BCP68G-25-AA3-R [UTC]
NPN MEDIUM POWER TRANSISTOR; NPN型中功率晶体管型号: | BCP68G-25-AA3-R |
厂家: | Unisonic Technologies |
描述: | NPN MEDIUM POWER TRANSISTOR |
文件: | 总3页 (文件大小:149K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BCP68
NPN SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP69
1
SOT-223
APPLICATIONS
* General purpose switching and amplification under high current
conditions.
ORDERING INFORMATION
Ordering Number
Lead Free
BCP68L-xx-AA3-R
Pin Assignment
Package
SOT-223
Packing
Halogen Free
BCP68G-xx-AA3-R
1
2
3
B
C
E
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R207-008,E
BCP68
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C , unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
32
20
V
5
V
DC
Collector Current
Peak
1
2
A
ICM
A
Peak Base Current
IBM
200
mA
W
℃
℃
℃
Total Power Dissipation (TA ≤ 25℃)
Junction Temperature
PD
1.35
TJ
150
Operating Temperature
Storage Temperature
TOPR
TSTG
-45 ~ +150
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
91
UNIT
Junction To Ambient
θJA
℃/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
500 mV
Collector-Emitter Saturation Voltage
VCE(SAT) IC = 1A, IB =100mA
IC = 5mA, VCE = 10V
VBE
620
mV
V
Base-Emitter Voltage
IC = 1A, VCE = 1V
1
IE = 0, VCB = 25V
ICBO
100
10
nA
µA
nA
Collector Cut-off Current
Emitter Cut-off Current
IE = 0, VCB = 25V, TJ = 150℃
IEBO
hFE
IC = 0, VEB = 5V
100
IC = 5mA, VCE = 10V
50
85
60
DC Current Gain
IC = 500mA, VCE = 1V
375
IC = 1A, VCE = 1V
Collector Capacitance
Transition Frequency
CC
fT
IE = ie = 0, VCB = 5V, f = 1MHz
IC = -10mA, VCE = -5V, f = 100MHz
48
pF
40
MHz
DC Current Gain Ratio of the
Complementary Pairs
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
1.6
CLASSIFICATION OF hFE
RANK
16
25
160~375
RANGE
100~250
UNISONIC TECHNOLOGIES CO., LTD
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QW-R207-008,E
www.unisonic.com.tw
BCP68
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
DC Current Gain (Typical Values)
300
250
200
150
100
50
VCE = 1V
0
-10-1
104
102
103
10
1
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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