BGA855N6 [INFINEON]
GPS / GLONASS / COMPASS LNA;
| 型号： | BGA855N6 |
| 厂家： | 
Infineon |
| 描述： | GPS / GLONASS / COMPASS LNA 全球定位系统 |
| 文件： | 总13页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA855N6
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Features
•
•
•
•
•
•
•
•
•
Operating frequencies: 1164 - 1300 MHz
Insertion power gain: 17.8dB
Low noise figure: 0.60 dB
High linearity performance IIP3: 0 dBm
Low current consumption: 4.8 mA
Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
RF output internally matched to 50 Ohm
Only one external matching component needed
Specifically designed for:
0.7 x 1.1 mm2
- L2/L5 GPS Signals
- E5a/E5b/E6 Galileo Signals
- G2/G3 Glonass Signals
- B2/B3 Beidou Signals
Application
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy.
Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2
bands. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA
configurations.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Block diagram
VCC PON
AI
AO
ESD
GND
BGA855N6_Blockdiagram.vsd
Data Sheet
www.infineon.com
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data Sheet
2
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Features
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 17.8 dB
Low noise figure: 0.60 dB
Low current consumption: 4.8 mA
High linearity performance IIP3: 0 dBm
Operating frequencies: 1164 - 1300 MHz
Supply voltage: 1.1 V to 3.3 V
Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
B9HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Only one external matching component needed
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Specifically designed for:
- L2/L5 GPS Signals
- E5a/E5b/E6 Galileo Signals
- G2/G3 Glonass Signals
- B2/B3 Beidou Signals
VCC PON
AI
AO
ESD
GND
BGA855N6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA855N6
6
TSNP-6-10
Data Sheet
3
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Features
Description
The BGA855N6 is a front-end low noise amplifier for GPS L5 and L2, Galileo E5a, E5b, E6, Glonass G3, G2 and
Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and
0.60 dB noise figure at a current consumption of 4.8 mA in the application configuration described in Chapter 4.
The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V
to 3.3 V supply voltage (device optimized for 1.8V operation / also prepared to support 1.2V and 2.8V operation).
OFF-state can be enabled by PON pin.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
GND
VCC
AO
Function
1
2
3
4
5
6
Ground
DC supply
LNA output
Ground
GND
AI
LNA input
Power On Control
PON
Data Sheet
4
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Maximum Ratings
2
Maximum Ratings
Table 2
Maximum Ratings
Parameter
Symbol
VCC
Values
Typ.
Unit
Note or
Test Condition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
–
Max.
3.6
Voltage at pin VCC1)
Voltage at pin AI
–
–
–
–
–
–
–
–
V
–
–
–
–
–
–
–
–
VAI
0.9
V
Voltage at pin AO
Voltage at pin PON
Voltage at pin GND
Current into pin VCC
RF input power
VAO
VPON
VGND
ICC
VCC + 0.3
VCC + 0.3
0.3
V
V
V
16
mA
dBm
mW
PIN
–
+25
Total power dissipation,
Ptot
–
60
TS < 148 °C2)
Junction temperature
TJ
–
–
–
–
-
150
85
°C
°C
°C
V
–
–
–
–
Ambient temperature range
TA
-40
Storage temperature range
TSTG
-55
150
+2000
ESD capability all pins, HBM3) VESD_HBM -2000
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
3) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5kΩ, C = 100pF)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
5
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Electrical Characteristics
3
Electrical Characteristics
Table 3
Electrical Characteristics VCC = 1.2V1)
TA = 25 °C, VCC = 1.2 V, VPON = 1.2 V, f = 1164 - 1300 MHz
Parameter
Symbol
Values
Typ.
1.2
4.4
0.2
–
Unit Note or Test Condition
Min.
1.1
–
Max.
3.3
5.4
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON Mode
OFF Mode
ON Mode
OFF Mode
ON Mode
OFF Mode
–
–
Power on voltage
Supply current
VPON
IPON
0.8
0
VCC
0.4
3
–
V
–
1.5
–
µA
µA
dB
–
1
Insertion power gain
f = 1214MHz
Noise figure2)
f = 1214 MHz, ZS = 50 Ω
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power on time4)7)
|S21|2
NF
16.6
17.6
18.6
–
0.60
11
1.10
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
8
–
–
–
12
19
20
22
–
3
5
–
µs
OFF to ON Mode
–
Inbandinput1dB-compression IP1dB
point, f = 1214 MHz3)
-18
-14
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-6
-1
1
–
–
–
dBm
dBm
–
intercept point3)5)
f1 = 1214 MHz, f2 = f1 +/- 1 MHz
Out of band input 3rd-order
-4
–
intercept point6)7)
f1 = 1850 MHz, f2 = 2500 MHz
Stability7)
> 1
–
f = 20 MHz ... 10 GHz
1) Based on the application described in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) LNA Gain changed to 90% of final gain value (in dB)
5) Input power = -30 dBm for each tone
6) Input power = -25 dBm for each tone
7) Guaranteed by device design; not tested in production
Data Sheet
6
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Electrical Characteristics
Table 4
TA = 25 °C, VCC = 1.8 V, VPON = 1.8 V, f = 1164 - 1300 MHz
Electrical Characteristics VCC = 1.8V1)
Parameter
Symbol
Values
Typ.
1.8
4.8
0.2
–
Unit Note or Test Condition
Min.
1.1
–
Max.
3.3
5.8
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON Mode
OFF Mode
ON Mode
OFF Mode
ON Mode
OFF Mode
–
–
Power on voltage
Supply current
VPON
IPON
0.8
0
VCC
0.4
7.5
1
–
V
–
2.5
–
µA
µA
dB
–
Insertion power gain
f = 1214MHz
Noise figure2)
f = 1214 MHz, ZS = 50 Ω
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power on time4)7)
|S21|2
NF
16.8
17.8
18.8
–
0.60
12
1.10
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
9
–
–
–
12
19
20
22
–
3
5
–
µs
OFF to ON Mode
–
Inbandinput1dB-compression IP1dB
point, f = 1214 MHz3)
-15
-11
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-5
0
1
–
–
–
–
dBm
dBm
–
intercept point3)5)
f1 = 1214 MHz, f2 = f1 +/- 1 MHz
Out of band input 3rd-order
-4
–
intercept point6)7)
f1 = 1850 MHz, f2 = 2500 MHz
Stability7)
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) LNA Gain changed to 90% of final gain value (in dB)
5) Input power = -30 dBm for each tone
6) Input power = -25 dBm for each tone
7) Guaranteed by device design; not tested in production
Data Sheet
7
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Electrical Characteristics
Table 5
TA = 25 °C, VCC = 2.8 V, VPON = 2.8 V, f = 1164 - 1300 MHz
Electrical Characteristics VCC = 2.8V1)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
1.1
–
Typ.
2.8
5.4
0.2
–
Max.
3.3
6.4
3
Supply voltage
Supply current
VCC
ICC
V
–
mA
µA
V
ON Mode
OFF Mode
ON Mode
OFF Mode
ON Mode
OFF Mode
–
–
Power on voltage
Supply current
VPON
IPON
0.8
0
VCC
0.4
10
–
V
–
5
µA
µA
dB
–
–
1
Insertion power gain
f = 1214MHz
Noise figure2)
f = 1214 MHz, ZS = 50 Ω
Input return loss3)
f = 1214 MHz
Output return loss3)
f = 1214 MHz
Reverse isolation3)
f = 1214 MHz
Power on time4)7)
|S21|2
NF
16.9
17.9
18.9
–
0.60
13
1.10
dB
dB
dB
dB
–
–
–
–
RLIN
RLOUT
1/|S12|2
tS
10
12
19
–
–
–
20
22
–
3
5
–
µs
OFF to ON Mode
–
Inbandinput1dB-compression IP1dB
point, f = 1214 MHz3)
-12
-8
dBm
Inband input 3rd-order
IIP3
IIP3OOB
k
-4
1
2
–
–
–
–
dBm
dBm
–
intercept point3)5)
f1 = 1214 MHz, f2 = f1 +/- 1 MHz
Out of band input 3rd-order
-3
–
intercept point6)7)
f1 = 1850 MHz, f2 = 2500 MHz
Stability7)
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in Chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) LNA Gain changed to 90% of final gain value (in dB)
5) Input power = -30 dBm for each tone
6) Input power = -25 dBm for each tone
7) Guaranteed by device design; not tested in production
Data Sheet
8
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Application Information
4
Application Information
Application Board Configuration
N1 BGA855N6
AO, 3
GND, 4
RFout
L1
C1 (optional)
VCC, 2
VCC
RFin
AI, 5
C2
(optional)
PON, 6
GND, 1
PON
BGA855N6_Schematic.vsd
Figure 2
Application Schematic BGA855N6
Bill of Materials
Table 6
Name
Value
Package
0402
Manufacturer
Various
Function
C1 (optional) 1nF
Input matching
RF bypass 1)
C2 (optional) ≥ 1nF
0402
Various
L1
9.4nH
0402
Murata LQW15 type Input matching
Infineon SiGe LNA
N1
BGA855N6
TSNP-6-10
1) RF bypass recommended to mitigate power supply noise
Data Sheet
9
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Package Information
5
Package Information
Figure 3
TSNP-6-10 Package Outline (top, side and bottom views)
Figure 4
Footprint Recommendation TSNP-6-10
Data Sheet
10
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Package Information
TSNP-6-10_MK.vsd
Figure 5
Marking Layout TSNP-6-10 (top view)
Figure 6
Date Code Marking TSNP-6-10
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Pin1
marking
Figure 7
Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000)
Data Sheet
11
Revision 2.1
2023-01-11
BGA855N6
Low Noise Amplifier for Lower L-Band GNSS Applications
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 2.1, 2023-01-11
6-8
Update Power On Voltage for On Mode
Data Sheet
12
Revision 2.1
2023-01-11
Please read the Important Notice and Warnings at the end of this document
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IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2023-01-11
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
WARNINGS
© 2023 Infineon Technologies AG.
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Do you have a question about any
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Email: erratum@infineon.com
Except as otherwise explicitly approved by Infineon
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