AIKQ120N60CT [INFINEON]
IGBT TRENCHSTOP™;
| 型号： | AIKQ120N60CT |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 双极性晶体管 |
| 文件： | 总16页 (文件大小：1926K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
LowꢀLossꢀDuoPack:ꢀIGBTꢀinꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀdiode
ꢀ
C
E
Features:
•ꢀꢀAutomotiveꢀAEC-Q101ꢀqualified
•ꢀꢀDesignedꢀforꢀDC/ACꢀconvertersꢀforꢀAutomotiveꢀApplication
•ꢀꢀVeryꢀlowꢀꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀꢀDynamicallyꢀstressꢀtested
G
•ꢀꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs
•ꢀꢀ100%ꢀshortꢀcircuitꢀtested
•ꢀꢀ100%ꢀofꢀtheꢀpartsꢀareꢀdynamicallyꢀtested
•ꢀꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀVCE(sat)
•ꢀꢀLowꢀEMI
•ꢀꢀLowꢀgateꢀchargeꢀQG
•ꢀꢀGreenꢀpackage
•ꢀꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀHE
ꢀꢀꢀdiode
•ꢀꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V
ꢀꢀꢀapplicationsꢀoffers:
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀꢀꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀhighꢀswitchingꢀspeed
Applications:
•ꢀꢀMainꢀinverter
•ꢀꢀClimateꢀcompressor
•ꢀꢀPTCꢀheater
•ꢀꢀMotorꢀdrives
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
PG-TO247-3-46
AIKQ120N60CT
600V
120A
AK120DCT
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ135°C
IC
160.0
120.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
480.0
480.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ124°C
IF
160.0
120.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
480.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
833.0
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,1)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,2)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.18 K/W
0.30 K/W
40 K/W
Thermal resistance
junction - ambient
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet
3
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ120.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.50 2.00
1.90
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ120.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.65 2.05
V
V
1.60
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ1.90mA,ꢀVCEꢀ=ꢀVGE
4.1
4.9
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
3000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
-
-
-
100
-
nA
S
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ120.0A
75.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
7530
446
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
206
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
-
-
772.0
-
-
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ150°C
IC(SC)
846
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
43
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ3.0Ω,ꢀRG(off)ꢀ=ꢀ3.0Ω,
Lσꢀ=ꢀ63nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
310
33
ns
ns
Turn-on energy
Eon
Eoff
Ets
4.10
2.80
6.90
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
280
3.50
25.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ120.0A,
diF/dtꢀ=ꢀ1100A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-500
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
51
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ3.0Ω,ꢀRG(off)ꢀ=ꢀ3.0Ω,
Lσꢀ=ꢀ63nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
355
43
ns
ns
Turn-on energy
Eon
Eoff
Ets
6.70
4.10
10.80
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
410
10.80
45.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ120.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-520
-
A/µs
Datasheet
5
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
900
800
700
600
500
400
300
200
100
0
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
360
360
VGE=20V
VGE=20V
15V
13V
11V
9V
15V
13V
11V
9V
320
280
240
200
160
120
80
320
280
240
200
160
120
80
8V
8V
7V
7V
6V
6V
40
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
Datasheet
6
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
360
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj=25°C
Tj=175°C
IC=38A
IC=75A
IC=120A
IC=150A
320
280
240
200
160
120
80
40
0
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1E+4
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
100
10
100
10
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=120A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
1000
8
7
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
(IC=1,9mA)
IC=120A,ꢀrG=3Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure
E)
30
25
20
15
10
5
40
Eoff
Eon
Ets
Eoff
Eon
Ets
35
30
25
20
15
10
5
0
0
0
40
80
120
160
200
240
0
5
10
15
20
25
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=120A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
16
16
14
12
10
8
Eoff
Eon
Ets
Eoff
Eon
Ets
14
12
10
8
6
6
4
4
2
2
0
0
25
50
75
100
125
150
175
200
300
400
500
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=120A,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTj=175°C,ꢀVGE=15/0V,
IC=120A,ꢀRG=3Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
120V
480V
Cies
Coes
Cres
14
12
10
8
1E+4
1000
100
6
4
2
0
10
0
100 200 300 400 500 600 700 800
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=120A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
1600
1400
1200
1000
800
600
400
200
0
12
10
8
6
4
2
0
12
14
16
18
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
(VCE=400V,ꢀstartꢀatꢀTj=25°C,ꢀTjmax≤150°C)
0.1
0.1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.05
0.02
0.01
single pulse
0.01
single pulse
0.01
i:
ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3
τi[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417
1
2
3
4
i:
ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3
τi[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931
1
2
3
4
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
cyclesꢀD
(D=tp/T)
cyclesꢀD
(D=tp/T)
Datasheet
10
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
800
12
10
8
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
700
600
500
400
300
200
100
0
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
6
4
2
0
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,DynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
70
60
50
40
30
20
10
0
0
-200
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
-400
-600
-800
-1000
-1200
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
11
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
360
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj=25°C
Tj=175°C
IF=38A
IF=75A
IF=120A
IF=150A
300
240
180
120
60
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
Package Drawing PG-TO247-3-46
MILLIMETERS
INCHES
DIM
MIN
4.90
2.31
1.90
1.16
1.96
1.96
MAX
5.10
2.51
2.10
1.26
2.25
2.06
MIN
MAX
0.201
0.099
0.083
0.050
0.089
0.081
A
0.193
0.091
0.075
0.046
0.077
0.077
DOCUMENT NO.
Z8B00174295
A1
A2
b
0
SCALE
b1
b2
5
0
5
c
D
0.59
0.66
21.10
16.85
1.35
0.023
0.823
0.640
0.041
0.023
0.618
0.516
0.053
0.026
0.831
0.663
0.053
0.031
0.626
0.531
0.061
7.5mm
20.90
16.25
1.05
D1
D2
D3
E
EUROPEAN PROJECTION
0.58
0.78
15.70
13.10
1.35
15.90
13.50
1.55
E1
E3
e
5.44 (BSC)
3
0.214 (BSC)
3
ISSUE DATE
13-08-2014
N
L
19.80
-
20.10
4.30
2.10
0.780
-
0.791
0.169
0.083
REVISION
L1
R
01
1.90
0.075
Datasheet
13
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2017-02-09
AIKQ120N60CT
TRENCHSTOPTMꢀSeries
RevisionꢀHistory
AIKQ120N60CT
Revision:ꢀ2017-02-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2017-02-09 Data sheet created
Datasheet
15
Vꢀ2.1
2017-02-09
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
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TrademarksꢀupdatedꢀNovemberꢀ2015
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