BFQ19_2015 [JMNIC]
NPN 5 GHz wideband transistor;
| 型号： | BFQ19_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总6页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ19
NPN 5 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
DESCRIPTION
PINNING
PIN
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
DESCRIPTION
Code: FB
1
2
3
emitter
page
collector
base
oscilloscopes, spectrum analyzers
etc.
1
2
3
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-emitter voltage
DC collector current
CONDITIONS
TYP.
MAX.
15
UNIT
VCEO
IC
open base
−
−
−
V
100
1
mA
W
Ptot
fT
total power dissipation
transition frequency
up to Ts = 145 °C (note 1)
Ic = 50 mA; VCE = 10 V; f = 500 MHz; 5.5
−
GHz
Tj = 25 °C
Cre
F
feedback capacitance
noise figure
Ic = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
1.3
3.3
−
−
pF
dB
Ic = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
−
20
V
open base
−
15
V
open collector
−
3.3
100
150
1
V
−
mA
mA
W
°C
°C
ICM
f > 1 MHz
−
Ptot
Tstg
Tj
up to Ts = 145 °C (note 1)
−
−65
−
150
175
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN. TYP. MAX. UNIT
−
−
100
−
nA
hFE
Cc
IC = 70 mA; VCE = 10 V
25
−
80
1.6
5
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
pF
pF
pF
Ce
−
−
Cre
IC = 10 mA; VCE = 10 V; f = 1 MHz;
−
1.3
−
Tamb = 25 °C
fT
transition frequency
IC = 70 mA; VCE = 10 V; f = 500 MHz 4.4
5.5
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 50 mA; VCE = 10 V;
(note 1)
−
−
−
11.5
f = 500 MHz; Tamb = 25 °C
IC = 50 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
7.5
3.3
−
−
dB
dB
F
noise figure
IC = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
MBB774
MBB830
120
5
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
4
80
3
2
40
1
0
0
0
40
80
120
0
5
10
15
20
I
(mA)
(V)
V
C
CB
VCE = 10 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current.
Fig.3 Collector capacitance as a function of
collector-base voltage.
MBB773
8
handbook, halfpage
f
T
(GHz)
6
4
2
0
0
40
80
120
I
(mA)
C
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
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