AUIRF3205Z [INFINEON]
HEXFET? Power MOSFET; HEXFET㈢功率MOSFET型号: | AUIRF3205Z |
厂家: | Infineon |
描述: | HEXFET? Power MOSFET |
文件: | 总14页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
HEXFET® Power MOSFET
Features
●
●
●
●
●
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
D
S
V(BR)DSS
55V
6.5m
RDS(on) max.
Ω
G
ID (Silicon Limited)
ID (Package Limited)
110A
75A
●
●
Lead-Free,RoHSCompliant
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
D
D
S
S
D
G
D
G
D2Pak
TO-220AB
AUIRF3205Z
AUIRF3205ZS
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Max.
110
78
Units
(Silicon Limited)
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
A
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
@ T = 25°C
C
75
440
DM
P
@T = 25°C
C
Power Dissipation
170
1.1
W
W/°C
V
D
Linear Derating Factor
Gate-to-Source Voltage
V
± 20
GS
EAS
180
250
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
EAS (tested )
Avalanche Current
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.90
–––
62
Units
°C/W
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
AUIRF3205Z/ZS
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
55
Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
0.051
4.9
–––
–––
6.5
V
–––
–––
2.0
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 66A
VGS(th)
–––
–––
–––
–––
–––
–––
4.0
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 66A
gfs
IDSS
Forward Transconductance
71
–––
20
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
250
200
-200
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
76
21
30
18
95
45
67
4.5
110
–––
–––
–––
–––
–––
–––
–––
ID = 66A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V
VDD = 28V
ID = 66A
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
ns
RG = 6.8
VGS = 10V
Between lead,
LD
Internal Drain Inductance
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
3450
550
–––
–––
–––
–––
–––
–––
Coss
Crss
Coss
Coss
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
310
pF
ƒ = 1.0MHz
1940
430
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Output Capacitance
Coss eff.
Effective Output Capacitance
640
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
440
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
28
1.3
42
38
V
T = 25°C, I = 66A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 66A, VDD = 25V
J F
di/dt = 100A/µs
rr
Q
t
25
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure population, starting
TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 66A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 66A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
2
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AUIRF3205Z/ZS
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
TO-220AB
TO-262
D2Pak
N/A
N/A
Moisture Sensitivity Level
MSL1
Machine Model
Class M4 (425V)
AEC-Q101-002
Class H1C (2000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF3205Z/ZS
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
100
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1000
T
= 175°C
J
T
= 25°C
J
100
80
60
40
20
0
T
= 175°C
J
100
10
1
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 25V
20µs PULSE WIDTH
DS
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0
20
40
60
80
100
I
Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
D,
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRF3205Z/ZS
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
I = 66A
D
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
= 44V
DS
= C
rss
oss
gd
VDS= 28V
VDS= 11V
= C + C
ds
gd
Ciss
4
Coss
Crss
0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF3205Z/ZS
120
2.5
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 66A
D
V
= 10V
100
80
60
40
20
0
GS
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3205Z/ZS
15V
350
300
250
200
150
100
50
ID
27A
47A
TOP
DRIVER
+
L
V
DS
BOTTOM 66A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
Charge
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
-75 -50 -25
0
25 50 75 100 125 150 175
0
1K
T , Temperature ( °C )
J
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
7
AUIRF3205Z/ZS
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
0.01
∆
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
10
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 66A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
40
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF3205Z/ZS
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF3205Z/ZS
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF3205Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3205Z/ZS
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRF3205ZS
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF3205Z/ZS
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF3205Z/ZS
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF3205Z
AUIRF3205ZS
TO-220
D2Pak
Tube
Tube
50
50
AUIRF3205Z
AUIRF3205ZS
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF3205ZSTRL
AUIRF3205ZSTRR
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13
AUIRF3205Z/ZS
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix
follow automotive industry and / or customer specific requirements with regards to product discontinuance and process
change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications, customers
should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
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or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
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the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the
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applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
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相关型号:
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INFINEON
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