AUIRFS8407 [INFINEON]
Advanced Process Technology New Ultra Low On-Resistance; 先进的工艺技术新的超低导通电阻
| 型号： | AUIRFS8407 |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology New Ultra Low On-Resistance |
| 文件： | 总14页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRFB8407
AUIRFS8407
AUIRFSL8407
AUTOMOTIVE GRADE
Features
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on)
40V
typ. 1.4mΩ
D
S
(SMD version) max 1.8m
Ω
G
250A
ID
ID
(Silicon Limited)
(Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
195A
D
D
D
S
S
S
D
D
G
G
G
D2Pak
AUIRFS8407
TO-262
AUIRFSL8407
TO-220AB
Applications
AUIRFB8407
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
G
Gate
D
Drain
S
Source
DC-DC Applications
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part
Number
AUIRFB8407
AUIRFSL8407
AUIRFS8407
AUIRFS8407TRL
Form
Tube
Tube
Quantity
50
AUIRFB8407
AUIRFSL8407
AUIRFS8407
AUIRFS8407
TO-220
TO-262
D2Pak
D2Pak
50
50
800
Tube
Tape and Reel Left
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
250
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
180
A
195
1000
230
PD @TC = 25°C
Maximum Power Dissipation
W
1.5
Linear Derating Factor
W/°C
V
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
350
500
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min.
40
Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
–––
0.029
1.4
–––
–––
1.8
V
ΔV(BR)DSS/ΔTJ
RDS(on) SMD
RDS(on) TO-220
VGS(th)
Breakdown Voltage Temp. Coefficient
–––
–––
–––
2.0
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
1.6
2.0
mΩ VGS = 10V, ID = 100A
3.0
4.0
V
VDS = VGS, ID = 150μA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.2
1.0
μA
VDS = 40V, VGS = 0V
150
100
-100
–––
V
DS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
RG
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter
Min.
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
VDS = 10V, ID = 100A
gfs
Forward Transconductance
–––
150
41
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Qg
Total Gate Charge
nC
ID = 100A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd
Turn-On Delay Time
Rise Time
V
V
DS =20V
GS = 10V
51
Qsync
)
99
ID = 100A, VDS =20V, VGS = 10V
VDD = 20V
td(on)
19
ns
tr
70
ID = 30A
td(off)
Turn-Off Delay Time
Fall Time
78
RG = 2.7
Ω
VGS = 10V
tf
53
Ciss
Input Capacitance
7330
1095
745
1310
1735
pF
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V
Crss
ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
V
GS = 0V, VDS = 0V to 32V , See Fig. 11
GS = 0V, VDS = 0V to 32V
C
oss eff. (TR)
Diode Characteristics
Symbol Parameter
Min.
–––
Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
250
A
A
V
MOSFET symbol
(Body Diode)
showing the
integral reverse
G
1000
ISM
VSD
Pulsed Source Current
–––
–––
(Body Diode)
Diode Forward Voltage
p-n junction diode.
–––
–––
–––
–––
–––
–––
–––
1.0
3.0
30
30
24
25
1.3
1.3
–––
–––
–––
–––
–––
–––
TJ = 25°C, IS = 100A, VGS = 0V
dv/dt
trr
Peak Diode Recovery
V/ns TJ = 175°C, IS = 100A, VDS = 40V
Reverse Recovery Time
ns
nC
A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
IF = 100A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
IRRM
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Case
JC
CS
JA
JA
Case-to-Sink, Flat Greased Surface, TO-220
°C/W
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
40
2
www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
MSL1
N/A
D2PAK
TO-220
Moisture Sensitivity Level
TO-262
Class M4 (+/- 800V)††
AEC-Q101-002
Machine Model
Class H2 (+/- 4000V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage
Notes:
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
oss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
.
C
.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 25Ω, IAS = 100A, VGS =10V.
Pulse drain current is limited by source bonding technology.
ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
3
www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
100
10
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤60μs PULSE WIDTH
1.0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
3
4
5
6
7
8
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 100A
V
V
= 32V
= 20V
D
= C + C , C SHORTED
DS
DS
iss
gs
gd ds
12
10
8
C
C
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
C
rss
4
2
0
100
0
40
Q
80
120
160
200
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
April 25, 2013
AUIRFB/S/SL8407
1000
100
10
1000
100
10
100μsec
T
= 175°C
J
1msec
Limited by Package
T
= 25°C
J
10msec
DC
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
50
LIMITED BY PACKAGE
Id = 1.0mA
200
150
100
50
48
46
44
42
0
40
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1.2
1400
I
D
1200
1000
800
600
400
200
0
TOP
22A
46A
1.0
0.8
0.6
0.4
0.2
0.0
BOTTOM 100A
0
10
20
30
40
50
25
50
75
100
125
150
175
V
Drain-to-Source Voltage (V)
DS,
Starting T , Junction Temperature (°C)
J
Fig 11. Typical COSS Stored Energy
www.irf.com © 2013 International Rectifier
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
April 25, 2013
AUIRFB/S/SL8407
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
ΔΤ
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
350
300
250
200
150
100
50
TOP
BOTTOM 1% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com © 2013 International Rectifier
6
April 25, 2013
AUIRFB/S/SL8407
6
5
4
3
2
1
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 100A
D
T
= 125°C
J
I
I
I
= 150μA
= 1.0mA
= 1.0A
D
D
D
T
= 25°C
J
4.0
6.0
8.0
10.0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
V
, Gate-to-Source Voltage (V)
GS
T
Fig 16. Typical On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
140
120
100
80
10
I
= 60A
= 34V
I
= 60A
= 34V
F
F
V
V
R
R
8
6
4
2
0
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
60
40
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
140
120
100
80
10
I
F
= 100A
= 34V
I
= 100A
= 34V
F
V
V
R
R
8
6
4
2
0
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
60
40
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 21 - Typical Stored Charge vs. dif/dt
April 25, 2013
Fig. 20 - Typical Recovery Current vs. dif/dt
www.irf.com © 2013 International Rectifier
7
AUIRFB/S/SL8407
8
7
6
5
4
3
2
1
V
= 5.5V
= 6.0V
GS
V
GS
V
= 7.0V
GS
VGS = 8.0V
VGS = 10V
0
100
200
300
400
500
I
, Drain Current (A)
D
Fig 22. Typical On-Resistance vs. Drain Current
8
www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
Ω
0.01
t
p
I
AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier
Fig 26b. Gate Charge Waveform
9
April 25, 2013
AUIRFB/S/SL8407
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB8407
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
IR Logo
AUIRFSL8407
Date Code
Y= Year
WW= Work Week
YWWA
A= Automotive, Lead Free
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS8407
Date Code
Y= Year
WW= Work Week
IR Logo
YWWA
A= Automotive, Lead Free
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12 www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
13 www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFB/S/SL8407
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all
associatedwarranties, conditions, limitations, andnotices. Reproductionofthisinformationwithalterationsisanunfairanddeceptivebusinesspractice.
IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and
any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any
such statements.
IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orinotherapplications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured
to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR
products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR
as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use
any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14 www.irf.com
© 2013 International Rectifier
April 25, 2013
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