AUIRF2807 [INFINEON]

Advanced Planar Technology, Low On-Resistance; 高级平面技术，低导通电阻


型号：	AUIRF2807
厂家：	Infineon
描述：	Advanced Planar Technology, Low On-Resistance 高级平面技术，低导通电阻晶体晶体管功率场效应晶体管开关脉冲局域网
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中文：	中文翻译
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PD - 96384A

AUIRF2807

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

V_(BR)DSS

75V

AdvancedPlanarTechnology

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

R_DS(on)max.

13m

82A

I_{D(Silicon Limited)}

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

I_{D (Package Limited)}

75A

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve low

on-resistancepersiliconarea.Thisbenefitcombinedwith

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for, pro-

videsthedesignerwithanextremelyefficientandreliable

device for use in Automotive and a wide variety of other

applications.

TO-220AB

AUIRF2807

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

@ T = 25°C

280

230

1.5

±20

340

W/°C

Power Dissipation

@T = 25°C

Linear Derating Factor

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

5.9

Peak Diode Recovery dv/dt

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

0.65

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

°C/W

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/09/11

AUIRF2807

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1mA

_GS= 10V, I_D= 43A

V_DS= V_GS, I_D= 250μA

_DS= 50V, I_D= 43A

V_(BR)DSS

–––

0.074

–––

ΔV_(BR)DSS/ΔT_J

Breakdown Voltage Temp. Coefficient

–––

2.0

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

4.0

gfs

Forward Transconductance

–––

I_DSS

Drain-to-Source Leakage Current

–––

μA V_DS= 75V, V_GS= 0V

250

100

-100

V_DS= 60V, V_GS= 0V, T_J= 150°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= 20V

V_GS= -20V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

160

I_D= 43A

nC V_DS= 60V

V_GS= 10V, See Fig.6 and 13

–––

V_DD= 38V

I_D= 43A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 2.5Ω

V_GS= 10V,, See Fig.10

Between lead,

L_D

Internal Drain Inductance

–––

4.5

7.5

–––

nH 6mm (0.25in.)

Between lead,

L_S

Internal Source Inductance

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

–––

3820

610

–––

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

130

ƒ = 1.0MHz, See Fig.5

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

–––

(Body Diode)

Pulsed Source Current

showing the

integral reverse

–––

280

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

100

410

1.2

150

610

T = 25°C, I = 43A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

T = 25°C, I = 43A

J F

di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

Starting T_J= 25°C, L = 370μH, R_G= 25Ω, I_AS= 43A, V_GS=10V (See Figure 12)

I_SD≤ 43A, di/dt ≤ 300A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C

Pulse width ≤ 400μs; duty cycle ≤ 2%.

ꢀ This is a calculated value limited to T_J= 175°C .

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

www.irf.com

AUIRF2807

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by

extension of the higher Automotive level.

3L-TO-220

N/A

Moisture Sensitivity Level

Class M4(+/- 800V )^†††

(per AEC-Q101-002)

Machine Model

Class H1C(+/- 2000V )^†††

(per AEC-Q101-001)

Human Body Model

ESD

Class C5(+/- 2000V )^†††

(per AEC-Q101-005)

Charged Device Model

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.

††

††† Highest passing voltage

www.irf.com

AUIRF2807

1000

100

1000

VGS

15V

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

4.5V

20μs PULSE WIDTH

T = 175 C

20μs PULSE WIDTH

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1000

100

71A

T = 25 C

T = 175 C

= 25V

20μs PULSE WIDTH

=10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

4.0

5.0

6.0

7.0 8.0

9.0

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

AUIRF2807

7000

6000

5000

4000

3000

2000

1000

= 43A

= 0V,

f = 1 MHZ

= C + C

SHORTED

iss

= 60V

= 37V

= 15V

= C

rss

= C + C

oss

Ciss

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

160

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

OPERATION IN THIS AREA

LIMITED BY R

(on)

100

T = 175 C

100μsec

1msec

T = 25 C

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

= 0 V

2.0

0.1

0.0

0.4

0.8

1.2

1.6

2.4

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

www.irf.com

AUIRF2807

100

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

Fig 10a. Switching Time Test Circuit

100

125

150

175

T , Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%

d(on)

d(off)

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

SINGLE PULSE

(THERMAL RESPONSE)

0.02

0.01

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

AUIRF2807

600

500

400

300

200

100

TOP

18A

30A

15V

BOTTOM 43A

DRIVER

D.U.T

20V

0.01

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

(BR)DSS

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

.2μF

12V

.3μF

Fig 12b. Unclamped Inductive Waveforms

D.U.T.

3mA

V_GS

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Charge

Fig 13a. Basic Gate Charge Waveform

www.irf.com

AUIRF2807

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

_=10V] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET^®power MOSFETs

www.irf.com

AUIRF2807

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

PartNumber

AUF2807

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

AUIRF2807

Ordering Information

Base part

Package Type

Standard Pack

Form

Complete Part Number

Quantity

AUIRF2807

TO-220

Tube

AUIRF2807

www.irf.com

AUIRF2807

IMPORTANTNOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproducts

and services at any time and to discontinue any product or services without notice. Part numbers designated with the

“AU”prefixfollowautomotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuance

and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time

oforderacknowledgment.

IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewith

IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to

supportthiswarranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproduct

is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration

andisaccompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformation

with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered

documentation. Information of third parties may be subject to additional restrictions.

ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproduct

or service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant

into the body, or in other applications intended to support or sustain life, or in any other application in which the failure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR

productsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifierand

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the

design or manufacture of the product.

OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,are

designed and manufactured to meet DLA military specifications required by certain military, aerospace or other

applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in

applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for

compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific

IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel:(310)252-7105

www.irf.com

AUIRF2807 [INFINEON]

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