BCP6825E6327HTSA1 [INFINEON]
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
| 型号： | BCP6825E6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP68
NPN Silicon AF Transistor
• For general AF applications
• High collector current
4
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCP69 (PNP)
3
2
1
VPS05163
Type
BCP68
BCP68-25
Marking
BCP 68
BCP 68-25 1 = B
Pin Configuration
Package
SOT223
SOT223
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
Maximum Ratings
Parameter
Symbol
Values
Unit
20
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
V
CEO
CES
CBO
EBO
25
25
5
1
2
A
I
C
I
CM
mA
I
100
200
B
Peak base current
I
BM
1.5
W
Total power dissipation, T = 124 °C
P
S
tot
150
°C
Junction temperature
Storage temperature
T
j
T
-65 .. 150
Thermal Resistance
Junction - soldering point
1)
R
≤17
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
2005-07-14
BCP68
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
20
25
25
5
Characteristics
Collector-emitter breakdown voltage
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
I = 30 mA, I = 0
C
B
Collector-emitter breakdown voltage
I = 10 µA, V = 0
C
BE
Collector-base breakdown voltage
I = 10 µA, I = 0
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
-
100 nA
100 µA
Collector cutoff current
= 25 V, I = 0
I
CBO
V
CB
E
-
Collector cutoff current
= 25 V, I = 0 , T = 150 °C
I
CBO
V
CB
E
A
50
-
DC current gain 1)
I = 5 mA, V = 10 V
h
-
FE
FE
C
CE
DC current gain 1)
I = 500 mA, V = 1 V
h
h
BCP68
BCP68-25
85
160
60
-
250
-
375
375
-
C
CE
DC current gain 1)
I = 1 A, V = 1 V
FE
C
CE
-
-
0.5
V
Collector-emitter saturation voltage1)
I = 1 A, I = 100 mA
V
V
CEsat
C
B
Base-emitter voltage 1)
I = 5 mA, V = 10 V
BE(ON)
-
-
0.6
-
-
1
C
CE
I = 1 A, V = 1
C
CE
AC Characteristics
Transition frequency
-
100
-
MHz
f
T
I = 100 mA, V = 5 V, f = 100 MHz
C
CE
1) Pulse test: t ≤ 300µs, D = 2%
2
2005-07-14
BCP68
Total power dissipation P = f(T )
Transition frequency f = f (I )
tot
S
T
C
V
= 5V
CE
BCP 68
EHP00275
103
1.8
MHz
5
f T
W
1.2
0.9
0.6
0.3
0
102
5
101
100
5 101
5 102
mA
103
0
15 30 45 60 75 90 105 120
150
°C
S
T
ΙC
Collector cutoff current I
= f (T )
DC current gain h = f (I )
FE C
CBO
A
V
= 25V
V
= 1V
CB
CE
BCP 68
EHP00276
105
nA
BCP 68
EHP00277
103
5
Ι CBO
h FE
104
100 ˚C
25˚C
102
5
max
-50 ˚C
103
102
typ
101
5
101
100
100
101
104
103 mA
102
0
50
100
150
˚C
TA
100
Ι C
3
2005-07-14
BCP68
Collector-emitter saturation voltage
Base-emitter saturation voltage
I = f (V ), h = 10
I = f (V
), h = 10
C
CEsat
FE
C
BEsat
FE
BCP 68
EHP00278
BCP 68
EHP00279
104
mA
104
mA
Ι C
Ι C
103
5
103
5
˚C
˚C
100
25
˚C
-50
100 ˚C
25 ˚C
-50 ˚C
102
5
102
5
101
5
101
5
100
100
0
0.2
0.4
0.6
V
0.8
0
0.2
0.4
0.6
0.8
V
1.2
VCEsat
VBE sat
Permissible pulse load
P
/ P
= f (t )
totmax
totDC
p
BCP 68
EHP00280
103
Ptotmax
PtotDC
t p
t p
T
D
=
T
102
D
=
0.0
5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
10-1
10-6 10-5
10-4 10-3
10-2
s
101
t p
4
2005-07-14
BCP68
Package SOT223
Package Outline
±0.1
1.6
±0.2
6.5
A
0.1 MAX.
±0.1
3
B
4
+0.2
acc. to
DIN 6784
1
2
3
2.3
±0.1
0.7
4.6
M
M
0.25
A
0.25
B
Foot Print
3.5
1.2
1.1
Marking Layout
Manufacturer
Date code
2003, July
BCP52-16
(Year/Calendarweek)
Type code
Pin 1
Example
Packing
Code E6327: Reel ø180 mm = 1.000 Pieces/Reel
Code E6433: Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
8
1.75
6.8
Pin 1
5
2005-07-14
BCP68
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
6
2005-07-14
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