AUIRF7737L2TR [INFINEON]
Power Field-Effect Transistor, 31A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7;
| 型号： | AUIRF7737L2TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 31A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96315C
AUIRF7737L2TR
AUIRF7737L2TR1
AUTOMOTIVE GRADE
Automotive DirectFET® Power MOSFET
•
•
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
V(BR)DSS
40V
RDS(on) typ.
1.5m
1.9m
Ω
Ω
•
•
•
•
•
•
max.
ID (Silicon Limited)
Qg
156A
Low Parasitic Parameters
Dual Sided Cooling
89nC
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
S
S
S
S
S
S
G
•
•
D
D
DirectFET® ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
L6
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
AbsoluteMaximumRatings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
40
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
DS
GS
V
± 20
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
156
I
I
I
@ T = 25°C
C
D
D
D
110
@ T = 100°C
C
31
A
@ TA = 25°C
ID @ TC = 25°C
315
624
I
DM
83
P
P
@TC = 25°C
@TA = 25°C
Power Dissipation
D
D
W
3.3
Power Dissipation
EAS
104
386
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested)
IAR
A
See Fig.18a, 18b, 16, 17
EAR
Repetitive Avalanche Energy
mJ
270
Peak Soldering Temperature
T
T
T
P
-55 to + 175
°C
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
1.8
RθJA
RθJCan
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
0.5
0.56
Linear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
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1
11/08/10
AUIRF7737L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
0.03
1.5
–––
–––
1.9
4.0
V
∆ ∆
V(BR)DSS/ TJ
–––
–––
2.0
V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
VGS = 10V, ID = 94A
mΩ
V
3.0
VDS = VGS, ID = 150µA
∆
V
∆
GS(th)/ TJ
Gate Threshold Voltage Coefficient
–––
100
–––
–––
–––
–––
–––
-10
––– mV/°C
V
DS = 10V, ID = 94A
–––
0.6
–––
–––
5
S
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Ω
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
–––
–––
–––
–––
µA
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
GS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
DS = 20V, VGS = 10V
Qg
Qgs1
V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
89
18
134
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 94A
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs2
Qgd
8
See Fig.11
nC
34
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
29
Qsw
42
V
DS = 16V, VGS = 0V
Qoss
td(on)
Output Charge
Turn-On Delay Time
Rise Time
39
nC
ns
VDD = 20V, VGS = 10V
ID = 94A
12
tr
19
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
22
14
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
GS = 0V
5469
1193
534
4296
1066
1615
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
MOSFET symbol
showing the
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
D
S
–––
–––
156
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
624
p-n junction diode.
IS = 94A, VGS = 0V
IF = 94A, VDD = 20V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
35
1.3
53
48
V
ns
nC
Qrr
32
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
2
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AUIRF7737L2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
LARGE-CAN
MSL1
Class M4(+/-425V)
Machine Model
(per AEC-Q101-002)
Class H1C(+/-2000V)
(per AEC-Q101-001)
N/A
Human Body Model
ESD
Charged Device
Model
(per AEC-Q101-005)
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7737L2TR/TR1
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
100
BOTTOM
BOTTOM
10
4.5V
1
4.5V
60µs
PULSE WIDTH
Tj = 25°C
≤
60µs
Tj = 175°C
PULSE WIDTH
≤
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
2.8
2.5
2.2
1.9
1.6
1.3
1.0
I
= 94A
D
5
4
3
2
1
0
T = 125°C
J
T
T
= 125°C
= 25°C
J
T = 25°C
J
Vgs = 10V
J
4
6
8
10 12 14 16
18 20
5
30 55 80 105 130 155 180 205
I , Drain Current (A)
D
Fig 4. Typical On-Resistance vs. Drain Current
V
Gate -to -Source Voltage (V)
GS,
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.0
V
= 25V
I
= 94A
DS
D
≤
60µs PULSE WIDTH
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
100
10
1
T
= -40°C
J
TJ = 25°C
TJ = 175°C
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
4
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AUIRF7737L2TR/TR1
1000
100
10
5.5
4.5
3.5
2.5
1.5
T
= -40°C
J
TJ = 25°C
TJ = 175°C
I
= 1.0A
D
ID = 1.0mA
ID = 250µA
ID = 150µA
V
= 0V
1.2
GS
1.0
0.2
0.4
0.6
0.8
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
V
, Source-to-Drain Voltage (V)
T , Temperature ( °C )
SD
J
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
300
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
250
rss
oss
gd
= C + C
T
= 25°C
J
ds
gd
200
150
100
50
C
iss
C
T
= 175°C
oss
J
C
rss
V
= 10V
DS
380µs PULSE WIDTH
0
100
0
20 40 60 80 100 120 140 160
1
10
, Drain-to-Source Voltage (V)
100
I ,Drain-to-Source Current (A)
D
V
DS
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
160
I = 94A
D
V
V
= 32V
= 20V
DS
DS
140
120
100
80
12
10
8
VDS= 8V
6
60
4
40
2
20
0
0
0
25
50
75
100
125
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
T
, Case Temperature (°C)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7737L2TR/TR1
10000
450
400
350
300
250
200
150
100
50
I
OPERATION IN THIS AREA
LIMITED BY RDS(on)
D
TOP
13A
24A
1000
BOTTOM 94A
100µsec
100
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
0.10
1
10
100
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
DS
Starting T , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
J
Fig 13. Maximum Safe Operating Area
10
1
0.1
D = 0.50
0.20
0.10
0.02
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.00501
0.93035
0.17759
0.68769
18.81575
0.022853
0.000126
0.00313
τ
0.01
0.05
τ
J τJ
τ
C
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7737L2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
120
100
80
60
40
20
0
TOP
BOTTOM 1.0% Duty Cycle
= 94A
Single Pulse
I
D
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 15)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V
15V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
Vgs
VCC
DUT
0
20K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
Qgs1
Qgs2
Qgodr
Qgd
RD
VDS
Fig 19b. Gate Charge Waveform
VGS
D.U.T.
V
DS
RG
+
-
90%
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
AUIRF7737L2TR/TR1
Automotive DirectFET® Board Footprint, L6 (Large Size Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
G
8
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AUIRF7737L2TR/TR1
Automotive DirectFET® Outline Dimension, L6 Outline (LargeSize Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.159
0.214
0.029
0.007
0.003
A
B
9.05 9.15 0.356
6.85 7.10 0.270
5.90 6.00 0.232
0.55 0.65 0.022
0.58 0.62 0.023
1.18 1.22 0.046
0.98 1.02 0.039
0.73 0.77 0.029
0.38 0.42 0.015
1.35 1.45 0.053
2.55 2.65 0.100
3.95 4.05 0.155
5.35 5.45 0.210
0.68 0.74 0.027
0.09 0.17 0.003
0.02 0.08 0.001
C
D
E
F
G
H
J
K
L
L1
L2
M
P
R
Automotive DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7737L2TR/TR1
AutomotiveDirectFET® Tape&ReelDimension(Showingcomponentorientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7737L2TR). For 1000 parts on 7"
reel, order AUIRF7737L2TR1
DIMENSIONS
METRIC
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
METRIC IMPERIAL
IMPERIAL
TR1 OPTION (QTY 1000)
METRIC IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
MAX
12.10
4.10
CODE
MIN
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
MAX
N.C
MIN
MAX
N.C
4.69
0.154
0.623
0.291
0.283
0.390
0.059
0.059
A
B
C
D
E
F
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
7.000
0.795
0.331
0.059
2.460
N.C
330.00
20.20
12.80
1.50
177.80
20.20
12.98
1.50
N.C
N.C
N.C
16.30
7.60
0.520
N.C
13.20
N.C
13.50
2.50
N.C
7.40
99.00
N.C
3.940
0.880
0.720
0.760
62.48
N.C
100.00
22.40
18.40
19.40
10.10
N.C
N.C
G
H
G
H
0.650
0.630
N.C
16.40
15.90
N.C
N.C
0.630
16.00
N.C
0.063
1.60
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.024mH, RG = 50Ω, IAS = 94A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R is measured at TJ of approximately 90°C.
θ
10
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AUIRF7737L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty.
Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide ad-
equate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
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failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
相关型号：
AUIRF7738L2TR
Power Field-Effect Transistor, 35A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7
INFINEON
AUIRF7738L2TR1
Power Field-Effect Transistor, 35A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7
INFINEON
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