Surg e .
1100
1000
900
800
700
600
500
400
300
RRM
Initia l T = 150°C
Initia l T = 150°C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
800
700
600
500
85EPF.. Se rie s
85EPF.. Se rie s
400
300
0.01
1
10
100
0.1
Pulse Tra in Dura tio n (s)
1
Numb er O f Eq u a l Amp litud e Ha lf C ycle Cu rre nt Pulse s (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T
= 25°C
J
T
= 150°C
J
85EPF.. Se rie s
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Insta n ta n e ous Fo rwa rd Vo lta g e (V)
Fig.7-ForwardVoltageDropCharacteristics
0.22
0.2
0.6
85EPF.. Se rie s
= 150°C
I
= 125 A
FM
T
J
0.5
80 A
0.18
0.16
0.14
0.12
0.1
I
= 80 A
40 A
FM
40 A
0.4
20 A
0.3
20 A
10 A
10 A
0.2
0.08
0.06
0.04
1 A
0.1
1 A
85EPF.. Se rie s
T
= 25°C
J
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll O f Fo rwa rd Curre n t - d i/ d t (A/ µs)
Ra te O f Fa ll O f Fo rwa rd C urre nt - d i/ d t (A/ µs)
Fig.8-RecoveryTimeCharacteristics,TJ =25°C
Fig.9-RecoveryTimeCharacteristics,TJ=150°C
4
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
4
3.5
3
14
85EPF.. Se rie s
I
= 125 A
85EPF.. Se rie s
FM
I
= 80 A
FM
T
= 150°C
T
= 25°C
J
12
10
8
J
80 A
40 A
20 A
2.5
2
40 A
6
20 A
10 A
1.5
1
10 A
1 A
4
2
0.5
0
1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te O f Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)
Ra te Of Fa ll O f Forwa rd C urre nt - d i/d t (A/ µs)
Fig.10-RecoveryChargeCharacteristics,TJ=25°C
Fig.11-RecoveryChargeCharacteristics,TJ=150°C
22
45
I
= 125 A
I
= 80 A
40 A
FM
FM
85EPF.. Se rie s
85EPF.. Se rie s
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
T
= 25°C
T
= 150°C
J
J
80 A
40 A
20 A
20 A
10 A
10 A
6
1 A
4
1 A
2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll O f Fo rw a rd C urre nt - d i/ d t (A/ µs)
Ra te O f Fa ll Of Fo rw a rd Curre nt - d i/ d t (A/ µs)
Fig.12-RecoveryCurrentCharacteristics,TJ=25°C
Fig.13-RecoveryCurrentCharacteristics,TJ=150°C
1
Ste a d y Sta te Va lue
(DC Op e ra tio n)
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.17
D = 0.08
Sing le Pulse
85EPF.. Se rie s
0.01
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig.14-ThermalImpedanceZthJCCharacteristics
5
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
Outline Table
4.82
1.27
1.80
4.60
8.38
6° TYP.
1.80
1.50
5.08
3.65 TYP.
1.20 TYP.
0.50
3.05
5.45 TYP.
12.10
14.75
15.75
Dimensionsinmillimetersandinches
Ordering Information Table
Device Code
85
E
P
F
12
BaseCathode
2
1
2
3
4
5
1
2
-
-
CurrentRating
CircuitConfiguration:
E = Single Diode
Package:
Anode
1
3
Anode
3
4
-
-
-
P = TO-247AC
Type of Silicon:
F = Fast Recovery
08 = 800V
10 = 1000V
12 = 1200V
5
6
Voltage code: Code x 100 = V
RRM
6
85EPF.. HV QUIETIR Series
Preliminary Data Sheet I2153 rev. B 11/98
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7
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