AUIRLL2705_技术文档

AUTOMOTIVE GRADE

AUIRLL2705

HEXFET^®Power MOSFET

Features

l AdvancedPlanarTechnology

l LowOn-Resistance

l Logic Level Gate Drive

l Dynamicdv/dtRating

l 150°C Operating Temperature

l Fast Switching

D

V_(BR)DSS

R_DS(on)max.

I_D

55V

0.04Ω

3.8A

G

S

l Fully Avalanche Rated

l Repetitive Avalanche Allowed up to

Tjmax

D

l Lead-Free, RoHS Compliant

l Automotive Qualified*

S

Description

D

G

Specifically designed for Automotive applications, this

cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined

with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient

and reliable device for use in Automotive and a wide

variety of other applications.

SOT-223

AUIRLL2705

G

D

S

Gate

Drain

Source

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

95

2500

Tube

Tape and Reel

AUIRLL2705

AUIRLL2705TR

AUIRLL2705

SOT-223

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

5.2

3.8

3.0

30

Units

I

@ T_A= 25°C

@ T_A= 70°C

D

A

DM

2.1

P

@T_A= 25°C Power Dissipation (PCB Mount)

D

W

1.0

8.3

Power Dissipation (PCB Mount)

Linear Derating Factor (PCB Mount)

Gate-to-Source Voltage

@T_A= 25°C

mW/°C

V

± 16

V

GS

E_AS

I_AR

110

3.8

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

mJ

A

E_AR

dv/dt

0.10

7.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

mJ

V/ns

-55 to + 150

T

J

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

93

Max.

120

60

Units

R_θJA

Junction-to-Ambient (PCB mount, steady state)

°C/W

48

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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AUIRLL2705

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

55 ––– –––

––– 0.061 –––

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1mA

V_(BR)DSS

V

ΔV_(BR)DSS/ΔT_J

Breakdown Voltage Temp. Coefficient

–––

1.0

––– 0.040

––– 0.051

––– 0.065

V

_GS= 10V, I_D= 3.8A

_GS= 5.0V, I_D= 3.8A

R_DS(on)

V_GS(th)

Ω

Static Drain-to-Source On-Resistance

V

V_GS= 4.0V, I_D= 1.9A

V_DS= V_GS, I_D= 250μA

V_DS= 25V, I_D= 1.9A

Gate Threshold Voltage

–––

2.0

–––

25

V

S

gfs

I_DSS

Forward Transconductance

Drain-to-Source Leakage Current

5.1

–––

μA

V

_DS= 55V, V_GS= 0V

_DS= 44V, V_GS= 0V, T_J= 150°C

_GS= 16V

250

100

-100

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA

_GS= -16V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

–––

32

3.5

9.7

6.2

12

48

I_D= 3.8A

_DS= 44V

V_GS= 10V, See Fig. 6 and 9

_DD= 28V

I_D= 3.8A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

5.3

nC

ns

V

14

–––

V

t_d(off)

t_f

Ω

R_G= 6.2

Turn-Off Delay Time

Fall Time

35

22

R_D= 7.1Ω, See Fig. 10

C_iss

C_oss

C_rss

Input Capacitance

870

220

92

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

pF

V_DS= 25V

ƒ = 1.0MHz, See Fig. 5

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I

Continuous Source Current

–––

0.91

MOSFET symbol

S

(Body Diode)

Pulsed Source Current

A

showing the

integral reverse

–––

30

SM

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

58

1.3

88

V

T = 25°C, I = 3.8A, V = 0V

SD

J

S

GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns

nC

T = 25°C, I = 3.8A

J F

di/dt = 100A/μs

rr

Q

t

140

210

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11)

V_DD= 25V, starting T_J= 25°C, L = 15mH

R_G= 25Ω, I_AS= 3.8A. (See Figure 12)

I_SD≤ 3.8A, di/dt ≤ 220A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C .

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ When mounted on FR-4 board using minimum recommended

footprint.

When mounted on 1 inch square copper board, for comparison

with other SMD devices.

,

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AUIRLL2705

100

10

1

100

10

1

VGS

15V

VGS

15V

TOP

10V

7.0V

5.5V

4.5V

4.0V

3.5V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

20μs PULSE WIDTH

T

J

20μs PULSE WIDTH

= 25°C

T

J

= 150°C

A

100

A

100

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

100

I

= 3.8A

D

1.5

1.0

0.5

0.0

T = 25°C

J

T = 150°C

J

10

V_DS= 25V

20μs PULSE WIDTH

V

= 10V

GS

1

A

_5.0A

3.0

3.5

4.0

4.5

-60 -40 -20

0

20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

J

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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AUIRLL2705

1400

1200

1000

800

600

400

200

0

20

16

12

8

V

C

= 0V,

f = 1MHz

I

= 3.8A

D

GS

iss

rss

oss

= C + C

,

C

SHORTED

gs

gd

ds

V

= 44V

= 28V

DS

= C

gd

= C + C

C

iss

ds

gd

C

oss

C

rss

4

FOR TEST CIRCUIT

SEE FIGURE 9

0

A

1

10

100

0

10

20

30

40

50

V

, Drain-to-Source Voltage (V)

Q

, Total Gate Charge (nC)

DS

G

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

10

1

100

10

1

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10μs

T = 150°C

J

100μs

1ms

T = 25°C

J

10ms

T

= 25°C

= 150°C

Single Pulse

A

J

V

= 0V

GS

A

0.1

A

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

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AUIRLL2705

R_D

V_DS

Q

G

V_GS

10V

D.U.T.

Q

GD

GS

R_G

⁺V_DD

-

V

G

10V

Charge

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

V

DS

90%

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

10%

V

GS

V

GS

t

r

t

f

3mA

d(on)

d(off)

I

D

G

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

1000

100

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

P

1

DM

t

1

t

SINGLE PULSE

(THERMAL RESPONSE)

2

0.1

Notes:

1. Duty factor D = t / t

1

2

2. Peak T = P

J

x Z

+ T

thJA

DM

A

0.01

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

10000

t₁, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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250

200

150

100

50

I

D

TOP

1.7A

3.0A

BOTTOM 3.8A

15V

DRIVER

+

L

V

DS

D.U.T

R

G

V

DD

-

I

A

AS

20V

Ω

0.01

t

p

V

= 25V

50

Fig 12a. Unclamped Inductive Test Circuit

DD

0

A

150

25

75

100

125

Starting T , Junction Temperature (°C)

J

V

(BR)DSS

t

p

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

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AUIRLL2705

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

+

-

+

-

+

-

V_DD

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

*

Driver Gate Drive

P.W.

Period

D =

P.W.

V

=10V

GS

D.U.T. I Waveform

SD

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS

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AUIRLL2705

SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

LL2705

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRLL2705

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)

3.90 (.154)

0.35 (.013)

0.25 (.010)

1.85 (.072)

1.65 (.065)

2.05 (.080)

1.95 (.077)

TR

7.55 (.297)

7.45 (.294)

16.30 (.641)

15.70 (.619)

7.60 (.299)

7.40 (.292)

1.60 (.062)

1.50 (.059)

TYP.

FEED DIRECTION

2.30 (.090)

2.10 (.083)

7.10 (.279)

6.90 (.272)

12.10 (.475)

11.90 (.469)

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519)

12.80 (.504)

15.40 (.607)

11.90 (.469)

4

330.00

(13.000)

MAX.

50.00 (1.969)

MIN.

18.40 (.724)

MAX.

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

4

3

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRLL2705

Qualification Information^†

Automotive

††

(per AEC-Q101)

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive

level.

Qualification Level

SOT-223

MSL1

Class M2 (+/- 200V)^†††

AEC-Q101-002

Moisture Sensitivity Level

Machine Model

Class H1B (+/- 750V)^†††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 1125V)^†††

AEC-Q101-005

Yes

Charged Device Model

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage.

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AUIRLL2705

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-

iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other

changes to its products and services at any time and to discontinue any product or services without notice.

Part numbers designated with the AU prefix follow automotive industry and / or customer specific

requirements with regards to product discontinuance and process change notification. All products are sold

subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in

accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent

IR deems necessary to support this warranty. Except where mandated by government requirements, testing

of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible

for their products and applications using IR components. To minimize the risks with customer products and

applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without

alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction

of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable

for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for

that product or service voids all express and any implied warranties for the associated IR product or service

and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical

implant into the body, or in other applications intended to support or sustain life, or in any other application

in which the failure of the IR product could create a situation where personal injury or death may occur. Should

Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify

and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even

if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of

Defense, are designed and manufactured to meet DLA military specifications required by certain military,

aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by

DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and

that they are solely responsible for compliance with all legal and regulatory requirements in connection with

such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the

specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part

number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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Revision History

Date

Comments

•

Added "Logic Level Gate Drive" bullet in the features section on page 1

Updated part marking on page 8

Updated data sheet with new IR corporate template

3/26/2014

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型号：	AUIRLL2705
厂家：	Infineon
描述：	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总12页 (文件大小：260K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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