AUIRF3315S [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AUIRF3315S |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总12页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97733
AUTOMOTIVE GRADE
AUIRF3315S
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l LowOn-Resistance
D
VDSS
RDS(on) max.
150V
82m
l
Dynamic dV/dT Rating
l 175°COperatingTemperature
l Fast Switching
G
ID
21A
l
Fully Avalanche Rated
S
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free,RoHSCompliant
l Automotive Qualified *
D
Description
S
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
D
G
D2Pak
AUIRF3315S
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Max.
21
Units
A
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
15
84
Pulsed Drain Current
DM
P
P
@TA = 25°C
@TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
3.8
94
W
D
D
Linear Derating Factor
Gate-to-Source Voltage
0.63
± 20
W/°C
V
V
GS
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
350
12
mJ
A
Repetitive Avalanche Energy
EAR
9.4
mJ
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
T
J
2.5
V/ns
°C
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
Typ.
–––
Max.
1.6
Units
°C/W
Junction-to-Case
RJC
RJA
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/3/11
AUIRF3315S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
150 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
VDSS/TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
–––
–––
–––
–––
–––
82
4.0
25
VGS = 10V, ID = 12A
V
m
VGS(th)
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.6
32
95
11
nC ID = 12A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
V
DS = 120V
47
VGS = 10V
–––
–––
–––
–––
–––
ns
VDD = 75V
ID = 12A
td(off)
tf
Turn-Off Delay Time
Fall Time
49
RG = 5.1
RD = 5.9
38
D
S
LD
Internal Drain Inductance
4.5
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
pF
Output Capacitance
–––
–––
300
160
–––
–––
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
21
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
–––
84
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 43A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
1.3
V
trr
Qrr
T = 25°C, I = 43A
J F
di/dt = 100A/μs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
174
1.2
260
1.7
ns
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
Notes:
Pulse width 300µs; duty cycle 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting TJ = 25°C, L = 4.9mH, RG = 25,
IAS = 12A. (See Figure 12)
ISD 12A, di/dt 140A/µs, VDD V(BR)DSS
TJ 175°C.
ꢀ When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C
,
2
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AUIRF3315S
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D2Pak
Moisture Sensitivity Level
MSL1
Class M4 (+/- 600V)†††
Machine Model
AEC-Q101-002
Class H1C (+/- 2000V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device Model
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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AUIRF3315S
4
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AUIRF3315S
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5
AUIRF3315S
6
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AUIRF3315S
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7
AUIRF3315S
8
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AUIRF3315S
D2Pak Package Outline
(Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUIRF3315S
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF3315S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3315S
Ordering Information
Base part number Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF3315S
D2Pak
Tube
Tape and Reel Left
Tape and Reel Right
50
800
800
AUIRF3315S
AUIRF3315STRL
AUIRF3315STRR
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AUIRF3315S
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproducts
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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withalterationsisanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
orservicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptive
business practice. IR is not responsible or liable for any such statements.
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the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
theIRproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproducts
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designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designationAU. Buyersacknowledgeandagreethat,iftheyuseanynon-designatedproductsinautomotiveapplications,
IR will not be responsible for any failure to meet such requirements.
Fortechnicalsupport,pleasecontactIRsTechnicalAssistanceCenter
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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INFINEON
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