AUIRF3004WL [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | AUIRF3004WL |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总10页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97677
AUTOMOTIVE GRADE
AUIRF3004WL
HEXFET® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 50% Lower Lead Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
S
V(BR)DSS
40V
1.27m
1.40m
386A
RDS(on) typ.
Ω
Ω
max.
ID (Silicon Limited)
ID (Package Limited)
G
240A
Description
Specifically design for automotive applications this Widelead TO-
262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicondie.Thisgreatlyhelpsinreducingconditionlosses,achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junctionoperatingtemperature,fastswitchingspeedandimproved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
S
D
G
TO-262 WideLead
Automotive and other applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
386
273
A
240
1544
PD @TC = 25°C
W
375
Maximum Power Dissipation
2.5
Linear Derating Factor
W/°C
V
VGS
± 20
470
Gate-to-Source Voltage
Single Pulse Avalanche Energy
EAS (Thermally limited)
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
6.1
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
Rθ
–––
Junction-to-Case
0.40
°C/W
JC
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
05/13/11
AUIRF3004WL
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.038 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
V
––– 1.27 1.40
2.0 ––– 4.0
330 ––– –––
VGS = 10V, ID = 195A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 195A
mΩ
V
Forward Transconductance
S
RG
Internal Gate Resistance
–––
2.7
–––
20
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
VDS = 40V, VGS = 0V
μA
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 32V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
GS = -20V
nA
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Gate-to-Source Charge
Min. Typ. Max. Units
––– 140 210
Conditions
Qg
ID = 232A
DS =20V
VGS = 10V
Qgs
–––
–––
–––
–––
53
49
91
19
–––
–––
–––
–––
V
nC
ns
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Qsync
ID = 232A, VDS =0V, VGS = 10V
VDD = 26V
td(on)
Turn-On Delay Time
tr
Rise Time
––– 220 –––
––– 90 –––
ID = 232A
td(off)
Turn-Off Delay Time
R = 2.7
Ω
G
tf
Fall Time
––– 130 –––
––– 9450 –––
––– 1930 –––
––– 975 –––
––– 2330 –––
––– 2815 –––
VGS = 10V
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 32V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz, See Fig.5
pF
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 32V , See Fig.11
GS = 0V, VDS = 0V to 32V
V
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– –––
Conditions
MOSFET symbol
D
IS
Continuous Source Current
386
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
––– ––– 1544
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
62
V
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
–––
–––
–––
–––
–––
41
51
62
99
2.3
ns
IF = 232A
di/dt = 100A/μs
77
Qrr
Reverse Recovery Charge
93
nC
A
149
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.(Refer to AN-1140
ISD ≤ 232A, di/dt ≤ 907A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
Coss while VDS is rising from 0 to 80% VDSS
Rθ is measured at TJ approximately 90°C.
.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 50Ω, IAS = 232A, VGS =10V. Part not recommended for use
above this value.
2
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AUIRF3004WL
10000
1000
100
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 175°C
≤
≤
1
10
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10000
1000
100
10
2.0
1.5
1.0
0.5
0.0
I
= 195A
= 10V
D
V
GS
T = 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 232A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
V
V
= 32V
= 20V
rss
oss
gd
= C + C
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
0
20 40 60 80 100 120 140 160 180 200
1
10
, Drain-to-Source Voltage (V)
100
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
AUIRF3004WL
10000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1000
100μsec
T
J
= 175°C
100
10
Limited by package
1msec
T = 25°C
J
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
56
54
52
50
48
46
44
42
40
Id = 5mA
Limited By Package
300
200
100
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T
, Temperature ( °C )
J
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
2000
I
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1800
1600
1400
1200
1000
800
TOP
45A
86A
BOTTOM 232A
600
400
200
0
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
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AUIRF3004WL
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
0.01
τ
J τJ
τ
τ
Cτ
0.2063 0.017817
0.0394 0.000116
0.1534 0.002614
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
www.irf.com
5
AUIRF3004WL
500
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 232A
Single Pulse
I
400
300
200
100
0
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
4.0
3.5
3.0
2.5
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
2.0
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
Fig 16. Threshold Voltage vs. Temperature
6
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AUIRF3004WL
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
Ω
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VGS
90%
+
-
VDD
D.U.T
10%
VDS
VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(off)
td(on)
tf
tr
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
AUIRF3004WL
TO-262 WideLead Package Outline
Dimensions are shown in millimeters (inches)
TO-262 WideLead Part Marking Information
Part Number
AUIRF3004WL
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF3004WL
Ordering Information
Base part number
Package Type
Standard Pack
Form
Complete Part Number
AUIRF3004WL
Quantity
AUIRF3004WL
TO-262 WideLead
Tube
50
www.irf.com
9
AUIRF3004WL
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
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such statements.
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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相关型号：
AUIRF3504
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