AUIRLR3705ZTRL [INFINEON]
Logic Level Advanced Process Technology; 逻辑电平先进的工艺技术
| 型号： | AUIRLR3705ZTRL |
| 厂家： | 
Infineon |
| 描述： | Logic Level Advanced Process Technology |
| 文件： | 总13页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97611
AUTOMOTIVE GRADE
AUIRLR3705Z
Features
HEXFET® Power MOSFET
●
●
●
●
●
●
●
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Logic Level
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
D
V(BR)DSS
55V
8.0m
RDS(on) max.
ID (Silicon Limited)
ID (Package Limited)
Ω
G
89A
42A
S
Description
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
G
D-Pak
AUIRLR3705Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
@ T = 25°C
C
I
I
I
I
89
D
D
D
(Silicon Limited)
@ T = 100°C Continuous Drain Current, VGS @ 10V
63
A
C
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
@ T = 25°C
42
C
360
DM
Power Dissipation
@T = 25°C
C
P
130
W
W/°C
V
D
Linear Derating Factor
0.88
Gate-to-Source Voltage
V
± 16
GS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
110
190
mJ
E
AS (tested)
IAR
EAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
mJ
Operating Junction and
T
J
-55 to + 175
300
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Typ.
Max.
Units
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
1.14
40
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/16/2010
AUIRLR3705Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
–––
–––
–––
1.0
6.5
–––
–––
–––
–––
–––
–––
–––
8.0
11
VGS = 10V, ID = 42A
VGS = 5.0V, ID = 34A
12
VGS = 4.5V, ID = 21A
VGS(th)
Gate Threshold Voltage
3.0
–––
20
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 42A
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
89
–––
–––
–––
–––
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
44
66
ID = 42A
DS = 44V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
13
–––
–––
–––
–––
–––
–––
–––
nC
V
22
VGS = 5.0V
VDD = 28V
ID = 42A
17
150
33
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
R
G = 4.2 Ω
VGS = 5.0V
Between lead,
70
LD
D
S
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
Ciss
Input Capacitance
––– 2900 –––
Coss
Output Capacitance
–––
–––
420
230
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1550 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
320
500
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
360
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
21
1.3
42
28
V
T = 25°C, I = 42A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 42A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
14
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.12mH, RG = 25Ω, IAS = 42A,
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 42A, VGS =10V. Part not
V
GS =10V.
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
Rθ is measured at TJ approximately 90°C.
80% VDSS
.
2
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AUIRLR3705Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Class M4 (425V)
Machine Model
AEC-Q101-002
Class H1C (2000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRLR3705Z
1000
100
1000
100
10
VGS
12V
VGS
12V
TOP
TOP
10V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
10
2.8V
≤
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
100
T
= 25°C
T
= 25°C
J
J
80
60
40
20
0
T
= 175°C
J
T
= 175°C
J
V
= 15V
DS
≤ 60µs PULSE WIDTH
V
= 8.0V
DS
380µs PULSE WIDTH
1.0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
, Gate-to-Source Voltage (V)
0
10 20 30 40 50 60 70 80
Drain-to-Source Current (A)
V
GS
I
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRLR3705Z
5000
4000
3000
2000
1000
0
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 42A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 44V
DS
C
C
= C
rss
oss
gd
VDS= 28V
VDS= 11V
= C + C
ds
gd
Ciss
6
4
2
Coss
Crss
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
DC
0.1
0.1
1
10
, Drain-toSource Voltage (V)
100
V
DS
V
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
nce
Forward Voltage
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5
AUIRLR3705Z
2.5
2.0
1.5
1.0
0.5
100
I
= 42A
LIMITED BY PACKAGE
D
V
= 10V
GS
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.6984
0.000465
τ
Cτ
0.05
1 τ1
Ci= τi/Ri
τ
2τ2
0.4415
0.004358
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR3705Z
15V
500
400
300
200
100
0
I
D
TOP
5.3A
7.0A
42A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
2.0
1.5
1.0
0.5
0.0
V
G
I
I
I
= 250µA
= 150µA
= 50µA
D
D
D
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
0
1K
T
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR3705Z
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
TOP
BOTTOM 1% Duty Cycle
= 42A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRLR3705Z
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR3705Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR3705Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR3705Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRLR3705Z
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR3705Z
Dpak
AUIRLR3705Z
AUIRLR3705ZTR
AUIRLR3705ZTRL
AUIRLR3705ZTRR
12
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AUIRLR3705Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
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IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13
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