AUIRFR4105_11 [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRFR4105_11 |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总12页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97597A
AUTOMOTIVEGRADE
AUIRFR4105
HEXFET® Power MOSFET
Features
D
V(BR)DSS
55V
●
●
●
●
●
●
●
AdvancedPlanarTechnology
LowOn-Resistance
RDS(on) max.
ID (Silicon Limited)
ID (Package Limited)
45m
27A
Ω
Dynamic dV/dT Rating
175°COperatingTemperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up toTjmax
G
20A
S
●
●
Lead-Free,RoHSCompliant
Automotive Qualified *
D
S
Description
G
D-Pak
AUIRFR4105
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
27
I
I
I
I
@ T = 25°C
C
D
D
D
19
@ T = 100°C
A
C
20
@ T = 25°C
C
100
DM
68
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
0.45
Linear Derating Factor
± 20
Gate-to-Source Voltage
V
GS
EAS
IAR
65
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
16
6.8
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
5.0
-55 to + 175
T
T
Operating Junction and
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
2.2
Units
Rθ
JC
Rθ
JA
Rθ
JA
Junction-to-Case
–––
–––
–––
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
50
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/05/11
AUIRFR4105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
Δ
Δ
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
–––
–––
–––
–––
–––
–––
45
4.0
–––
25
VGS = 10V, ID = 16A
Ω
V
m
VDS = VGS, ID = 250μA
gfs
IDSS
Forward Transconductance
6.5
S
VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA VDS = 55V, VGS = 0V
250
100
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
V
GS = 20V
GS = -20V
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
34
6.8
14
ID = 16A
DS = 44V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
V
VGS = 10V, See Fig. 6 & 13
VDD = 28V
–––
–––
–––
–––
–––
ID = 16A
td(off)
tf
Turn-Off Delay Time
Fall Time
31
ns
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
40
LD
D
S
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
700
240
100
–––
–––
–––
Output Capacitance
pF
V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
MOSFET symbol
27
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
100
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
57
1.6
86
V
T = 25°C, I = 16A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 16A
J F
rr
di/dt = 100A/μs
Q
t
130
200
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ꢀ Calculated continuous current based on maximum allowable
VDD = 25V, starting TJ = 25°C, L = 410μH
RG = 25Ω, IAS = 16A. (See Figure 12)
junction temperature; Package limitation current = 20A.
R is measured at Tj approximately 90°C.
θ
ISD ≤ 16A, di/dt ≤ 420A/μs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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AUIRFR4105
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Class M2 (+/- 200V)†††
Machine Model
AEC-Q101-002
Class H1B (+/- 900V)†††
Human Body Model
ESD
AEC-Q101-001
Class C5 (+/- 1125V)†††
AEC-Q101-005
Charged Device
Model
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFR4105
1000
100
10
1000
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
100
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
1
20μs PULSE WIDTH
20μs PULSE WIDTH
T
C
= 175°C
T
C
= 25°C
0.1
0.1
A
0.1
0.1
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100
I
= 26A
D
TJ = 25°C
T = 175°C
J
10
VDS = 25V
20μs PULSE WIDTH
10A
V
= 10V
GS
A
1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRFR4105
20
16
12
8
1200
1000
800
600
400
200
0
I = 16A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
gd
ds
DS
DS
= C
= C + C
C
ds
gd
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
T = 175°C
J
T = 25°C
J
100μs
1ms
T
T
= 25°C
= 175°C
C
J
V
GS
= 0V
Single Pulse
A
1
1
A
100
0.4
0.8
1.2
1.6
2.0
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRFR4105
RD
VDS
30
VGS
LIMITED BY PACKAGE
D.U.T.
25
20
15
10
5
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
0
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR4105
140
120
100
80
I
D
TOP
6.5A
11A
BOTTOM 16A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
60
DD
-
I
A
AS
10V
Ω
0.01
t
p
40
20
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
0
A
175
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
5.0 V
.3μF
Q
G
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR4105
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations
+
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
+
-
+
-
• dv/dt controlled by RG
RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRFR4105
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AUFR4105
DateCode
Y= Year
WW= Work Week
A=Automotive
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR4105
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
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AUIRFR4105
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part
Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRFR4105
Dpak
AUIRFR4105
AUIRFR4105TR
AUIRFR4105TRL
AUIRFR4105TRR
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11
AUIRFR4105
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproducts
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
withalterationsisanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
orservicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
theIRproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproducts
foranysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintendedorunauthorizeduse,evenifsuchclaimallegesthatIRwasnegligentregardingthedesignormanufactureofthe
product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designationAU. Buyersacknowledgeandagreethat,iftheyuseanynon-designatedproductsinautomotiveapplications,
IR will not be responsible for any failure to meet such requirements.
Fortechnicalsupport,pleasecontactIRsTechnicalAssistanceCenter
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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