AUIRF7675M2TR1 [INFINEON]
DirectFETPower MOSFET;
| 型号： | AUIRF7675M2TR1 |
| 厂家： | 
Infineon |
| 描述： | DirectFETPower MOSFET 放大器 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -97552
AUIRF7675M2TR
AUIRF7675M2TR1
DirectFET Power MOSFET
AUTOMOTIVE GRADE
• Advanced Process Technology
V(BR)DSS
150V
47m
56m
1.2
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 250W per Channel into 4Ω with No Heatsink
• Dual Sided Cooling
RDS(on) typ.
max.
RG (typical)
Qg (typical)
21nC
• 175°C Operating Temperature
S
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
G
D
D
S
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline
M2
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Max.
150
± 20
18
Parameter
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
DS
GS
V
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
@ TC = 25°C
D
D
D
13
A
@ TC = 100°C
@ TA = 25°C
4.4
90
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
72
I
DM
45
Power Dissipation
P
P
@TC = 25°C
@TA = 25°C
D
D
W
2.7
59
Power Dissipation
EAS
AS (tested)
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
170
E
IAR
A
See Fig.18a, 18b, 15, 16
EAR
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
mJ
270
T
T
T
P
-55 to + 175
°C
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
3.3
RθJA
RθJ-Can
RθJ-PCB
–––
1.4
Junction-to-PCB Mounted
–––
0.3
Linear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
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1
8/16/10
AUIRF7675M2TR/TR1
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
150
–––
–––
3.0
–––
0.16
47
–––
V
V
/ T
ΔΒ DSS Δ
––– V/°C
J
VGS = 10V, ID = 11A
RDS(on)
56
mΩ
V
VDS = VGS, ID = 100μA
VGS(th)
4.0
5.0
V
/ T
Δ
GS(th) Δ
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
16
-11
––– mV/°C
J
VDS = 50V, ID = 11A
gfs
RG
–––
1.2
–––
5.0
S
Ω
Gate Resistance
–––
–––
–––
–––
–––
V
V
V
V
DS = 150V, VGS = 0V
DS = 150V, VGS = 0V, TJ = 125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
μA
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
nC
GS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
21
5.2
1.6
7.1
7.1
8.7
8.8
10
32
VDS = 75V
GS = 10V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Qgs2
Qgd
ID = 11A
Qgodr
See Fig. 6 and 17
Qsw
V
DS = 16V, VGS = 0V
DD = 75V, VGS = 10V
Qoss
td(on)
tr
nC
ns
V
Turn-On Delay Time
Rise Time
ID = 11A
R =6.8
13
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
14
G
7.5
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 1360 –––
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
190
41
–––
–––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 120V, f=1.0MHz
––– 1210 –––
––– 92 –––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
D
S
IS
–––
–––
18
showing the
(Body Diode)
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
72
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VDD = 25V
di/dt = 100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
63
1.3
95
V
ns
nC
Qrr
180
270
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Mounted to a PCB with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
2
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AUIRF7675M2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This product has passed an Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
SMALL CAN
MSL1, 260°C
Class M4 (+/-400V)
Machine Model
AEC-Q101-002
Class H1B (+/-1000V)
AEC-Q101-001
Class HC4 (+/-1000V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7675M2TR/TR1
100
100
10
1
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
BOTTOM
BOTTOM
5.0V
5.0V
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 175°C
≤
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
200
160
120
80
Vgs = 10V
I
= 11A
D
120
100
80
T = 125°C
J
T = 125°C
J
T = 25°C
J
60
T = 25°C
J
40
40
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
100
3.0
I
= 11A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
10
1
0.1
T = -40°C
J
TJ = 25°C
TJ = 175°C
V
= 50V
DS
60μs PULSE WIDTH
≤
0.01
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
4
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AUIRF7675M2TR/TR1
100
10
1
5.5
4.5
3.5
2.5
1.5
T = -40°C
J
TJ = 25°C
TJ = 175°C
I
I
I
I
= 100μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
V
= 0V
1.0
GS
0.1
0.2
0.4
0.6
0.8
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
V
, Source-to-Drain Voltage (V)
SD
T
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
50
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
T = 25°C
= C
J
rss
oss
gd
= C + C
40
ds
gd
T = 175°C
30
20
10
0
J
C
iss
C
oss
C
rss
V
= 10V
DS
380μs PULSE WIDTH
10
0
4
8
12
16
20
24
1
10
, Drain-to-Source Voltage (V)
100
I ,Drain-to-Source Current (A)
V
D
DS
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
20
I = 11A
D
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
12
10
8
16
12
8
6
4
4
2
0
0
0
4
8
12
16
20
24
28
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
T
, Case Temperature (°C)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7675M2TR/TR1
250
200
150
100
50
1000
OPERATION IN THIS AREA
I
D
LIMITED BY R (on)
DS
TOP
2.2A
4.5A
BOTTOM 11A
100
100μsec
10
1msec
1
Tc = 25°C
10msec
Tj = 175°C
Single Pulse
DC
0.1
0
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
, Drain-toSource Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι
(sec)
0.1
0.01
0.02
0.01
τJ
1.381063 0.007407
1.312033 0.039921
0.104573 2.1E-05
0.501388 0.000741
τC
τJ
τ1
τC
τ
τ
3 τ3
τ4
2τ2
τ1
τ4
Ci= τi/Ri
Ci=
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
0.1
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
ΔΤ
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7675M2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
60
50
40
30
20
10
0
TOP
BOTTOM 1% Duty Cycle
= 11A
Single Pulse
I
D
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V
15V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
Vgs
VCC
DUT
0
20K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
Qgs1
Qgs2
Qgodr
Qgd
RD
VDS
Fig 19b. Gate Charge Waveform
VGS
D.U.T.
V
DS
RG
+
-
90%
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
AUIRF7675M2TR/TR1
DirectFET Board Footprint, M2 (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
8
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AUIRF7675M2TR/TR1
DirectFET Outline Dimension, M2 Outline (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.201
0.156
0.018
0.024
0.032
0.032
0.032
N/A
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.78 0.82
0.78 0.82
0.78 0.82
0.246
0.189
0.152
0.014
0.023
0.031
0.031
0.031
N/A
A
B
C
D
E
F
G
H
I
N/A
N/A
J
0.38 0.42
1.10 1.20
2.30 2.40
0.68 0.74
0.09 0.17
0.02 0.08
0.015
0.043
0.090
0.027
0.003
0.001
0.017
0.047
0.094
0.029
0.007
0.003
K
L
M
P
R
DirectFET Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
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9
AUIRF7675M2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
F
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF7675M2TR). For 1000 parts on 7"
reel, order AUIRF7675M2TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
MAX
METRIC
MIN MAX
CODE
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
19.06
13.5
1.5
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
B
A
H
E
G
DIMENSIONS
IMPERIAL
METRIC
MIN
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
G
H
1.60
0.063
Notes:
Starting TJ = 25°C, L = 1.33mH, RG = 25Ω, IAS = 11A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
10
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AUIRF7675M2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of
order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product is
not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications, custom-
ers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
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or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
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into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ex-
penses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or
manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR
has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with
all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applica-
tions, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
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