AUIRF2805STRL [INFINEON]
Advanced Planar Technology; 高级平面技术
| 型号： | AUIRF2805STRL |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology |
| 文件： | 总14页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96383A
AUTOMOTIVE GRADE
AUIRF2805S
AUIRF2805L
HEXFET® Power MOSFET
Features
D
S
AdvancedPlanarTechnology
LowOn-Resistance
Dynamic dV/dT Rating
175°COperatingTemperature
Fast Switching
V(BR)DSS
55V
RDS(on) max.
ID
4.7m
135A
Ω
G
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistancepersiliconarea.Thisbenefitcombinedwith
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliabledeviceforuseinAutomotiveandawidevarietyof
otherapplications.
D2Pak
AUIRF2805S
TO-262
AUIRF2805L
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
135
96
Units
I
I
I
@ T = 25°C
C
D
D
@ T = 100°C
A
C
700
200
1.3
DM
W
W/°C
V
P
@T = 25°C
Power Dissipation
D
C
Linear Derating Factor
±20
380
920
V
EAS
Gate-to-Source Voltage
GS
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested value
Avalanche Current
mJ
EAS (Tested)
IAR
A
See Fig.12a,12b, 15,16
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
2.0
dv/dt
V/ns
-55 to + 175
T
T
J
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
STG
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
0.75
40
Units
RθJC
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient (PCB mounted)
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/29/11
AUIRF2805S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
55
–––
–––
2.0
–––
0.06
3.9
–––
–––
4.7
V
Δ
Δ
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 104A
RDS(on)
VGS(th)
mΩ
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
4.0
VDS = VGS, ID = 250μA
gfs
Forward Transconductance
91
–––
20
S
V
V
DS = 25V, ID = 104A
DS = 55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA
250
200
-200
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
150
230
ID = 104A
nC VDS = 44V
VGS = 10V
38
57
52
78
14
–––
–––
–––
–––
VDD = 28V
120
68
ID = 104A
td(off)
tf
Ω
RG = 2.5
Turn-Off Delay Time
Fall Time
ns
110
VGS = 10V
LD
Internal Drain Inductance
Between lead,
D
S
–––
–––
4.5
7.5
–––
–––
nH 6mm (0.25in.)
Between lead,
G
LS
Internal Source Inductance
and center of die contact
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
5110
1190
210
–––
–––
–––
–––
–––
–––
VGS = 0V
Coss
Crss
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig.5
pF
Coss
Coss
Coss eff.
6470
860
VGS = 0V, VDS = 1.0V, ƒ =1.0MHz
VGS = 0V, VDS = 44V, ƒ =1.0MHz
VGS = 0V, VDS = 0V to 44V
Output Capacitance
Effective Output Capacitance
1600
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
MOSFET symbol
S
–––
–––
175
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
SM
–––
–––
700
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
80
1.3
120
430
V
T = 25°C, I = 104A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 104A
J F
rr
di/dt = 100A/μs
Q
t
290
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.08mH, RG = 25Ω, IAS = 104A.
(See Figure 12).
ISD ≤ 104A, di/dt ≤ 240A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging
This value determined from sample failure population
Starting TJ = 25°C, L = 0.08mH, RG = 25Ω, IAS = 104A.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
time as Coss while VDS is rising from 0 to 80% VDSS
.
2
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AUIRF2805S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
MSL1
N/A
3L-D2 PAK
3L-TO-262
Moisture Sensitivity Level
Class M4(+/- 800V )†††
Machine Model
(per AEC-Q101-002)
Class H3A(+/- 5000V )†††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRF2805S/L
1000
100
10
1000
VGS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
100
10
175A
=
I
D
T
= 25°C
J
2.5
2.0
1.5
1.0
0.5
0.0
T
= 175°C
J
V
= 25V
DS
20μs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
T , Junction Temperature
(
C)
J
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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AUIRF2805S/L
20
16
12
8
10000
8000
6000
4000
2000
V
C
= 0V,
= C
f = 1 MHZ
+ C C
GS
V
= 44V
I = 104A
D
DS
,
iss
gs
gd
ds
VDS= 28V
SHORTED
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
4
Coss
Crss
0
0
0
40
Q
80
120
160
200
240
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
1
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
DS
V
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRF2805S/L
140
RD
LIMITED BY PACKAGE
VDS
120
100
80
60
40
20
0
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
175
°
V
T , Case Temperature ( C)
C
DS
90%
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
P
2
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2805S/L
800
600
400
200
0
I
D
TOP
42.5A
73.5A
BOTTOM 104A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
°
Starting T , Junction Temperature ( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
4.0
10 V
Q
Q
GD
GS
I
= 250μA
D
3.0
2.0
1.0
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
.2μF
12V
.3μF
T
J
+
V
DS
D.U.T.
-
V
GS
Fig 14. Threshold Voltage Vs. Temperature
3mA
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2805S/L
10000
Duty Cycle = Single Pulse
1000
100
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
Δ
0.01
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
1
0.1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
400
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 104A
Single Pulse
I
D
300
200
100
0
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF2805S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
+
-
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
[
V
=10V] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
]
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
[
]
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRF2805S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUF2805S
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2805S/L
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PartNumber
AUF2805L
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF2805S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
12
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AUIRF2805S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF2805L
AUIRF2805S
TO-262
D2Pak
Tube
Tube
AUIRF2805L
AUIRF2805S
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF2805STRL
AUIRF2805STRR
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13
AUIRF2805S/L
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)
reservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproducts
andservicesatanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignatedwiththe
“AU”prefixfollowautomotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuance
andprocesschangenotification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetime
oforderacknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalteration
andisaccompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformation
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
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or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplant
intothebody, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
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For technical support, please contact IR’s Technical Assistance Center
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14
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