AUIRF2804STRL [INFINEON]
Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3;
| 型号： | AUIRF2804STRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96290A
AUIRF2804
AUIRF2804S
AUTOMOTIVE GRADE
AUIRF2804L
Features
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
V(BR)DSS
40V
D
RDS(on) typ.
1.5m
Ω
Ω
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
max. 2.0m
G
ID (Silicon Limited) 270A
ID (Package Limited) 195A
S
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
D
D
S
D
S
S
D
G
D
G
G
D2Pak
TO-262
TO-220AB
AUIRF2804
AUIRF2804S
AUIRF2804L
G
D
S
Gate
Drain
Source
AbsoluteMaximumRatings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
270
Units
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
D
190
A
195
(P ackage Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
1080
300
DM
P
D
@TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
2.0
± 20
W/°C
V
V
GS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS
540
1160
mJ
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
EAR
mJ
T
T
Operating Junction and
-55 to + 175
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
Units
Junction-to-Case
Rθ
Rθ
Rθ
Rθ
JC
CS
JA
JA
Case-to-Sink, Flat, Greased Surface
°C/W
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/13/12
AUIRF2804/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔΒ
Drain-to-Source Breakdown Voltage
40 ––– –––
V
VGS = 0V, ID = 250μA
Δ
/
VDSS
RDS(on) SMD
DS(on) TO-220 Static Drain-to-Source On-Resistance –––
TJ
Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance –––
1.5
1.8
2.0
2.3
4.0
–––
20
VGS = 10V, ID = 75A
VGS = 10V, ID = 75A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 75A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
Ω
m
R
VGS(th)
gfs
Gate Threshold Voltage
2.0
–––
–––
–––
–––
–––
V
Forward Transconductance
Drain-to-Source Leakage Current
130
–––
–––
–––
–––
S
IDSS
μA
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
160
41
240
62
ID = 75A
DS = 32V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
V
66
99
VGS = 10V
VDD = 20V
ID = 75A
13
–––
–––
–––
–––
120
130
130
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V
D
S
LD
Internal Drain Inductance
Between lead,
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
from package
nH
pF
G
LS
Internal Source Inductance
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 6450 –––
––– 1690 –––
Coss
Output Capacitance
VDS = 25V
Crs s
Reverse Transfer Capacitance
Output Capacitance
–––
840
–––
ƒ = 1.0MHz, See Fig. 5
Coss
––– 5350 –––
––– 1520 –––
––– 2210 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
––– 270
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
––– 1080
S
(Body Diode)
p-n junction diode.
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
T
= 25°C, I = 75A
S
, V = 0V
GS
–––
1.3
V
J
T
= 25°C, I = 75A
F
, VDD = 20V
–––
–––
56
67
84
100
ns
nC
J
di/dt = 100A/μs
Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
Notes:
Pulse width ≤ 1.0ms; duty cycle ≤ 2%
ꢀ Coss eff. is a fixed capacitance that gives the same charging
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 195A. Note that current limitations arising
from heating of the device leads may occur with
some lead mounting arrangements.(Refer to AN-1140)
time as Coss while VDS is rising from 0 to 80% VDSS
This value determined from sample failure population ,
.
starting TJ = 25°C, L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
http://www.irf.com/technical-info/appnotes/an-1140.pdf
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Max RDS(on) for D2Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W..
All AC and DC test condition based on old Package limitation
current = 75A.
Limited by TJmax,starting TJ = 25°C, L=0.24mH,
RG = 25Ω, IAS = 75A, VGS =10V.
2
www.irf.com
AUIRF2804/S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
MSL1
N/A
D2 PAK
TO-220
TO-262
Moisture Sensitivity Level
Class M4
Machine Model
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
ESD
Human Body Model
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF2804/S/L
10000
VGS
10000
1000
100
VGS
TOP
15V
10V
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
1000
100
10
6.0V
5.5V
BOTTOM 4.5V
5.0V
BOTTOM 4.5V
4.5V
20μs PULSE WIDTH
4.5V
20μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
300
250
200
150
100
50
T
J
= 25°C
J
T
= 175°C
J
T
= 175°C
T
= 25°C
J
V
= 10V
V
= 10V
DS
20μs PULSE WIDTH
DS
20μs PULSE WIDTH
1
0
4.0
5.0
6.0
7.0
8.0
9.0
0
40
80
120
160
200
V
, Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF2804/S/L
20
16
12
8
12000
10000
8000
6000
4000
2000
V
C
= 0V,
f = 1 MHZ
SHORTED
I = 75A
GS
D
= C + C , C
iss
gs
gd
ds
V
= 32V
DS
C
= C
rss
gd
VDS= 20V
VDS= 8.0V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
0
40
80
120
160
200
240
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1000
100
10
100μsec
1msec
10msec
T
= 25°C
1.0
Tc = 25°C
Tj = 175°C
Single Pulse
J
V
= 0V
GS
0.1
1
0.2
0.6
SD
1.4
1.8
2.2
0
1
10
100
V
, Source-toDrain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF2804/S/L
300
2.0
1.5
1.0
0.5
Limited By Package
250
I
= 75A
D
V
= 10V
GS
200
150
100
50
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-008
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2804/S/L
15V
1200
1000
800
600
400
200
0
I
D
TOP
31A
53A
DRIVER
+
L
V
DS
BOTTOM 75A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250μA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2804/S/L
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
100
assuming Δ Tj = 25°C due to
avalanche losses
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
600
TOP
BOTTOM 10% Duty Cycle
= 75A
Single Pulse
500
400
300
200
100
0
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
I
D
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRF2804/S/L
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF2804/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF2804
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2804/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUIRF2804S
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF2804/S/L
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PartNumber
AUIRF2804L
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF2804/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
15.22 (.601)
23.90 (.941)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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13
AUIRF2804/S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF2804
AUIRF2804L
AUIRF2804S
TO-220
TO-262
D2Pak
Tube
Tube
Tube
AUIRF2804
AUIRF2804L
AUIRF2804S
50
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF2804STRL
AUIRF2804STRR
14
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AUIRF2804/S/L
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
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products and applications using IR components. To minimize the risks with customer products and applications,
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15
相关型号：
AUIRF2804STRL7P
Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
INFINEON
AUIRF2903ZS
Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
INFINEON
AUIRF2903ZSTRL
Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
INFINEON
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