BFQ221-T/R [NXP]
TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal;
| 型号： | BFQ221-T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal 晶体 晶体管 |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ221
NPN video transistor
1996 Sep 04
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
APPLICATIONS
PINNING
PIN
• Primarily intended for buffer stages
in high resolution colour monitors.
1
DESCRIPTION
2
3
1
2
3
base
collector
emitter
DESCRIPTION
MSB033
NPN silicon transistor encapsulated
in a 3-lead plastic SOT54 package.
Fig.1 Simplified outline SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
CONDITIONS
TYP
MAX
100
UNIT
VCBO
IC
open emitter
−
V
−
100
1.15
−
mA
W
Ptot
fT
up to Ts = 60 °C
−
IC = 25 mA; VCE = 10 V
IC = 0; VCB = 10 V
1
GHz
pF
Cre
Tj
1.7
−
−
150
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCER
VEBO
IC
PARAMETER
CONDITIONS
open emitter
MIN
MAX
UNIT
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
−
100
95
V
RBE = 100 Ω
V
open collector
3
V
see Fig.2
100
100
1.15
+150
150
mA
mA
W
°C
°C
IC(AV)
Ptot
see Fig.2
up to Ts = 60 °C; note 1; see Fig.3
Tstg
−65
Tj
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1996 Sep 04
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
MBG476
MBG477
3
10
1.2
handbook, halfpage
handbook, halfpage
I
P
C
tot
(mA)
(W)
2
10
0.8
0.4
10
0
0
1
10
2
3
o
50
100
150
10
10
T
( C)
V
(V)
s
CE
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to Ptot = 1.15 W; up to Ts = 60 °C; note 1
78
soldering point
Note
1. Ts is the temperature of the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CER collector-emitter breakdown voltage IC = 1 mA; RBE = 100 Ω
PARAMETER
CONDITIONS
MIN
100
TYP
MAX
UNIT
IC = 0.1 mA; IE = 0
−
−
−
−
−
−
V
95
3
−
−
V
V(BR)EBO emitter-base breakdown voltage
IC = 0; IE = 0.1 mA
VCE = 50 V; VBE = 0
V
ICES
hFE
collector-emitter leakage current
DC current gain
−
100
µA
IC = 25 mA; VCE = 10 V;
see Fig.4
20
−
fT
transition frequency
IC = 25 mA; VCE = 10 V;
f = 500 MHz; see Fig.5
−
−
1
−
−
GHz
pF
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
see Fig.6
1.7
1996 Sep 04
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
MBG478
MBG479
60
1.2
handbook, halfpage
handbook, halfpage
f
T
h
FE
(MHz)
0.8
40
20
0
0.4
0
2
20
50
0
20
40
60
80
I
100
(mA)
10
10
I
(mA)
C
C
VCE = 10 V; tp = 500 µs.
VCE = 10 V; f = 500 MHz.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
MBG480
4
handbook, halfpage
C
re
(pF)
3
2
1
0
0
2
4
6
8
10
(V)
V
CB
f = 1 MHz.
Fig.6 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Sep 04
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
PACKAGE OUTLINE
n
0.40
min
4.2 max
1.7
1.4
5.2 max
12.7 min
0.48
0.40
1
4.8
max
2.54
2
3
0.66
0.56
(1)
MBC014 - 1
2.0 max
Dimensions in mm.
Fig.7 SOT54.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 04
5
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