BF998 [INFINEON]
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz); 硅N沟道MOSFET四极管（高S / C品质因数低噪音短沟道晶体管，增益控制输入级高达1 GHz ）
| 型号： | BF998 |
| 厂家： | 
Infineon |
| 描述： | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
| 文件： | 总8页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon N Channel MOSFET Tetrode
BF 998
Features
● Short-channel transistor
with high S/C quality factor
● For low-noise, gain-controlled
input stages up to 1 GHz
Package1)
SOT-143
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
BF 998
MO
Q62702-F1129
S
D
G
2
G
1
Maximum Ratings
Parameter
Symbol
Values
12
Unit
Drain-source voltage
Drain current
V
DS
V
ID
30
mA
Gate 1/gate 2 peak source current
± IG1/2SM
10
Total power dissipation, T
S
< 76 ˚C
Ptot
200
mW
Storage temperature range
Channel temperature
T
stg
– 55 … + 150 ˚C
150
Tch
Thermal Resistance
R
th JS
< 370
K/W
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BF 998
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VG1S = – VG2S = 4 V
V
(BR) DS
12
8
–
–
–
–
–
–
–
–
–
V
Gate 1-source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR) G1SS
± V(BR) G2SS
± IG1SS
12
12
50
50
18
2.5
2
Gate 2-source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
8
Gate 1-source leakage current
± VG1S = 5 V, VG2S = VDS = 0
–
nA
Gate 2-source leakage current
± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
–
Drain current
IDSS
2
mA
V
VDS = 8 V, VG1S = 0, VG2S = 4 V
Gate 1-source pinch-off voltage
= 20 µA
– VG1S(p)
– VG2S(p)
–
V
DS = 8 V, VG2S = 4 V, I
D
Gate 2-source pinch-off voltage
= 20 µA
–
V
DS = 8 V, VG1S = 0, I
D
Semiconductor Group
2
BF 998
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
Forward transconductance
g
fs
–
–
–
–
–
–
24
–
mS
pF
V
DS = 8 V, I = 10 mA, VG2S = 4 V
D
f= 1 kHz
Gate 1 input capacitance
C
C
C
C
g1ss
g2ss
dg1
2.1
1.2
25
2.5
–
V
DS = 8 V, I = 10 mA, VG2S = 4 V
D
f= 1 MHz
Gate 2 input capacitance
V
DS = 8 V, I = 10 mA, VG2S = 4 V
D
f= 1 MHz
Reverse transfer capacitance
–
fF
V
DS = 8 V, I = 10 mA, VG2S = 4 V
D
f= 1 MHz
Output capacitance
dss
1.05
28
–
pF
dB
V
DS = 8 V, I = 10 mA, VG2S = 4 V
D
f= 1 MHz
Power gain
(test circuit 1)
= 10 mA, f = 200 MHz,
= 2 mS, G
Power gain
(test circuit 2)
= 10 mA, f = 800 MHz,
= 3.3 mS, G
G
G
F
F
ps
–
V
DS = 8 V, I
D
GG
L
= 0.5 mS, VG2S = 4 V
ps
–
20
0.6
1
–
–
–
–
V
DS = 8 V, I
D
GG
L
= 1 mS, VG2S = 4 V
Noise figure
(test circuit 1)
–
dB
V
DS = 8 V, I
D
= 10 mA, f = 200 MHz,
GG
= 2 mS, G
L
= 0.5 mS, VG2S = 4 V
Noise figure
(test circuit 2)
= 10 mA, f = 800 MHz,
= 3.3 mS, G
–
V
DS = 8 V, I
D
GG
L
= 1 mS, VG2S = 4 V
Control range
(test circuit 2)
∆Gps
40
–
V
DS = 8 V, VG2S = 4 … – 2 V
f= 800 MHz
Semiconductor Group
3
BF 998
Total power dissipation Ptot = f (T
A
)
Output characteristics I = f (VDS)
D
VG2S = 4 V
Gate 1 forward transconductance
Gate 1 forward transconductance
gfs1 = f (VG1S
)
gfs1 = f (VG2S)
V
DS = 8 V, IDSS = 10 mA, f = 1 kHz
VDS = 8 V, IDSS = 10 mA, f = 1 kHz
Semiconductor Group
4
BF 998
Gate 1 forward transconductance
Gate 1 input capacitance Cg1ss = f (VG1S
)
g
fs1 = f (I
D)
VG2S = 4 V, VDS = 8 V, IDSS = 10 mA,
V
DS = 8 V, IDSS = 10 mA, f = 1 kHz
f= 1 MHz
Gate 2 input capacitance Cg2ss = f (VG2S
G1S = 0 V, VDS = 8 V
DSS = 10 mA, f = 1 MHz
)
Output capacitance Cdss = f (VDS)
VG1S = 0 V, VG2S = 4 V
IDSS = 10 mA, f = 1 MHz
V
I
Semiconductor Group
5
BF 998
Drain current I
D
= f (VG1S
)
Power gain Gps = f (VG2S
)
VDS = 8 V
VDS = 8 V, VG1S = 0, IDSS = 10 mA,
f= 200 MHz (see test circuit 1)
Noise figure F = f (VG2S
)
Power gain Gps = f (VG2S
)
V
DS = 8 V, VG1S = 0, IDSS = 10 mA,
VDS = 8 V, VG1S = 0, IDSS = 10 mA,
f= 200 MHz (see test circuit 1)
f= 800 MHz (see test circuit 2)
Semiconductor Group
6
BF 998
Noise figure F = f (VG2S
)
Gate 1 input admittance y11s
V
DS = 8 V, VG1S = 0, IDSS = 10 mA,
VDS = 8 V, VG2S = 4 V, VG1S = 0,
f= 800 MHz (see test circuit 2)
IDSS = 10 mA (common-source)
Gate 1 forward transfer admittance y 21s
Output admittance y 22s
VDS = 8 V, VG2S = 4 V, VG1S = 0
VDS = 8 V, VG2S = 4 V, VG1S = 0
IDSS = 10 mA (common-source)
IDSS = 10 mA (common-source)
Semiconductor Group
7
BF 998
Test circuit 1 for power gain and noise figure
f= 200 MHz, G = 2 mS, G = 0.5 mS
G
L
Test circuit 2 for power gain and noise figure
f= 800 MHz, G = 3.3 mS, G = 1 mS
G
L
Semiconductor Group
8
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